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Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials

  • US 6,199,748 B1
  • Filed: 08/20/1999
  • Issued: 03/13/2001
  • Est. Priority Date: 08/20/1999
  • Status: Expired due to Fees
First Claim
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1. A method for forming a wafer of a compliant composite substrate, comprising the steps of:

  • a) selecting a first substrate material having a melting point of Tm1;

    b) selecting a second substrate material having a melting point of Tm2;

    c) selecting a joint metal with a melting point of Tm;

    wherein i) said joint metal and said first substrate material form a first eutectic alloy at a first eutectic temperature Teu1 while said joint metal and said second substrate material form a second eutectic alloy at a second eutectic temperature Teu2; and

    ii) Tm1 and Tm2>

    Tm>

    Teu1 and Teu2;

    d) depositing said joint metal on a side of said first substrate material to form a first intermediate substrate;

    e) depositing said joint metal on a side of said second substrate material to form a second intermediate substrate;

    f) forming a substrate pair by combining said first and second intermediate substrates such that said sides of said first substrate material and said second substrate material having said joint metal on them are against each other;

    g) ramping a temperature of said substrate pair up to at least Tm, whereby said temperature passes through Teu1 and Teu2; and

    h) cooling, after step (g), said substrate pair to form said compliant composite substrate.

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