Synchronous rectifier flyback circuit for zero voltage switching

• US 6,198,638 B1
• Filed: 01/24/2000
• Issued: 03/06/2001
• Est. Priority Date: 01/25/1999
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Sang Yun
• Primary Examiner(s): NGUYEN, MATTHEW VAN
• Application Number:
  US09/489,803
• Time in Patent Office: 407 Days
• Field of Search: 363/16, 363/20, 363/21, 363/95, 363/97, 363/125, 363/127, 363/131
• US Class Current: 363/21.14
• CPC Class Codes: H02M 1/38 Means for preventing simultaneous conduction of switches
• CPC Class Codes: H02M 3/33592 having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The present invention relates a flyback circuit for zero voltage switching {ZVS} in continuous mode {CCM} and discontinuous mode {DCM}, which circuit minimized loss generated when electrifying parasitic diode of MOS transistor {MOSFET} that is secondary side switch of synchronous rectifier and which also enabled ZVS in whole range of discontinuous mode {DCM}. Particularly it contains a synchronous rectifier driver that delays the gate drive signal that is outputted from pulse width modulation part after which the driver compares it with reference voltage that is outputted from pulse width modulation part and then the driver amplifies result value so as to supply it as the drive signal for synchronous rectifier part, a level change device that drives the synchronous rectifier gate, changing the level of gate drive signal that is outputted from gate drive device, and an insulating transformer that transmits the drive signal that is outputted from synchronous rectifier driver, to the level change device side. Wherewith it inverts the output signal of the pulse width modulation part in driving the synchronous rectifier gate, resulting in minimization of loss occurred at time of electrification of parasitic diode of MOS transistor {MOSFET} that is secondary side switch so that it makes effect to enhance efficiency letting it perform zero voltage switching {ZVS} under fixed frequency condition in discontinuous mode {DCM}.

Claims

1. In a flyback circuit including a pulse width modulation part generating the pulse width modulation signal;

a switch performing the switching operation according to the pulse width modulation signal that is outputted from said pulse width modulation part;

a transformer inducing primary voltage to secondary side according to switching action of said switch; and

a synchronous rectifier rectifying secondary side output voltage of said transformer,

said flyback circuit using said synchronous rectifier featuring that it comprises;

a synchronous rectifier driver that delays the gate drive signal that is outputted from said pulse width modulation part after which the driver compares it with reference voltage that is outputted from said pulse width modulation part and then the driver amplifies result value so as to supply it as the drive signal for said synchronous rectifier part;

a level change device that drives the gate of said synchronous rectifier, changing the level of gate drive signal that is outputted from said gate drive device; and

an insulating transformer that transmits the drive signal that is outputted from said synchronous rectifier driver, to said level change device side.

2. The flyback circuit in claim 1, wherein said synchronous rectifier driver comprises a signal delay device that retards the gate drive signal that is outputted from said pulse width modulation part;

and a conversion and compensation device which compares the gate drive signal that is outputted from said signal delay device with the reference voltage that is outputted from said pulse width modulation part and then amplifies the result value so as to generate the compensated gate drive signal at turnoff time of said synchronous rectification device.

3. The flyback circuit in claim 2, wherein an RC filter which is composed of a resistance and a condenser that retards said switch gate drive signal by amount of time constant, is used as said signal retardation device.

4. The flyback circuit in claim 2, wherein said conversion and compensation device comprises a comparator to compare the reference voltage that is outputted from said pulse width modulation part with the signal that is outputted from said signal retardation device;

and a buffer amplifier to amplify output signal of said comparator so as to generate synchronous rectifier gate drive signal.

5. The flyback circuit in claim 4, said buffer amplifier comprises a first transistor that gets input of a definite positive voltage into a collector terminal through a first resistance and gets input of said positive voltage into a base terminal through a second resistance, operating on/off according to the output signal of said comparator which signal is put to said base terminal;

and a second transistor that gets input of voltage that is put into an emitter terminal of said first transistor into the emitter terminal and gets input of the output signal of said comparator into the base terminal, operating reactively against said first transistor.

6. The flyback circuit in claim 1, wherein said level change device comprises a third resistance connected between a gate terminal of said synchronous rectifier and a ground terminal;

a first diode of which its cathode terminal is connected to said gate terminal of said synchronous rectifier device while its anode terminal is connected to said ground terminal;

a fourth resistance between a secondary voltage output terminal of said insulation transformer and said gate terminal of said synchronous rectifier device; and

a second condenser connected between a secondary side ground terminal of said insulation transformer and said anode terminal of said first diode.