Integrated electrical overload protection device and method of formation

• US 6,201,679 B1
• Filed: 06/04/1999
• Issued: 03/13/2001
• Est. Priority Date: 06/04/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: California Micro Devices Corporation (ON Semiconductor Corporation)
• Inventors: Richiuso, Dominick
• Primary Examiner(s): SHERRY, MICHAEL JUDE
• Application Number:
  US09/326,499
• Time in Patent Office: 648 Days
• Field of Search: 361/103, 361/104, 361/93.8, 361/124, 296/23, 337/107, 337/139, 337/142, 337/158, 337/159, 337/160, 337/290, 337/297, 337/306, 337/405
• US Class Current: 361/103
• CPC Class Codes: H01L 23/62 Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An integrated electrical overload protection device and method of formation which functions as a thermal fuse. The device is integrated directly on the underlying structural or foundational material of an electrical circuit which experiences the electrical overstress. The device can be formed according to standard semiconductor process steps when formed on a semiconductor substrate. The device, or fuse, includes a first and second contact area separated by a gap area. A least a portion of the upper surfaces of the contact areas are covered with a wettable material such as gold. A solder bump, or bridge, is applied which spans the contact areas and provides an closed electrical connection. Upon application of an overload condition across the bridge material, a rise in temperature causes the solder material to melt. The solder flows onto the wettable areas and is drawn out of the gap area to thereby disrupt the electrical connection between the contact areas. The contacts areas, gap, and solder material can be varied to provide fuses with different characteristics.

Claims

1. An integrated thermal overload protection apparatus for an electrical device which is formed on an underlying structure, the apparatus comprising:

a first and second contact area integrally formed on the underlying structure, the contact areas being separated by a gap area;

underbump metallurgy layers overlying each of the first and second contact areas and separated by the gap area, each underbump metallurgy layer having an upper surface with at least a portion of each upper surface covered by a wettable material defining a wettable area;

a solder bump formed on the wettable areas, the solder bump forming a solder bridge between the contact areas;

wherein an overload condition applied across the first and second contact areas and through the solder bridge will cause the solder bridge to melt, and the wettable material will draw the molten solder out of the gap area and onto the wettable areas, thereby opening the electrical connection between the contact areas.

2. The integrated thermal overload protection apparatus of claim 1, wherein the underlying structure includes at least a semiconductor substrate layer.

3. The integrated thermal overload protection apparatus of claim 2, wherein the electrical device is monolithically formed with the thermal overload protection apparatus.

4. The integrated thermal overload protection apparatus of claim 1, wherein the wettable material includes Au.

5. The integrated thermal overload protection apparatus of claim 1, wherein the contact area is formed from aluminum.

6. An integrated thermal overload protection apparatus for an electrical device which is formed on an underlying structure including at least a semiconductor substrate layer, the apparatus comprising:

a first and second contact area integrally formed on the underlying structure, the contact areas each having an upper surface and separated by a gap area, wherein at least one underbump metallurgy layer is applied between the contact areas and a wettable material, the wettable material defining a wettable area;

a solder bump formed on the wettable areas, the solder bump forming a solder bridge between the contact areas;

wherein an overload condition applied across the first and second contact areas and through the solder bridge will cause the solder bridge to melt, and the wettable material will draw the molten solder out of the gap area and onto the wettable areas, thereby opening the electrical connection between the contact areas.

7. The integrated thermal overload protection apparatus of claim 6, wherein a first underbump metallurgy layer is formed from a barrier/adhesion material and a second underbump metallurgy layer is formed from a SEED material.

8. The integrated thermal overload protection apparatus of claim 7, wherein the first barrier/adhesion material includes Ti, and the SEED material includes Cu.

9. A method for forming an integrated thermal overload protection apparatus on the underlying structure of an electrical device according to semiconductor process steps, the method comprising:

forming on the underlying structure a first metallic contact area and a second metallic contact area separated by a gap area, with an opening through a passivation layer for accessing the contact areas and gap area;

applying a barrier/adhesion underbump metallurgy layer;

applying an SEED underbump metallurgy layer;

applying a photoresist mask to define wettable areas on the first and second contact areas;

forming a wettable material onto the defined wettable areas, and stripping away the photoresist;

applying a photoresist mask to define the gap area;

etching away the underbump metallurgy layers, and stripping away the photoresist;

applying a photoresist mask to define a solder bridge area;

forming a solder bridge between the first and second contact areas, and stripping away the photoresist; and

applying a flux to the solder bridge area.

