Radio frequency variable gain amplifier fabricated in complementary metal oxide semiconductor technology

• US 6,201,443 B1
• Filed: 11/20/1998
• Issued: 03/13/2001
• Est. Priority Date: 11/20/1997
• Status: Expired due to Term

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Applied Micro Circuits Corporation (MACOM Technology Solutions Holdings, Inc.)
• Inventors: Tanji, Todd M.
• Primary Examiner(s): Mottola, Steven J.
• Application Number:
  US09/196,831
• Time in Patent Office: 844 Days
• Field of Search: 330/253, 330/254, 327/359
• US Class Current: 330/254
• CPC Class Codes: H03G 1/0029 using FETs

Abstract

The VGA according to the present invention generally includes a first gain cell, a second gain cell that is operably connected to the first gain cell, and a current control circuit portion that is operably connected to the first and second gain cells. The first gain cell has a transconductance and preferably comprises a pair of MOSFETs. The second gain cell has a transconductance and also preferably comprises a pair of MOSFETs. The first and second gain cells receive an input signal and produce an output signal that is amplified in proportion to their transconductance. The current control circuit portion controls the amount of current sent to the first and second gain cells and, as such, also controls their transconductance. Note that the transconductance of the first gain cell is designed to be larger by a predetermined amount than the transconductance of the second gain cell for a given amount of current.

Claims

1. A variable gain amplifier, comprising:

an input terminal;

a first gain generating circuit portion connected to the input terminal, wherein said first gain generating circuit portion has a first transconductance;

a second gain generating circuit portion connected to the input terminal, and wherein said second gain generating circuit portion has a second transconductance, wherein said first transconductance is larger by a predetermined amount than said second transconductance for a given amount of current, wherein said second gain generating circuit portion is operably connected to said first gain generating portion, and wherein said first and second gain generating circuit portions produce an output signal that is amplified in proportion to said first transconductance and said second transconductance, respectively; and

,

a current control circuit portion operably connected to said first and second gain generating circuit portions, wherein said current control circuit portion controls the amount of current to said first and second gain generating circuit portions, wherein said current control circuit portion comprises first and second MOSFETs configured as a differential pair.

2. The amplifier of claim 1, wherein said first gain generating circuit portion comprises first and second MOSFETs configured as a differential pair.

3. The amplifier of claim 1, wherein said second gain generating circuit portion comprises first and second MOSFETs configured as a differential pair.

4. The amplifier of claim 1, wherein said first and second gain generating circuit portions and said current control portion are fabricated on a single, CMOS integrated circuit (IC) chip.

5. The amplifier of claim 1, further comprising an automatic gain control circuit connected to the current control portion.

6. The amplifier of claim 5, wherein said amplifier maintains a non-decreasing signal-to-noise ratio in the face of a decreasing gain.

7. The amplifier of claim 6, wherein said decreasing gain is adjusted by said automatic gain control circuit.

8. The amplifier of claim 1, further comprising an input impedance and an output impedance.

9. The amplifier of claim 8, wherein said input impedance and said output impedance are constant.

10. The amplifier of claim 1, wherein said amplifier maintains a constant output signal saturation level.

11. The amplifier of claim 1, wherein said amplifier has a gain and a power dissipation, and wherein said power dissipation is fixed over all gain variations.

12. The amplifier of claim 1, wherein said first and second transconductances are modified according to a control voltage.

13. A variable gain amplifier, comprising:

a first gain generating means for generating a first gain, said first gain generating means having a first transconductance;

a second gain generating means for generating a second gain, said second generating means having a second transconductance, wherein said second gain generating means is operably connected to said first gain generating means, wherein said first transconductance is larger by a predetermined amount than said second transconductance for a given amount of current, wherein said first and second gain generating means receive an input signal, and wherein said first and second gain generating means produce an output signal that is amplified in proportion to said first gain and said second gain, respectively; and

,

a current control means operably connected to said first and second gain generating means, said current control means for controlling the amount of current to said first and second gain generating means, wherein said current control means comprises first and second MOSFETs configured as a differential pair.

14. The amplifier of claim 13, wherein said first gain generating means comprises first and second MOSFETs configured as a differential pair.

15. The amplifier of claim 13, wherein said second gain generating means comprises first and second MOSFETs configured as a differential pair.

16. The amplifier of claim 13, wherein said first and second gain generating means and said current control means are fabricated on a single, CMOS integrated circuit (IC) chip.

17. The amplifier of claim 13, further comprising an automatic gain control means connected to said current control means.

18. The amplifier of claim 17, wherein said amplifier maintains a non-decreasing signal-to-noise ratio in the face of decreasing gain.

19. The amplifier of claim 18, wherein said decreasing gain is adjusted by said automatic gain control means.

20. The amplifier of claim 13, further comprising an input impedance and an output impedance.

21. The amplifier of claim 20, wherein said input impedance and said output impedance are constant.

22. The amplifier of claim 13, wherein said amplifier maintains a constant output signal saturation level.

23. The amplifier of claim 13, wherein said amplifier has a power dissipation, and wherein said power dissipation is fixed over all gain variations.

24. The amplifier of claim 13, wherein said first and second transconductances are modified according to a control voltage.

25. A method of amplifying an input signal, comprising the steps of:

providing a variable control voltage;

providing a current source;

receiving an input signal;

using two MOSFETs configured as a differential pair, directing an amount of said current to a first gain cell having a first transconductance and a second gain cell having a second transconductance, wherein said first transconductance is larger by a predetermined amount than said second transconductance, for a given amount of current;

according to the level of said variable control voltage;

generating a gain from said first and second gain cells;

amplifying said input signal with said gain from said first and second gain generating circuit portions; and

outputting the amplified input signal.

26. The method of claim 25, further comprising the step of maintaining a constant output signal level.

27. The method of claim 25, wherein said first gain cell comprises two MOSFETs configured as a differential pair.

28. The method of claim 25, wherein said second gain cell comprises two MOSFETs configured as a differential pair.

29. The method of claim 25, wherein said first gain cell comprises a first pair of MOSFETs, wherein said second gain cell comprises a second pair of MOSFETs, and wherein said step of directing an amount of said current is performed by a circuit portion comprising a third pair of MOSFETs.

30. The method of claim 29, wherein said first gain generating circuit portion, said second gain generating circuit portion, and said circuit portion are fabricated on a single, CMOS integrated circuit.