Capacitors with silicized polysilicon shielding in digital CMOS process

• US 6,198,153 B1
• Filed: 04/21/1997
• Issued: 03/06/2001
• Est. Priority Date: 04/21/1997
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Liu, Edward W., Wong, See-Hoi Caesar
• Primary Examiner(s): Tran, Minh Loan
• Assistant Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US08/840,948
• Time in Patent Office: 1,415 Days
• Field of Search: 257/307-308, 257/532, 257/295-310, 257/409, 257/250, 257/313, 438/250, 361/311-313, 361/303, 361/305
• US Class Current: 257/532
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

The present invention provides for a shielded capacitor in a digital CMOS fabrication process. The shield capacitor comprises a first surface (also known as a top plate) and a second surface (the bottom plate). The bottom plate has two portions which are connected, and the two portions of the bottom plate are positioned to sandwich the top plate in between the portions. A polysilicon layer is fabricated between the plates and the substrate of the semiconductor to isolate the plates from the substrate. To build the shielded capacitor, the polysilicon layer is fabricated first, then the plates are built on top of the polysilicon layer. The polysilicon layer is silicized and is often connected to the ground.

Claims

1. A capacitor formed on a semiconductor, said capacitor comprising:

a semiconductor substrate;

a first plate of the capacitor fabricated above said substrate;

a second plate of the capacitor facing said first plate; and

a shielding layer disposed between said first plate and said substrate, said shielding layer overlapping substantially an entire area covered by said capacitor.

2. A capacitor according to claim 1 wherein said first plate and said second plate are metal.

3. A capacitor according to claim 1 wherein said first plate further comprises a first portion positioned above said second plate and a second portion, connected to said first portion, positioned below said second plate.

4. A capacitor according to claim 1 wherein said shielding layer is polysilicon.

5. A capacitor according to claim 4 wherein said shielding layer is silicized polysilicon.

6. A Complementary Metal Oxide Semiconductor (CMOS) semiconductor chip comprising:

(a) a substrate;

(b) a capacitor fabricated on said substrate, said capacitor comprising;

(1) a first metal layer forming a bottom plate of said capacitor;

(2) a second metal layer forming a top plate of said capacitor;

(3) a third metal layer, connected to said first metal layer; and

(c) a polysilicon layer disposed between said capacitor and said substrate as a shield against noise, said polysilicon layer overlapping substantially an entire area covered by said capacitor.

7. A CMOS chip according to claim 6 wherein said second metal layer is in between said first metal layer and said third metal layer.

8. A CMOS chip according to claim 6 wherein said top plate and said bottom plates are metal.

9. A CMOS chip according to claim 6 wherein said polysilicon layer is silicized polysilicon.