Field effect transistor with controlled body bias
First Claim
Patent Images
1. A silicon-on-insulator logic circuit with controlled field effect transistor body potential, comprising:
- a) a silicon-on-insulator substrate with a silicon device layer separated from a base substrate by an insulating layer;
b) a field effect transistor formed in the silicon device layer including a source region and a drain region both of a first semiconductor conductivity, a gate electrode defining an electrically isolated central channel region of the opposite semiconductor conductivity between the source region and the drain region;
c) a clock signal defining a clock period with an active portion and a wait portion; and
d) a charge pump voltage signal comprising a negative voltage pulse dropping the signal potential of the charge pump signal to a pump potential and occurring during a portion of the wait portion of the clock period and coupled to at least one of the source region and drain region to drop the potential of such at least one of the source region and the drain region to the pump potential during the negative voltage pulse to create a forward bias junction between the at least one of a source region and drain region and the body region to drop the potential in the body region to a preset potential.
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Abstract
A field effect transistor (FET) is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. A clock signal defines a clock period with an active portion and a wait portion. The source region and/or the drain region are coupled to a body pumping signal. The body pumping signal includes a negative voltage pulse occurring during the wait portion which sets the voltage of a body region of the FET to a preset voltage during such negative voltage pulse. Decay of the preset voltage is predictable such that operation of the FET can be controlled during the active portion.
82 Citations
20 Claims
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1. A silicon-on-insulator logic circuit with controlled field effect transistor body potential, comprising:
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a) a silicon-on-insulator substrate with a silicon device layer separated from a base substrate by an insulating layer;
b) a field effect transistor formed in the silicon device layer including a source region and a drain region both of a first semiconductor conductivity, a gate electrode defining an electrically isolated central channel region of the opposite semiconductor conductivity between the source region and the drain region;
c) a clock signal defining a clock period with an active portion and a wait portion; and
d) a charge pump voltage signal comprising a negative voltage pulse dropping the signal potential of the charge pump signal to a pump potential and occurring during a portion of the wait portion of the clock period and coupled to at least one of the source region and drain region to drop the potential of such at least one of the source region and the drain region to the pump potential during the negative voltage pulse to create a forward bias junction between the at least one of a source region and drain region and the body region to drop the potential in the body region to a preset potential. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of controlling the floating body potential of a silicon on insulator field effect transistor, comprising:
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a) generating a clock signal to define a clock period with an active portion and a wait portion; and
(b) coupling at least one of a source region and a drain region of said field effect transistor to a body pumping voltage pulse during a portion of the wait portion to create a forward biased junction between a body region of said field effect transistor and the at least one of the source region and the drain region to sink a body potential to a known potential during the portion of the wait portion. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A static random access memory cell, comprising:
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a) a silicon-on-insulator substrate with a silicon device layer separated from a base substrate by an insulating layer;
b) a plurality of field effect transistor formed in the silicon device layer including a source region and a drain region both of a first semiconductor conductivity, a gate electrode defining an electrically isolated central channel region of the opposite semiconductor conductivity between the source region and the drain region;
c) SRAM circuitry interconnecting the source regions, drain region, and gate electrode of each field effect transistor to form an SRAM cell;
d) a clock signal defining a clock period with an active portion and a wait portion; and
d) a charge pump voltage signal comprising a negative voltage pulse dropping the signal potential of the charge pump signal to a pump potential and occurring during a portion of the wait portion of the clock period and coupled to at least one of the source region and drain region of at least one of the field effect transistors to drop the potential of at least one of the source region and the drain region to the pump potential during the negative voltage pulse to create a forward bias junction between the at least one of a source region and drain region and the body region to drop the potential in the body region to a preset potential. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification