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Ion implantation method

  • US 6,200,883 B1
  • Filed: 06/16/1997
  • Issued: 03/13/2001
  • Est. Priority Date: 06/14/1996
  • Status: Expired due to Term
First Claim
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1. A method of ion beam implanting ions containing a selected atomic specie through a surface of a semiconductor substrate to form a junction between regions of different conductivity type in the substrate at a desired depth below said surface, comprising the steps of selecting in accordance with said desired depth a maximum implant energy of said selected atomic specie and the total dose of said atomic specie to achieve a desired concentration of said specie implanted in the region in front of said junction, and ion beam implanting a part of said dose with said atomic specie at below said maximum implant energy before completing said dose at said maximum energy, said maximum energy being no greater than 10 keV.

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