×

Method of silicon oxide and silicon glass films deposition

  • US 6,197,705 B1
  • Filed: 03/18/1999
  • Issued: 03/06/2001
  • Est. Priority Date: 03/18/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming a silicon oxide film over a heated substrate by a Plasma Activated chemical vapor deposition (PACVD) using TEOS and an ozone source as reactants in the constant presence of a plasma;

  • the method comprising the steps of;

    a) placing a substrate in a parallel plate type reactor chamber;

    said substrate has an upper surface with a plurality of steps;

    b) in a deposition step, inducing a reaction in a gaseous mixture composition to produce deposition of a silicon oxide film over said substrate, said silicon oxide film is deposited by subjecting said substrate to a plasma during all of said deposition step and wherein said composition comprises tetraethoxysilane (TEOS) a source of ozone, and fluorotriethoxysilane; and

    wherein after said deposition of said silicon oxide film, a corner in said silicon oxide film between said steps is avoided.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×