Method and apparatus for plasma processing with control of ion energy distribution at the substrates

• US 6,201,208 B1
• Filed: 11/04/1999
• Issued: 03/13/2001
• Est. Priority Date: 11/04/1999
• Status: Expired due to Term

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Wang, Shiang-Bau, Wendt, Amy Eileen
• Primary Examiner(s): Walberg, Teresa
• Assistant Examiner(s): VAN, QUANG T
• Application Number:
  US09/433,461
• Time in Patent Office: 495 Days
• Field of Search: 219/121.41, 219/121.43, 219/121.54, 361/234, 361/253, 156/345, 204/198.35, 204/298.11, 204/298.39, 204/192.3, 204/192.12, 118/723.I
• US Class Current: 219/121.41
• CPC Class Codes: B23K 10/003 Scarfing, desurfacing or deburring by applying flames B23K7/06
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

In plasma processing, a bias voltage is provided from a power supply through a DC blocking capacitor to a platform on which a substrate to be treated is supported within a plasma reactor. The periodic bias voltage applied to the DC blocking capacitor has a waveform comprised of a voltage pulse peak followed by a ramp down of voltage from a first level lower than the pulse peak to a second lower level, the period of the bias waveform and the ramp down of voltage in each cycle selected to compensate for and substantially cancel the effect of ion accumulation on the substrate so as to maintain a substantially constant DC self-bias voltage on the substrate between the voltage pulse peaks. The waveform may include a single voltage pulse peak followed by a ramp down in voltage during each cycle of the bias voltage such that the ion energy distribution function at the substrate has a single narrow peak centered at a selected ion energy. The waveform may also comprise two voltage pulse peaks each followed by a ramp down of voltage selected to provide a bias voltage at the substrate comprising two voltage peaks during each cycle with DC self-bias voltages following each pulse peak at two different substantially constant DC levels, resulting in an ion energy distribution function at the substrate that includes two peaks of ion flux centered at two selected ion energies with substantially no ion flux at other ion energies. The ion energy distribution function may thus be tailored to best accommodate the desired plasma treatment process and can be used to reduce the effects of differential charging of substrates.

Claims

1. A method of plasma ion treatment of a substrate comprising:

(a) enclosing the substrate in a plasma reactor with a plasma forming gas;

(b) forming a plasma in the reactor by exciting the plasma forming gas; and

(c) applying a periodic bias voltage to the substrate through a DC blocking capacitor, each cycle of which has a waveform comprised of a voltage pulse peak followed by a ramp down of voltage from a first level lower than the pulse peak to a second lower level, the period of the bias voltage waveform applied to the DC blocking capacitor and the ramp down of voltage in each cycle selected to compensate for and substantially cancel the effect of ion accumulation on the substrate so as to maintain a substantially constant DC self-bias voltage on the substrate between the voltage pulse peaks, the waveform of each cycle of the bias voltage appearing on the substrate comprising a narrow pulse of voltage during which electrons are attracted from the plasma to the substrate followed by a substantially constant DC bias voltage level resulting from a self-bias of the substrate.

2. The method of claim 1 wherein there is a single voltage pulse peak followed by a ramp down in voltage during each cycle of the bias voltage applied to the DC blocking capacitor such that ion energy distribution function for ions at the surface of the substrate has a single narrow peak centered at a selected ion energy.

3. The method of claim 1 wherein during each cycle of the bias voltage applied to the DC blocking capacitor the waveform comprises two voltage pulse peaks each followed by a ramp down of voltage, the separation in time between the voltage pulse peaks, the heights of the voltage pulse peaks, and the ramp down of voltage between pulse peaks selected to provide a bias voltage at the substrate comprising two voltage peaks during each cycle with a substantially constant DC self-bias voltage following each pulse peak at two different substantially constant DC levels to provide an ion energy distribution function at the substrate that includes two peaks of ion flux centered at two selected ion energies with substantially no ion flux at other ion energies.

4. The method of claim 1 wherein the frequency of the bias voltage waveform applied to the DC blocking capacitor is between about 200 kHz to 500 kHz.

