Method of fabricating semiconductor device

• US 6,197,704 B1
• Filed: 04/07/1999
• Issued: 03/06/2001
• Est. Priority Date: 04/08/1998
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Endo, Kazuhiko, Shinoda, Keisuke
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): LEE, HSIEN MING
• Application Number:
  US09/286,986
• Time in Patent Office: 699 Days
• Field of Search: 438/781, 438/783, 438/784, 438/789, 438/788, 438/763, 438/780
• US Class Current: 438/781
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3146 Carbon layers, e.g. diamond-like layers
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lower wiring layer, the insulating film being composed of carbon family material, (b) annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited, and (c) forming an upper wiring layer on the insulating film. The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.

Claims

1. A method of fabricating a semiconductor device including an insulating film composed of carbon family material, said method comprising the steps of:

(a) depositing an insulating film composed of carbon family material; and

(b) annealing said insulating film in a hydrogen atmosphere at atmospheric pressure.

2. The method as set forth in claim 1, wherein said insulating film is deposited by any one of plasma-enhanced chemical vapor deposition, thermal chemical vapor deposition, and spin coating.

3. The method as set forth in claim 1, wherein said insulating film is composed of hydrogen-containing amorphous carbon.

4. The method as set forth in claim 3, further comprising the step of locally reducing a hydrogen concentration in the vicinity of interfaces between said hydrogen-containing insulating film and other films.

5. The method as set forth in claim 1, wherein said insulating film is composed of fluorine-containing amorphous carbon.

6. The method as set forth in claim 5, further comprising the step of locally reducing a fluorine concentration in the vicinity of interfaces between said fluorine-containing insulating film and other films.

7. The method as set forth in claim 1, wherein said insulating film is composed of poly-p-xylylene.

8. The method as set forth in claim 1, wherein said insulating film is composed of polyimide.

9. The method as set forth in claim 1, wherein said hydrogen atmosphere contains inert gas.

10. The method as set forth in claim 1, wherein said step (b) is carried out at a first temperature equal to or greater than a temperature at which said insulating film has been deposited.

11. The method as set forth in claim 10, wherein said first temperature is equal to or greater than 200 degrees centigrade, and equal to or lower than a second temperature at which said insulating film is decomposed.

12. The method as set forth in claim 10, wherein said first temperature is equal to or greater than 200 degrees centigrade, and equal to or lower than 450 degrees centigrade.

13. A method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, said method comprising the steps of:

(a) depositing an insulating film on a lower wiring layer, said insulating film being composed of carbon family material;

(b) annealing said insulating film in a hydrogen atmosphere at atmospheric pressure; and

(c) forming an upper wiring layer on said insulating film.

14. The method as set forth in claim 13, wherein said insulating film is deposited by any one of plasma-enhanced chemical vapor deposition, thermal chemical vapor deposition, and spin coating.

15. The method as set forth in claim 13, wherein said insulating film is composed of hydrogen-containing amorphous carbon.

16. The method as set forth in claim 15, further comprising the step of locally reducing a hydrogen concentration in the vicinity of interfaces between said hydrogen-containing insulating film and other films.

17. The method as set forth in claim 13, wherein said insulating film is composed of fluorine-containing amorphous carbon.

18. The method as set forth in claim 17, further comprising the step of locally reducing a fluorine concentration in the vicinity of interfaces between said fluorine-containing insulating film and other films.

19. The method as set forth in claim 13, wherein said insulating film is composed of poly-p-xylylene.

20. The method as set forth in claim 13, wherein said insulating film is composed of polyimide.

21. The method as set forth in claim 13, wherein said hydrogen atmosphere contains inert gas.

22. The method as set forth in claim 13, wherein said step (b) is carried out at a first temperature equal to or greater than a temperature at which said insulating film has been deposited.

23. The method as set forth in claim 22, wherein said first temperature is equal to or greater than 200 degrees centigrade, and equal to or lower than a second temperature at which said insulating film is decomposed.

24. The method as set forth in claim 22, wherein said first temperature is equal to or greater than 200 degrees centigrade, and equal to or lower than 450 degrees centigrade.