10. The method for forming an integrated thermal overload protection apparatus of claim 9, wherein an overload condition applied across the first and second contact areas and through the solder bridge will cause the solder bridge to melt, and the wettable material will draw the molten solder out of the gap area and onto the wettable areas, thereby opening the electrical connection between the contact areas.

11. The method for forming a thermal overload protection apparatus of claim 10, wherein the barrier/adhesion is formed from Ti, and the SEED underbump metallurgy layer is formed from Cu.

12. The thermal overload protection apparatus of claim 9, wherein the wettable material includes Au.

13. The thermal overload protection apparatus of claim 9, wherein the contact area is formed from Aluminum.

14. A method for forming an integrated thermal overload protection apparatus on the underlying structure of an electrical device, the method comprising:

forming on the underlying structure a first metallic contact area and a second metallic contact area separated by a gap area;

forming underbump metallurgy layers over each of the first and second metallic contact areas, the underbump metallurgy layers being separated by the gap area;

defining wettable areas on the underbump metallurgy layers of the first and second contact areas;

forming a wettable material onto the defined wettable areas;

defining a solder bridge area;

forming a solder bridge to span the first and second contact areas; and

applying a flux to the solder bridge area.

15. The method for forming an integrated thermal overload protection apparatus of claim 14, wherein the underlying structure of the electrical device is a semiconductor substrate.

16. The method for forming an integrated thermal overload protection apparatus of claim 15, wherein the method uses standard semiconductor process steps.

17. The method for forming an integrated thermal overload protection apparatus of claim 14 wherein the underbump metallurgy layer further comprises a barrier/adhesion underbump metallurgy layer directly overlying each of the first and second contacts and a SEED underbump metallurgy layer overlying the barrier/adhesion underbump metallurgy layer.

18. A method for providing electrical overload protection to an associated device having a foundational material, the method comprising:

forming a thermally responsive fuse device directly on the foundational material of the associated device, wherein the associated device is monolithically formed with the thermally responsive fuse device, the thermally responsive fuse device further including;

a first and second contact area integrally formed on the foundational material, the contact areas being separated by a gap area;

underbump metallurgy layers overlying each of the first and second contact areas and separated by the gap area, each underbump metallurgy layer having an upper surface with at least a portion of each upper surface covered by a wettable material defining a wettable area; and

a solder bump formed on the wettable areas, the solder bump forming a solder bridge between the contact areas;

wherein an overload condition applied across the first and second contact areas and through the solder bridge will cause the solder bridge to melt, and the wettable material will draw the molten solder out of the gap area and onto the wettable areas, thereby opening the electrical connection between the contact areas.

19. The method for providing electrical overload protection to an associated device of claim 18, wherein the foundational material of the associated device is a semiconductor substrate and wherein the method uses semiconductor process steps.

20. A method for forming an integrated thermal overload protection apparatus on the underlying structure of an electrical device, the method comprising:

forming on the underlying structure a first conductive contact area and a second conductive contact area separated by a gap area;

forming an underbump metallurgy layer overlying the first and second conductive contact areas;

applying a photoresist mask to define wettable areas on the underbump metallurgy layer;

forming a wettable material onto the defined wettable areas, and stripping away the photoresist;

applying a photoresist mask to define the gap area;

etching away the underbump metallurgy layers to form the gap area, and stripping away the photoresist;

applying a photoresist mask to define a solder bridge area;

forming a solder bridge between the first and second contact areas, and stripping away the photoresist; and

applying a flux to the solder bridge area.

21. An integrated thermal overload protection apparatus for an electrical device which is formed on an underlying structure, the apparatus comprising:

first and second contact areas integrally formed on the underlying structure, the first and second contact areas being separated by a gap area;

a layer of wettable material overlying each of the first and second contact areas and separated by the gap area, the wettable material defining wettable areas, the wettable material being a material selected from the group consisting of gold, paladium and platinum; and

a solder bump formed on the wettable areas of the first and second contact areas, the solder bump forming a solder bridge between the contact areas.

22. The integrated thermal overload protection apparatus of claim 21 wherein the first and second contact areas each further include an underbump metallurgy layer underlying each layer of wettable material.