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Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same

  • US 6,198,168 B1
  • Filed: 01/20/1998
  • Issued: 03/06/2001
  • Est. Priority Date: 01/20/1998
  • Status: Expired due to Term
First Claim
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1. An integrated circuit, comprising:

  • a semiconductor wafer having first and second surfaces;

    a functional circuit formed on the first surface of the semiconductor wafer;

    at least one high aspect ratio via that extends through the semiconductor wafer;

    wherein the at least one high aspect ratio via comprises a high aspect ratio hole that is formed by an anodic etch and that is filled by initially filling the hole with polysilicon and then substituting aluminum for polysilicon in the hole; and

    a metallization layer formed outwardly from the first surface of the semiconductor wafer that selectively couples at least one node of the functional circuit with the at least one high aspect ratio via.

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