Photo receptor with reduced noise
First Claim
1. A low voltage small area high signal to noise ratio comprising:
- a layer of photoreceptive semiconductor material having a surface;
a conductive electrode extending from the surface, into the layer of semiconductor material for forming a potential well in the layer of semiconductor material upon the application of a voltage to the electrode;
a layer of insulating material between the conductive electrode and the layer of semiconductor material; and
a phototransmissive electrode on the layer of insulating material, overlaying the layer of photoreceptive semiconductor material and electrically connected to the conductive electrode.
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Accused Products
Abstract
An improved low voltage, small surface area, high signal-to-noise ratio photo gate includes a layer of photoreceptive semiconductor material having an impurity concentration selected to enhance the formation of hole electron pairs in response to photons impinging on a surface of the substrate, an electrode extending from the surface of the substrate into the substrate a substantial distance; an insulating layer disposed between the electrode and the substrate for electrically insulating the electrode from the substrate; so that upon the application of an electrical potential to the electrode, a potential well is formed in the substrate surrounding the electrode for accumulating charge generated when photons impinge on the surface of the substrate surrounding the electrode.
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Citations
3 Claims
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1. A low voltage small area high signal to noise ratio comprising:
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a layer of photoreceptive semiconductor material having a surface;
a conductive electrode extending from the surface, into the layer of semiconductor material for forming a potential well in the layer of semiconductor material upon the application of a voltage to the electrode;
a layer of insulating material between the conductive electrode and the layer of semiconductor material; and
a phototransmissive electrode on the layer of insulating material, overlaying the layer of photoreceptive semiconductor material and electrically connected to the conductive electrode. - View Dependent Claims (2, 3)
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Specification