Process for fabricating an optical mirror array

• US 6,201,631 B1
• Filed: 04/26/2000
• Issued: 03/13/2001
• Est. Priority Date: 10/08/1999
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Greywall, Dennis Stanley
• Primary Examiner(s): Ben, Loha
• Application Number:
  US09/559,216
• Time in Patent Office: 321 Days
• Field of Search: 359/290, 359/291, 359/295, 359/223, 359/224, 359/245, 359/248, 359/230, 359/214, 438/52, 438/72, 345/84, 335/222, 335/223, 335/229
• US Class Current: 359/245
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: Y10S 359/904 Micromirror

Abstract

An electro-optic device which includes a mirror array attached to a base substrate is disclosed. The mirror array comprises a substrate having a plurality of spaced-apart mirrors with underlying cavities (each having a diameter at least about the same size as that of the overlying mirror) formed therein. The base substrate includes a plurality of electrodes as well as a plurality of electrical interconnections. The mirror array is attached to the base substrate so that each mirror of the array as well as a cavity are supported above a set of electrodes. Each mirror of the mirror array rotates relative to the major plane of the substrate in response to an electrical signal. The application of an electrical potential to each mirror relative to at least one electrode of the set of electrodes causes the desired rotation (depending on the magnitude of the electrical potential) up to an angle of about 20 degrees.

Claims

1. A process for fabricating an electro-optic device comprising:

providing a first substrate having a first layer of semiconductor material and a second layer of semiconductor material separated by a layer of an oxidized semiconductor material;

forming a cavity in the first layer of semiconductor material wherein the cavity terminates at the layer of oxidized semiconductor material;

defining a mirror element in the second layer of semiconductor material wherein the mirror element has a location in the second layer of material that corresponds to the location of the cavity in the first layer of material and wherein the mirror element has first and second major surfaces;

removing the layer of oxidized material between the mirror element and the cavity;

providing a second semiconductor substrate having electrodes formed thereon;

placing the first substrate in contact with the second substrate so that the electrodes on the second substrate are under the mirror element in the first substrate and disposed in the cavity in the first substrate; and

bonding the first substrate to the second substrate.

2. The process of claim 1 wherein the first and second semiconductor layers are silicon and wherein the silicon is selected from the group consisting of single crystal silicon and polycrystalline silicon.

3. The process of claim 2 wherein the first and second semiconductor layers are doped to be conductive.

4. The process of claim 1 wherein the semiconductor substrate is a silicon on insulator substrate.

5. The process of claim 1 wherein the mirror element is defined in the second layer of semiconductor material by forming a layer of energy sensitive material over the second layer of semiconductor material, delineating a pattern in the energy sensitive resist material and transferring the delineated pattern into the underlying layer of semiconductor material.

6. The process of the claim 1 wherein the mirror element is connected to the second layer of semiconductor material via a plurality of torsional members.

7. The process of claim 1 wherein the mirror element comprises a mirror and a supporting structure wherein the mirror is connected to the supporting structure by a plurality of torsional members and the supporting structure is connected to the second layer by a plurality of torsional members.

8. The process of claim 1 wherein the first substrate is bonded to the second substrate by a technique selected from the group consisting of fusion bonding, flip chip bonding and epoxy bonding.

9. The process of claim 1 further comprising depositing metal on the first and second major surfaces of the mirror element.