5. The method of claim 1 including monitoring the voltage at the output side of the DC blocking capacitor that is provided to the substrate and adjusting the slope of the ramp down of voltage of the bias voltage waveform applied to the DC blocking capacitor to maintain the voltage at the output of the DC blocking capacitor substantially constant between voltage pulse peaks.

6. The method of claim 5 further including monitoring the voltage across the DC blocking capacitor to estimate ion flux based on the slope of the ramp down of voltage in each cycle of the bias voltage waveform.

7. The method of claim 1 wherein the plasma forming gas in the reactor is excited to form a low pressure high density plasma.

8. The method of claim 1 wherein the substrate includes crystalline silicon with a layer of SiO2thereon.

9. The method of claim 1 wherein the plasma forming gas includes argon.

10. Plasma treatment apparatus comprising:

(a) a plasma reactor for enclosing a plasma forming gas and a platform for supporting a substrate to be treated;

(b) a plasma excitation source coupled to the reactor to excite the plasma forming gas in the reactor;

(c) a DC blocking capacitor electrically connected to the platform supporting the substrate in the plasma reactor; and

(d) a bias power supply connected to the DC blocking capacitor to supply bias voltage through the DC blocking capacitor to the platform and to the substrate supported thereon, the bias voltage having a waveform comprised of a voltage pulse peak followed by a ramp down of voltage from a first level lower than the pulse peak to a second lower level, the period of the bias waveform applied to the DC blocking capacitor and the ramp down of voltage in each cycle selected to compensate for and substantially cancel the effect of ion accumulation on the substrate so as to maintain a substantially constant DC self-bias voltage on the substrate between the voltage pulse peaks, whereby the waveform of each cycle of the bias voltage appearing on the substrate comprises a narrow pulse of voltage during which electrons are attracted from the plasma to the substrate followed by a substantially constant DC bias voltage level resulting from a self-bias of the substrate.

11. The apparatus of claim 10 wherein the waveform of the bias voltage from the bias power supply has a single voltage pulse peak followed by a ramp down in voltage during each cycle of the bias voltage applied to the DC blocking capacitor such that ion energy distribution function for ions at the surface of the substrate has a single narrow peak centered at a selected ion energy.

12. The apparatus of claim 10 wherein the waveform of the bias voltage from the bias power supply during each cycle comprises two voltage pulse peaks, each followed by a ramp down of voltage, the separation in time between the voltage pulse peaks, the heights of the voltage pulse peaks, and the ramp down of voltage between pulse peaks selected to provide a bias voltage at the substrate comprising two voltage peaks during each cycle with DC self-bias voltages following each peak at two different substantially constant DC levels to provide an ion energy distribution function at the substrate that includes two peaks of ion flux centered at two selected ion energies with substantially no ion flux at other ion energies.

13. The apparatus of claim 10 wherein the frequency of the bias voltage waveform applied by the bias power supply to the DC blocking capacitor is about 500 kHz.

14. The apparatus of claim 10 including means for monitoring the voltage at the output side of the DC blocking capacitor that is provided to the platform and substrate and adjusting the slope of the ramp down of voltage of the waveform applied by the bias power supply to the DC blocking capacitor to maintain the voltage at the output of the DC blocking capacitor substantially constant between voltage pulse peaks.

15. The apparatus of claim 14 further including means for monitoring the voltage across the DC blocking capacitor to estimate the ion flux based on the slope of the ramp down of voltage in each cycle of the bias voltage waveform.

16. The apparatus of claim 10 wherein the plasma excitation source excites the plasma forming gas in the reactor to form a low pressure high density plasma.

17. The apparatus of claim 10 wherein the plasma forming gas includes argon.

18. The apparatus of claim 10 wherein the bias power supply comprises a signal generator connected to provide a selected output waveform to a power amplifier having a frequency response, wherein the signal generator provides an output waveform tailored to the frequency response of the power amplifier such that the output of the power amplifier comprises the bias voltage waveform applied to the DC blocking capacitor.