Polycrystalline diamond compact cutter with improved cutting by preventing chip build up

• US 6,196,910 B1
• Filed: 08/10/1998
• Issued: 03/06/2001
• Est. Priority Date: 08/10/1998
• Status: Expired due to Term

• Current Assignee: Diamond Innovations Incorporated (Sandvik AB)
• Original Assignee: General Electric Company
• Inventors: Johnson, David M., Lucek, John W.
• Primary Examiner(s): Scherbel, David A.
• Assistant Examiner(s): MCDONALD, SHANTESE L
• Application Number:
  US09/131,460
• Time in Patent Office: 939 Days
• Field of Search: 451/540, 451/539, 451/542
• US Class Current: 451/540
• CPC Class Codes: B23B 27/143 characterised by having chip-breakers

Abstract

The present invention discloses a new surface geometry of a polycrystalline diamond (PCD) cutter whereby large chips are prevented from forming in front of the cutter. The surface geometry includes recess(es) and/or raised region(s) that can act as chip breakers and also increase turbulence in the flow across the face of the cutter and thus increase the Heat transfer coefficient and reduce drag. PCD surface'"'"'s geometric configuration is formed in the high temperature/high heat (HT/HP) process and is therefore integral with the cutter. This invention thus provides a polycrystalline cutter with improved cutting capability by preventing chip build up and enhanced heat transfer resulting in a cooler cutting edge temperature.

Claims

1. An abrasive compact comprising

(a) layer having a first and second side, a cemented carbide substrate bonded to the second side and a cutting edge, and

(b) the first side has a cutting surface including a substantially planar region and at least one non-planar region comprised of at least one raised hemispherical region, said non-planar region acts a chip breaker and increases turbulence across the cutting surface.

2. An abrasive compact according to claim 1 wherein said abrasive layer is selected from the group consisting of a polycrystalline diamond and cubic boron nitride.

3. An abrasive compact according to claim 2 wherein said cemented carbide substrate is selected from the group consisting of tungsten carbide, tantalum carbide and titanium carbide.

4. An abrasive compact according to claim 1 wherein the abrasive layer has a single raised hemispherical region.

5. An abrasive compact according to claim 1 wherein the least one raised hemispherical region has a maximum thickness of from about 0.1 mm to about 3 mm.

6. An abrasive compact according to claim 5 wherein the at least one raised hemispherical region has a maximum thickness of from about 0.5 mm to about 1.0 mm.

7. An abrasive compact according to claim 1 wherein the diameter of the at least one raised hemispherical region is from about 0.2 mm to about 5 mm.

8. An abrasive compact according to claim 7 wherein the diameter of the at least one raised hemispherical region is from about 1 mm to about 3 mm.

9. An abrasive compact according to claim 1 wherein said non-planar region comprises 4 raised hemispherical regions.

10. An abrasive compact comprising

(a) an abrasive layer having a first and second side, a cemented carbide substrate bonded to the second side and a cutting edge, and

(b) the first side has a cutting surface including a substantially planar region acts as a chip breaker and increases turbulence across the cutting surface.

11. An abrasive compact comprising

(a) and abrasive layer having a first and second side, a cemented carbide substrate bonded to the second side and a cutting edge, and

(b) the first side has a cutting surface including a substantially planar region, and at least one non-planar region which consists of one recess and one raised hemispherical region, said at least on non-planar region acts as a chip breaker and increases turbulence across the cutting surface.