Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same
First Claim
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1. An integrated circuit, comprising:
- a semiconductor wafer having first and second surfaces;
a functional circuit formed on the first surface of the semiconductor wafer;
at least one high aspect ratio via that extends through the semiconductor wafer;
wherein the at least one high aspect ratio via comprises a high aspect ratio hole that is formed by an anodic etch and that is filled by initially filling the hole with polysilicon and then substituting aluminum for polysilicon in the hole; and
a metallization layer formed outwardly from the first surface of the semiconductor wafer that selectively couples at least one node of the functional circuit with the at least one high aspect ratio via.
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Abstract
An integrated circuit and method for forming the same. The integrated circuit includes a semiconductor wafer with first and second surfaces. A functional circuit is formed on the first surface of the semiconductor wafer. Further, a metallization layer is formed outwardly from the first surface of the semiconductor wafer. The integrated circuit also includes at least one high aspect ratio via that extends through the layer of semiconductor material. This via provides a connection between a lead and the functional circuit.
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Citations
26 Claims
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1. An integrated circuit, comprising:
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a semiconductor wafer having first and second surfaces;
a functional circuit formed on the first surface of the semiconductor wafer;
at least one high aspect ratio via that extends through the semiconductor wafer;
wherein the at least one high aspect ratio via comprises a high aspect ratio hole that is formed by an anodic etch and that is filled by initially filling the hole with polysilicon and then substituting aluminum for polysilicon in the hole; and
a metallization layer formed outwardly from the first surface of the semiconductor wafer that selectively couples at least one node of the functional circuit with the at least one high aspect ratio via. - View Dependent Claims (2, 3, 4, 5, 7)
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6. An integrated circuit, comprising:
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a semiconductor wafer having first and second surfaces;
a functional circuit formed on the first surface of the semiconductor wafer;
at least one high aspect ratio via that extends through the semiconductor wafer;
a metallization layer formed outwardly from the first surface of the semiconductor wafer that selectively couples at least one node of the functional circuit with the at least one high aspect ratio via; and
wherein the at least one high aspect ratio via comprises a via with an aspect ratio of at least 100. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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8. An integrated circuit, comprising:
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a semiconductor wafer with a functional circuit formed in one surface thereof, and a number of high aspect ratio vias formed through the thickness of the wafer with a first end of each high aspect ratio via coupled to a metallization layer on the first surface of the wafer and a second end of the high aspect ratio via coupled to a bond pad on a second, opposite side of the semiconductor wafer;
wherein the at least one high aspect ratio via comprises a high aspect ratio hole that is formed by an anodic etch and that is filled by filling the hole with polysilicon and then substituting aluminum for polysilicon in the hole; and
a chip carrier having leads disposed on a surface of the chip carrier that are coupled to selected of the bond pads on the second surface of the semiconductor wafer when the semiconductor wafer is disposed on the chip carrier. - View Dependent Claims (9, 10, 11)
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12. An integrated circuit, comprising:
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a semiconductor wafer with a functional circuit formed in one surface thereof, and a number of high aspect ratio vias formed through the thickness of the wafer with a first end of each high aspect ratio via coupled to a metallization layer on the first surface of the wafer and a second end of the high aspect ratio via coupled to a bond pad on a second, opposite side of the semiconductor wafer;
a chip carrier having leads disposed on a surface of the chip carrier that are coupled to selected of the bond pads on the second surface of the semiconductor wafer when the semiconductor wafer is disposed on the chip carrier; and
wherein the at least one high aspect ratio via comprises a via with an aspect ratio of at least 100. - View Dependent Claims (19, 20, 21, 22, 26)
applying a layer of polysilicon to the surface of the wafer by chemical vapor deposition;
initially applying a coating of aluminum to the wafer by sputtering;
removing aluminum from the surface of the wafer by chemical mechanical polishing; and
annealing the wafer to substitute aluminum for the polysilicon in the holes.
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23. An integrated circuit, comprising:
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a semiconductor wafer with a functional circuit formed in one surface thereof, and a number of high aspect ratio vias formed through the thickness of the wafer with a first end of each high aspect ratio via coupled to a metallization layer on the first surface of the wafer and a second end of the high aspect ratio via coupled to a bond pad on a second, opposite side of the semiconductor wafer;
wherein the at least one high aspect ratio via comprises a high aspect ratio hole that is formed by an anodic etch and that is filled by initially filling the hole with polysilicon and then substituting aluminum for polysilicon in the hole by performing a sputtering of aluminum onto the surface of the wafer then annealing the wafer to substitute the aluminum for the polysilicon in the holes; and
a chip carrier having leads disposed on a surface of the chip carrier that are coupled to selected of the bond pads on the second surface of the semiconductor wafer when the semiconductor wafer is disposed on the chip carrier. - View Dependent Claims (24, 25)
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Specification