Nonvolatile semiconductor memory device and method of manufacturing the same
First Claim
1. A nonvolatile memory device provided with an erasure prohibiting circuit for prohibiting erasure of the content of data in said nonvolatile memory device, wherein said erasure prohibiting circuit permanently prohibits erasure of the data when an instruction to prohibit erasure is directed from the outside of said nonvolatile memory device.
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Accused Products
Abstract
A nonvolatile memory device is provided capable of shipping after setting it as a flash memory or as a one-time memory, and which cannot be altered to a flash memory once it has been used as a one-time memory. The nonvolatile memory device of the present invention has a circuit structure such that when a nonvolatile memory receives an instruction of prohibiting erasure of internal data, the instruction is stored by setting a prescribed flag provided in the nonvolatile memory at a predetermined value, and the content of the present nonvolatile memory cannot be erased after packaging, so that it is impossible for a user to alter the values of the flag which indicates whether erasure of data is prohibited or permitted.
31 Citations
14 Claims
- 1. A nonvolatile memory device provided with an erasure prohibiting circuit for prohibiting erasure of the content of data in said nonvolatile memory device, wherein said erasure prohibiting circuit permanently prohibits erasure of the data when an instruction to prohibit erasure is directed from the outside of said nonvolatile memory device.
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12. A nonvolatile memory device, wherein the electrically writable and erasable nonvolatile semiconductor memory device comprises a memory means that stores the erasure permitted state or the erasure prohibited state, and wherein said memory means is set at the erasure permitted state only when an erasure prohibiting setting means capable of setting either one of the erasure permitted state or the erasure prohibited state, and an erasure prohibition release means for forcibly releasing the erasure prohibited state, and said erasure prohibition release means are in the released state.
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13. A nonvolatile semiconductor memory device, wherein in the electrically writable and erasable nonvolatile memory device comprises a memory means that stores the erasure permitted state or the erasure prohibited state, and wherein said electrically erasable memory device comprises:
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an erasure prohibition setting means capable of setting the electrically writable and erasable nonvolatile memory devices to either one of the erasure permitted state or the erasure prohibited state based on information stored in said memory means; and
an erasure restricting means for setting the memory means at the erasure permitted state when the erasure prohibition setting means is in the erasure prohibited state.
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14. A method for manufacturing a nonvolatile memory device comprising the steps of:
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forming a plurality of nonvolatile memory chips on a substrate;
inspecting a threshold value of a memory cell in each nonvolatile memory chip;
initializing an erasure prohibition memory portion that is provided in a erasure prohibiting circuit for prohibiting erasure of a data content for storing either one of first information that prohibits erasure or second information that permits erasure;
encapsulating the wafer after separated it into a plurality of nonvolatile memory chips in packages;
writing a predetermined program into said nonvolatile memory chip; and
writing erasure prohibition information in said erasure prohibiting memory portion.
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Specification