Ion implantation method

• US 6,200,883 B1
• Filed: 06/16/1997
• Issued: 03/13/2001
• Est. Priority Date: 06/14/1996
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated, Intel Corporation
• Original Assignee: Applied Materials Incorporated
• Inventors: Adibi, Babak, Foad, Majeed Ali, Taylor, Mitchell C.
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US08/876,593
• Time in Patent Office: 1,366 Days
• Field of Search: 438/514, 438/527, 438/528, 438/FOR.161
• US Class Current: 438/514
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26566 of a cluster, e.g. using a gas cluster ion beam
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane

Abstract

In ion implantation processes for forming junctions in semiconductor devices, a proportion of ions implant into the semiconductor material beyond the desired junction depth due to channelling along axes and planes of symmetry in the crystal. A method is provided in which ions are implanted at a series of different energies starting with a lower energy than that required for the desired junction depth. The initial amorphising of the surface regions of the semiconductor during the lower energy implantation reduces the channelling probability when the ions are subsequently implanted at the full energy resulting in a more sharply defined junction.

Claims

1. A method of ion beam implanting ions containing a selected atomic specie through a surface of a semiconductor substrate to form a junction between regions of different conductivity type in the substrate at a desired depth below said surface, comprising the steps of selecting in accordance with said desired depth a maximum implant energy of said selected atomic specie and the total dose of said atomic specie to achieve a desired concentration of said specie implanted in the region in front of said junction, and ion beam implanting a part of said dose with said atomic specie at below said maximum implant energy before completing said dose at said maximum energy, said maximum energy being no greater than 10 keV.

2. A method of implanting as claimed in claim 1, wherein said dose is implanted in at least two steps at different implant energies for said atomic specie.

3. A method of implanting as claimed in claim 1, wherein said implant energy is progressively increased to said maximum.

4. A method of implanting as claimed in claim 1, wherein at least 5% of said dose is implanted initially at less than 50% of said maximum energy.

5. A method of implanting as claimed in claim 4, wherein between 5% and 20% of said dose is implanted initially at less than 50% of said maximum energy.

6. A method of implanting as claimed in claim 5, wherein between 5% and 20% of said dose is implanted initially at less than 30% of said maximum energy.

7. A method of implanting as claimed in claim 1, wherein up to 50% of the said dose is implanted initially at up to 70% of said maximum energy.

8. A method of implanting as claimed in claim 1, wherein said maximum energy is no greater than 5 keV.

9. A method of implanting as claimed in claim 1, wherein the energies at which said dose is implanted are selected to reduce the number of implanted ions penetrating in the substrate beyond said desired depth.

10. A method of implanting as claimed in claim 1, wherein the energies at which said dose is implanted are selected to produce a profile of the concentration of implanted ions in a region of the substrate in front of the junction which is closer to a desired ideal profile.

11. A method of implanting as claimed in claim 10, wherein said desired ideal profile is a concentration which is uniform with depth.

13. A method of implanting as claimed in claim 1, wherein said part of said dose is implanted by implanting ions having a higher mass to charge ratio than ions implanted to complete said dose.

14. A method of implanting as claimed in claim 13, wherein said higher mass to charge ratio ions are implanted at the same energy as said ions implanted to complete the dose.

17. A semiconductor device having an implanted region formed by a method as claimed in any of claims 1, 12 or 15.

18. An integrated circuit incorporating a semiconductor device as claimed in claim 17.

12. A method of forming by ion beam implantation in a semiconductor substrate, a junction between region of different conductivity at a desired depth below a surface of said substrate comprising ion beam implanting ions through said substrate surface at a first energy to amorphise said semiconductor material beneath said surface in front of the desired junction depth and then ion beam implanting ions at a higher energy through said amorphised semiconductor, said higher energy being no greater than 10 keV.

15. A method of implanting ions containing atomic species of a selected conductivity doping type through a surface of a semiconductor substrate to form a junction at a desired depth below said surface between an upper region doped with said atomic species to have said selected conductivity type and a lower region of the opposite conductivity type, the method comprising a first step of implanting ions containing a first atomic specie of said selected conductivity doping type at a first implant energy less than the energy required for said first atomic specie to penetrate to said desired depth, and a subsequent step of implanting ions containing a second atomic specie of said selected conductivity doping type which has a lower atomic weight than said first specie at a second implant energy at which said second atomic specie will penetrate to form said junction at said desired depth, said second implant energy being no greater than 10 keV.

16. A method of implanting ions as claimed in claim 15, wherein the ions implanted in said first and subsequent steps are at the same energy.