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Compact low power complement FETs

  • US 6,201,267 B1
  • Filed: 03/01/1999
  • Issued: 03/13/2001
  • Est. Priority Date: 03/01/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a first Field Effect Transistor (FET) having a first gate, a first channel region and a first source/drain pair;

    a second FET complementary to and vertically adjacent the first FET, and having a second gate separate from the first gate, a second channel region and a second source/drain pair;

    wherein an angle between the first source/drain pair and the second source/drain pair is nonzero and other than 180 degrees; and

    wherein the first channel region and the second channel region are situated between the first gate and the second gate.

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