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Capacitors with silicized polysilicon shielding in digital CMOS process

  • US 6,198,153 B1
  • Filed: 04/21/1997
  • Issued: 03/06/2001
  • Est. Priority Date: 04/21/1997
  • Status: Expired due to Term
First Claim
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1. A capacitor formed on a semiconductor, said capacitor comprising:

  • a semiconductor substrate;

    a first plate of the capacitor fabricated above said substrate;

    a second plate of the capacitor facing said first plate; and

    a shielding layer disposed between said first plate and said substrate, said shielding layer overlapping substantially an entire area covered by said capacitor.

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