Driving circuits for switch mode RF power amplifiers

• US 6,198,347 B1
• Filed: 07/29/1999
• Issued: 03/06/2001
• Est. Priority Date: 07/29/1999
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Tropian, Inc. (Panasonic Holdings Corporation)
• Inventors: Sander, Wendell, McCune, Jr., Earl W., Meck, Ronald A.
• Primary Examiner(s): Mottola, Steven J.
• Application Number:
  US09/362,880
• Time in Patent Office: 586 Days
• Field of Search: 330/207.A, 330/251, 330/302, 330/311, 330/263, 330/267, 330/300
• US Class Current: 330/251
• CPC Class Codes: H03C 5/00 Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal H03C7/00 takes precedence
• CPC Class Codes: H03F 1/0227 using supply converters
• CPC Class Codes: H03F 1/0244 Stepped control
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 2200/504 the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
• CPC Class Codes: H03F 3/1935 with junction-FET devices
• CPC Class Codes: H03F 3/3076 with symmetrical driving of the end stage
• CPC Class Codes: H03G 3/004 Control by varying the supply voltage

Abstract

The present invention, generally speaking, provides an RF amplifier circuit architecture that enables high efficiency to be achieved while avoiding complicated matching networks and load networks. The active device may be of the bipolar transistor type or the FET (field effect transistor) type. A simple driving circuit is provided for each type of active device. In accordance with one embodiment of the invention, a single-ended switch mode RF amplifier includes an RF input signal; an active device having a control terminal; and a non-resonant driving circuit for receiving the RF input signal and controlling a signal applied to the control terminal so as to operate the active device in switch mode.

Claims

1. A single-ended switch mode RF amplifier, comprising:

an RF input signal;

a bipolar switching transistor having a collector, a base and an emitter; and

a driving circuit for receiving the RF input signal and controlling a signal applied to the control terminal so as to operate the bipolar switching transistor in switch mode, comprising;

a bipolar driver transistor having a collector, a base and an emitter, the emitter of the bipolar driver transistor being connected to the base of the bipolar switching transistor; and

a passive impedance element coupled from the emitter of the bipolar driver transistor to a fixed potential.

2. The apparatus of claim 1, wherein the RF input signal is coupled to the base of the bipolar driver transistor.

3. The apparatus of claim 2, wherein the RF input signal is coupled to the base of the bipolar driver transistor through a DC isolation capacitor.

9. The apparatus of claim 1, wherein an operating voltage is applied to the bipolar switching transistor through a reactive element, further comprising means for varying the operating voltage to control RF output power.

4. A single-ended switch mode RF amplifier, comprising:

an RF input signal;

a FET switching transistor having a drain, a source and a gate; and

a driving circuit for receiving the RF input signal and controlling a signal applied to the control terminal so as to operate the active device in switch mode, comprising;

a pair of bipolar driver transistors each having a collector, a base and an emitter and connected in push-pull arrangement, the emitters of the bipolar driving transistors being connected to gate of the FET switching transistor; and

a further bipolar transistor having a collector, a base and an emitter, the further bipolar transistor being configured in common base configuration, the collector of the further bipolar transistor being coupled to the bases of the pair of bipolar transistors.

5. The apparatus of claim 4, wherein an operating voltage is applied to the FET switching transistor through a reactive element, further comprising means for varying the operating voltage to control RF output power.

6. The apparatus of claim 4, wherein the RF input signal is coupled to the emitter of the further bipolar transistor.

7. The apparatus of claim 6, wherein the RF input signal is coupled to the emitter of the further bipolar transistor through a DC isolation capacitor.

8. The apparatus of claim 6, wherein the collector of the further bipolar transistor is coupled through an inductor to an operating potential.