Plasma processing system

• US 6,197,116 B1
• Filed: 08/29/1997
• Issued: 03/06/2001
• Est. Priority Date: 08/29/1996
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Kosugi, Makoto
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/921,251
• Time in Patent Office: 1,285 Days
• Field of Search: 118/712, 118/713, 118/714, 156/345
• US Class Current: 118/712
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

A plasma processing system including a signal sampling unit for measuring electric signals reflecting a plasma condition; a model expression memory for storing a model expression for relating values of the electric signals with plasma processing characteristics; a computing unit for substituting the values of the electric signals measured by the signal sampling unit into the model expression read from the model expression memory to computer predicted values of the plasma processing characteristics; and a diagnosing unit for diagnosing a condition of a plasma, based on the predicted values of the plasma processing characteristics. The plasma processing system of this structure permits a condition of a plasma to be estimated by substituting realtime measured electric signals into a model expression, whereby when a change of plasma processing characteristics occurs, the operator can immediately know it. Accordingly, occurrence of a large number of defective wafers can be precluded.

Claims

1. A plasma processing system comprising:

a measuring unit for measuring an electric signal reflecting a plasma condition;

a model expression memory for storing a model expression for relating a value of the electric signal with a plasma processing characteristic;

an end point detector, based on said electric signal;

a computing unit for computing a predicted value of the plasma processing characteristic by means of substituting the value of the electric signal measured by the measuring unit into the model expression read from the model expression memory and for computing an actually measured value of the plasma processing characteristic based on an endpoint information detected by said endpoint detector; and

a diagnosing unit for diagnosing a condition of a plasma based on a difference between the predicted value and the actually measured value of the plasma processing characteristic.

2. A plasma processing system according to claim 1, wherein the diagnosing unit decides whether or not plasma processing is continued based on a diagnosis result of the condition of the plasma.

3. A plasma processing system according to claim 1, further comprising.

a controller for controlling the condition of the plasma based on the predicted value so that the plasma processing characteristic is substantially constant.

4. A plasma processing system according to claim 1, wherein

the measuring unit measures as the electric signal, at least one of a voltage, a current, a phase, an impedance or a self-bias voltage between an impedance matching unit, and an electrode for applying a radio frequency electric power for generating a plasma.

5. A plasma processing system according to claim 1, wherein

the plasma processing characteristic is one of an etching rate, etching uniformity, a selectivity, or a processed profile.

6. A plasma processing system according to claim 1, wherein

the plasma processing characteristic is a film deposition rate or deposition uniformity.

7. A plasma processing system according to claim 1,

wherein the model expression is related to a number of substrates to be processed after cleaning of the system.

8. A plasma processing system comprising:

a first measuring unit for measuring an electric signal reflecting a plasma condition;

a model expression memory for storing a model expression for relating a value of the electric signal with a plasma processing characteristic;

a computing unit for computing a predicted value of the plasma processing characteristic by substituting the value of the electric signal measured by the measuring unit into the model expression read from the model expression memory and for computing an actually measured value of the plasma processing characteristic based on said electric signal; and

a diagnosing unit for diagnosing a condition of a plasma based on a difference between the predicted value and the actually measured value of the plasma processing characteristic.