Power sensing apparatus for power amplifiers

• US 6,198,351 B1
• Filed: 05/10/1999
• Issued: 03/06/2001
• Est. Priority Date: 05/10/1999
• Status: Expired due to Term

• Current Assignee: MACOM Technology Solutions Holdings, Inc.
• Original Assignee: Tyco Electronics Logistics AG (TE Connectivity Limited)
• Inventors: Winslow, Thomas Aaron
• Primary Examiner(s): Shingleton, Michael B.
• Application Number:
  US09/307,913
• Time in Patent Office: 666 Days
• Field of Search: 327/51, 327/81, 330/298, 330/207.P, 257/382, 257/401
• US Class Current: 330/298
• CPC Class Codes: H03F 1/523 for amplifiers using field-effect devices H03F1/526 takes precedence

Abstract

In a power amplifier comprising a plurality of cascaded field effect transistors (FETs), a power sensing circuit for sensing the output power of the power amplifier comprising a FET device operative in a first linear mode and second saturated mode of operation, the FET having source, gate and drain electrodes; and a low value resistor connected between the source electrode and a reference potential for generating a voltage drop between the source and the reference potential such that when the FET operates in the saturation mode, the voltage drop is indicative of the output power of the power amplifier.

Claims

1. A power sensing circuit for sensing the output power of a power amplifier comprising:

a FET device operative in a first linear mode and second saturated mode of operation, said FET having source, gate and drain electrodes; and

resistive means connected between said source electrode and a reference potential for generating a voltage drop between said source and said reference potential such that when said FET operates in said saturation mode, said voltage drop is indicative of the output power of said power amplifier.

2. The circuit according to claim 1, wherein said reference potential is zero volts.

3. The circuit according to claim 1, wherein said power amplifier and said power sensing circuit are formed on a single MMIC chip.

4. The circuit according to claim 1, wherein in said saturation mode the voltage drop between said source and said reference potential is proportional to the level of saturation of said FET.

5. The circuit according to claim 1, wherein said voltage drop increases as said power sensing circuit FET is driven into saturation.

6. The circuit according to claim 1, wherein said resistance means comprises a low value resistor.

7. The circuit according to claim 1, wherein said power amplifier is a staged amplifier comprising a plurality of cascaded FETs, and wherein said power sensor FET gate electrode is coupled to a gate electrode of one of said plurality of FETs.

8. The circuit according to claim 7, wherein said drain electrode is coupled to the drain electrode of said one of said plurality of FETs.

9. A power sensing circuit for sensing the output power of a semiconductor device which is driven via an input signal from a linear to a power saturated condition, wherein a plurality of drain finger electrodes, source finger electrodes, and gate finger electrodes are disposed on a semiconductor substrate to form said semiconductor device, and wherein said source finger electrodes are coupled to a reference potential, said power sensing circuit comprising a field effect transistor (FET) having source, gate and drain finger electrodes disposed on said semiconductor substrate, wherein said source electrode corresponding to said power sensing circuit FET is connected to said reference potential via a bond pad and a resistor, such that when said semiconductor device enters a saturated condition, said power sensing circuit FET enters saturation and a voltage drop is generated across said resistor indicative of the level of saturation of said power sensing circuit FET and which corresponds to the output power of said amplifier.

10. The circuit according to claim 9, wherein a bond pad on said semiconductor device is coupled to said resistor and operates to provide an output connection for measuring the voltage drop across said resistor.

11. The circuit according to claim 9, wherein said semiconductor device comprises gallium arsenide based FETs.

12. The circuit according to claim 9, wherein said resistor is a small valued resistor or approximately 30 ohms.

13. The circuit according to claim 9, wherein said saturation condition comprises a compression state of said power sensing circuit FET.

14. The circuit according to claim 9, wherein the voltage drop generated across said resistor increases as said semiconductor device and said power sensing circuit FET is driven into saturation.

15. A method for providing a power sensing apparatus for a power amplifier operable in a compression mode comprising the steps of:

forming an active region at a surface of a semiconductor substrate;

forming a plurality of drain finger electrodes, source finger electrodes, and gate finger electrodes within said active region;

forming a source bus for connecting each of said source finger electrodes and coupling said source fingers to a reference potential; and

removing one of said FET source finger connections to said source bus and inserting a resistor between said one source finger electrode and said reference potential, wherein when said power amplifier enters compression the FET having said source finger coupled to said resistor also operates in compression mode, such that the voltage generated across said resistor represents a measure of the output power of said amplifier.

16. The method according to claim 15, wherein said voltage generated across said resistor as said FET enters compression is indicative of the level of compression of said FET.

17. The method according to claim 15, wherein driving said FET further into compression operates to increase the voltage drop across said resistor.

18. The method according to claim 15, wherein the voltage drop across resistor is a DC voltage drop under fixed loading conditions.

19. The method according to claim 15, wherein said semiconductor device is gallium arsenide based.

20. The method according to claim 15, wherein said reference potential is ground potential.