Capacitors with silicized polysilicon shielding in digital CMOS process
First Claim
1. A capacitor formed on a semiconductor, said capacitor comprising:
- a semiconductor substrate;
a first plate of the capacitor fabricated above said substrate;
a second plate of the capacitor facing said first plate; and
a shielding layer disposed between said first plate and said substrate, said shielding layer overlapping substantially an entire area covered by said capacitor.
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Accused Products
Abstract
The present invention provides for a shielded capacitor in a digital CMOS fabrication process. The shield capacitor comprises a first surface (also known as a top plate) and a second surface (the bottom plate). The bottom plate has two portions which are connected, and the two portions of the bottom plate are positioned to sandwich the top plate in between the portions. A polysilicon layer is fabricated between the plates and the substrate of the semiconductor to isolate the plates from the substrate. To build the shielded capacitor, the polysilicon layer is fabricated first, then the plates are built on top of the polysilicon layer. The polysilicon layer is silicized and is often connected to the ground.
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Citations
9 Claims
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1. A capacitor formed on a semiconductor, said capacitor comprising:
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a semiconductor substrate;
a first plate of the capacitor fabricated above said substrate;
a second plate of the capacitor facing said first plate; and
a shielding layer disposed between said first plate and said substrate, said shielding layer overlapping substantially an entire area covered by said capacitor. - View Dependent Claims (2, 3, 4, 5)
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6. A Complementary Metal Oxide Semiconductor (CMOS) semiconductor chip comprising:
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(a) a substrate;
(b) a capacitor fabricated on said substrate, said capacitor comprising;
(1) a first metal layer forming a bottom plate of said capacitor;
(2) a second metal layer forming a top plate of said capacitor;
(3) a third metal layer, connected to said first metal layer; and
(c) a polysilicon layer disposed between said capacitor and said substrate as a shield against noise, said polysilicon layer overlapping substantially an entire area covered by said capacitor. - View Dependent Claims (7, 8, 9)
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Specification