Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits
First Claim
1. A method of forming a smooth edged polysilicon gate in an integrated circuit device comprising:
- providing a gate oxide layer over the surface of a semiconductor substrate;
depositing a polysilicon layer overlying said gate oxide layer;
depositing a masking layer over said polysilicon layer;
patterning said masking layer to leave a mask overlying a region where said gate is formed;
ion implanting said polysilicon layer in portions not covered by said mask thereby amorphizing said polysilicon layer not covered by said mask and amorphizing a portion of said polysilicon layer covered by said mask by lateral diffusion of said ions; and
etching away said polysilicon layer not covered by said mask to form said polysilicon gate having a smooth region of said amorphized polysilicon layer along edges of said polysilicon gate to complete formation of said smooth edged polysilicon gate completing fabrication of said integrated circuit device.
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Abstract
A method for forming gate structures with smooth sidewalls by amorphizing the polysilicon along the gate boundaries is described. This method results in minimal gate depletion effects and improved critical dimension control in the gates of smaller devices. The method involves providing a gate silicon oxide layer on the surface of the semiconductor substrate. A gate electrode layer, such as polysilicon is deposited over the gate silicon oxide followed by a masking oxide layer deposited over the gate electrode layer. The masking oxide layer is patterned for the formation of the gate electrode. An ion implantation of silicon or germanium amorphizes the area of the polysilicon not protected by the masking oxide mask and also amorphizes the area along the boundaries of the polysilicon gate. Thereafter, the amorphized silicon is then removed by an anisotropic etch leaving a narrow area of amorphized silicon on the gate electrode sidewalls under the edges of the masking oxide mask completing the gate structure having smooth sidewalls.
16 Citations
23 Claims
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1. A method of forming a smooth edged polysilicon gate in an integrated circuit device comprising:
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providing a gate oxide layer over the surface of a semiconductor substrate;
depositing a polysilicon layer overlying said gate oxide layer;
depositing a masking layer over said polysilicon layer;
patterning said masking layer to leave a mask overlying a region where said gate is formed;
ion implanting said polysilicon layer in portions not covered by said mask thereby amorphizing said polysilicon layer not covered by said mask and amorphizing a portion of said polysilicon layer covered by said mask by lateral diffusion of said ions; and
etching away said polysilicon layer not covered by said mask to form said polysilicon gate having a smooth region of said amorphized polysilicon layer along edges of said polysilicon gate to complete formation of said smooth edged polysilicon gate completing fabrication of said integrated circuit device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a smooth edged polysilicon gate in an integrated circuit device comprising:
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providing a gate oxide layer over the surface of a semiconductor substrate;
depositing a polysilicon layer overlying said gate oxide layer;
depositing a masking layer over said polysilicon layer;
patterning said masking layer to leave a mask overlying a region where said gate is formed;
ion implanting said polysilicon layer in at least two steps with increasing energy levels in portions not covered by said mask thereby amorphizing said polysilicon layer not covered by said mask and amorphizing a portion of said polysilicon layer covered by said mask by lateral diffusion of said ions; and
etching away said polysilicon layer not covered by said mask to form said polysilicon gate having a smooth region of said amorphized polysilicon layer along the edges of said polysilicon gate to complete formation of said smooth edged polysilicon gate in the fabrication of said integrated circuit device. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of forming a smooth edged polysilicon gate in an integrated circuit device comprising:
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providing a gate oxide layer over the surface of a semiconductor substrate;
depositing a polysilicon layer overlying said gate oxide layer;
depositing a masking layer over said polysilicon layer;
patterning said masking layer to leave a mask overlying a region where said gate is formed;
ion implanting said polysilicon layer in portions not covered by said mask wherein said ions are implanted at a first energy level of between about 30 to 50 keV, a second energy level of between about 60 to 80 keV, and a third energy level of between about 90 to 120 keV, thereby amorphizing said polysilicon layer not covered by said mask and amorphizing a portion of said polysilicon layer covered by said mask by lateral diffusion of said ions; and
etching away said polysilicon layer not covered by said mask to form said polysilicon gate having a smooth region of said amorphized polysilicon layer along the edges of said polysilicon gate to complete formation of said smooth edged polysilicon gate in the fabrication of said integrated circuit device. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification