Electronic memory with disturb prevention function

• US 6,201,731 B1
• Filed: 05/28/1999
• Issued: 03/13/2001
• Est. Priority Date: 05/28/1999
• Status: Expired due to Fees

• Current Assignee: Celis Semiconductor Corp.
• Original Assignee: Celis Semiconductor Corp.
• Inventors: Coombe, George B., Meester, Troy A., Kamp, David A., Derbenwick, Gary F.
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Yoha, Connie C.
• Application Number:
  US09/322,490
• Time in Patent Office: 655 Days
• Field of Search: 365/185.02, 365/145, 365/192, 365/65, 365/194
• US Class Current: 365/185.02
• CPC Class Codes: G11C 11/22 using ferroelectric elements

Abstract

A ferroelectric destructive read-out memory system includes a power source, a memory array including a memory cell, and a logic circuit for applying a signal to the memory array. Whenever a low power condition is detected in said power source, a disturb prevent circuit prevents unintended voltages due to the low power condition from disturbing the memory cell. The disturb prevent circuit also stops the operation of the logic circuit for a time sufficient to permit a rewrite cycle to be completed, thereby preventing loss of the data being rewritten.

Claims

1. A destructive readout, nonvolatile memory system comprising:

a power source for applying electrical power to said memory system;

a destructive readout, nonvolatile memory cell for holding data;

an electronic circuit selected from the group consisting of;

a rewrite circuit for rewriting said data to said memory after it has been read;

a data storage element for holding said data to be rewritten to said memory; and

a power on reset circuit for resetting logic in said memory system when said voltage drops below an OFF threshold and then rises to an ON threshold; and

a disturb prevention circuit for controlling at least one of said power source and said electronic circuits to prevent said data from being disturbed during a period when said electrical power is unstable.

2. A ferroelectric memory system comprising:

a power source for applying electrical power to said memory system;

a memory cell for holding data, said memory cell including a ferroelectric material;

a conductor selected from the group consisting of a bit line and a plate line; and

a disturb prevention circuit for preventing signals that can disturb said data from being placed on said conductor during a period when said electrical power is unstable.

3. A memory system as in claim 2 wherein said period is selected from the group consisting of a power-up period, a power-down period, and a brownout period.

4. A memory system as in claim 2 wherein said disturb prevention circuit comprises a circuit for preventing disturb voltages from being applied to said memory cell during said period.

5. A memory system as in claim 2 wherein said memory includes:

a rewrite circuit for rewriting said data to said memory cell after it has been read; and

said disturb prevention circuit comprises a circuit for preventing one or more of the group consisting of;

reset of said rewrite circuit before said data is rewritten; and

overwriting of said data before said data is rewritten.

6. A memory system as in claim 2 wherein said disturb prevention circuit comprises a clamping circuit for clamping said conductor to a predetermined voltage.

7. A memory system as in claim 6 wherein said disturb prevention circuit comprises a circuit for clamping said plate line and said bit line to said predetermined voltage.

8. A memory system as in claim 7 wherein said voltage is the memory system ground.

9. A memory system as in claim 2 wherein said memory cell is part of an array of memory cells, said memory system further includes a logic circuit for applying signals to said array of memory cells and said power source applies power to said logic circuit and said memory array, and said disturb prevention circuit comprises a circuit for applying said power to said logic circuit prior to applying said power to said memory array.

10. A memory system as in claim 2 wherein said memory cell.

11. A memory system as in claim 2 wherein said memory system comprises an electrical line for applying a control signal within said memory system and said disturb prevention circuit comprises a disable circuit for disabling said control signal for a predetermined time.

12. A memory system as in claim 11 wherein said period is a power-up period and said predetermined time includes said power-up period.

13. A memory system as in claim 11 wherein said period is a power-down period and said predetermined time includes said power-down period.

14. A memory system as in claim 11 wherein said period is a brownout period and said predetermined time includes said brownout period.

15. A memory system as in claim 11 wherein said memory includes logic for applying a voltage signal to said memory cell, said period is a power-up period, and said predetermined time is a time sufficient to permit said logic to become operational.

16. A memory system as in claim 11 wherein said disable circuit includes a one-shot pulse generator circuit.

17. A memory system as in claim 11 wherein said disable circuit includes a latch.

18. A memory system as in claim 11 wherein said memory includes a logic circuit and said disable circuit includes a reset circuit for producing a reset signal for resetting said logic circuit.

19. A memory system as in claim 2 wherein said memory comprises a radio frequency identification card memory.

20. A memory system as in claim 2 wherein said memory includes a memory array and a logic circuit for applying a signal to said memory array, said cell is part of said memory array, and said disturb prevention circuit comprises a pause circuit for producing a pause signal for causing said logic circuit to pause during a predetermined time.

21. A memory system as in claim 20 wherein said logic circuit includes a timing generator responsive to said pause signal for pausing during said predetermined time.

22. A memory system as in claim 20 wherein said period is a brownout period and said predetermined time includes said brownout period.

23. A memory system as in claim 20 wherein said memory includes:

a circuit for reading said data and rewriting said data to said memory cell after it has been read; and

said predetermined time comprises a time sufficient to complete said rewriting of said data.

24. A memory system as in claim 20, wherein said disturb prevention circuit comprises a circuit for providing a freeze signal.

25. A memory system as in claim 24 wherein said memory includes a memory array and said memory cell is part of said memory array, said memory further includes a data storage element for holding data to be rewritten to said memory array, and a freeze circuit responsive to said freeze signal for preventing the state of said data storage element from changing.

26. A destructive readout memory system comprising:

a power source for applying electrical power to said memory system;

a destructive readout memory cell for holding data;

a logic circuit for writing, reading, and rewriting data into said memory cell; and

a disturb prevention circuit for preventing said data from being disturbed due to a condition in which said electrical power is unstable;

said disturb prevention circuit comprising a circuit communicating with said logic circuit for preventing said rewriting of said data from being disturbed due to said condition.

27. A memory system as in claim 26 wherein said condition is selected from the group consisting of a power-up condition, a power-down condition, a brownout condition.

28. A ferroelectric memory system comprising:

a power source for applying electrical power to said memory system;

a memory cell for holding data, said memory cell including a ferroelectric material;

a logic circuit for writing, reading, and rewriting data into said memory cell; and

a disturb prevention circuit for preventing said data from being disturbed due to a condition in which said electrical power is unstable;

said disturb prevention circuit comprising a circuit communicating with said logic circuit for preventing said rewriting of said data from being disturbed due to said condition.

29. A memory system as in claim 28 wherein said condition is selected from the group consisting of a power-up condition, a power-down condition, a brownout condition.

30. A memory system as in claim 28 wherein said logic circuit includes a data storage device for storing data to be rewritten into said memory cell, and said disturb prevention circuit comprises a circuit for preventing the loss of the data in said data storage device due to said condition.

37. A memory system as in claim 28 wherein said disturb prevention circuit consists essentially of transistors, inverters, and other electronic elements that operate reliably at voltages significantly less than the supply voltage of said memory system.

38. A memory system as in claim 28 and further including a circuit for producing a system supply voltage from a radio frequency source.

39. A memory system as in claim 38 wherein said disturb prevention circuit comprises a circuit for preventing disturb voltages from being applied to said memory cell due to said condition.

31. A ferroelectric memory system comprising:

a power source for applying electrical power to said memory system;

a memory cell for holding data, said memory cell including a ferroelectric material; and

a disturb prevention circuit for preventing said data from being disturbed due to a condition in which said electrical power is unstable;

wherein;

said power source comprises a source of a voltage;

said memory system further includes a memory array and said memory cell is part of said memory array;

said memory system further includes a logic circuit for applying an electrical signal to said memory array and a power-on-reset circuit for resetting said logic circuit when said voltage drops below an OFF threshold then rises to an ON threshold; and

said disturb prevention circuit comprises a circuit for preventing said resetting of said logic circuit from causing loss of said data.

32. A memory system as in claim 31 wherein said source of a voltage includes a circuit for producing said voltage from a radio frequency source.

33. A ferroelectric memory system comprising:

a power source for applying electrical power to said memory system;

a memory cell for holding data, said memory cell including a ferroelectric material; and

a disturb prevention circuit for preventing said data from being disturbed due to a condition in which said electrical power is unstable;

wherein said memory system includes a timing signal generator and said disturb prevention circuit comprises a pause signal generating circuit for generating a pause signal for preventing said timing signal generator from outputting signals that could result in loss of said data.

34. A memory system as in claim 33 wherein said pause signal generating circuit comprises a circuit for generating said pause signal for a predetermined time.

35. A memory system as in claim 33 wherein said memory system includes a state machine and said disturb prevention circuit comprises a circuit for inhibiting said state machine from outputting signals that could result in loss of said data.

36. A ferroelectric memory system comprising:

a power source for applying electrical power to said memory system;

a memory cell for holding data, said memory cell including a ferroelectric material; and

a disturb prevention circuit for preventing said data from being disturbed due to a condition in which said electrical power is unstable;

wherein said memory system includes a data storage element and said disturb prevention circuit comprises a freeze circuit for freezing the data content of said data storage element while a predetermined signal is applied to said freeze circuit.

40. A method of operating a destructive readout, nonvolatile memory having:

a memory cell in which data is stored; and

an electronic circuit selected from the group consisting of;

a rewrite circuit for rewriting said data to said memory after it has been read;

a data storage element for holding said data to be rewritten to said memory; and

a power on reset circuit for resetting logic in said memory system when said voltage drops below an OFF threshold and then rises to an ON threshold;

said method comprising the steps of;

sensing a low power condition of said memory; and

controlling at least one of said power source and said electronic circuits to Prevent unintended voltages produced by said low power condition from disturbing said data in said memory cell.

41. A method of operating a ferroelectric memory having a memory cell in which data is stored, and a conductor selected from the group consisting of a bit line and a plate line;

said method comprising the steps of;

sensing a low power condition of said memory; and

preventing unintended voltages produced by said low power condition from being placed on said conductor.

42. A method as in claim 41 wherein said step of preventing comprises clamping said conductor to a predetermined voltage.

43. A method as in claim 41 wherein:

said memory includes a logic circuit for applying a logic signal to said memory cell, and a memory array, said memory cell being part of said memory array; and

said step of preventing comprises directing power to said logic circuit, and then after said logic circuit has reached an operating voltage, directing power to said memory array.

44. A method as in claim 41 wherein said step of preventing comprises:

receiving a memory control signal; and

disabling said memory signal for a time period in which said low power condition could cause said unintended voltages.

45. A method as in claim 41 wherein said memory includes a logic circuit for applying a signal to said memory cell, and said step of preventing comprises stopping the operation of said logic circuit for a time period in which said low power condition could cause said unintended voltages.