Selective transfer of elements from one support to another support

• US 6,204,079 B1
• Filed: 07/14/1999
• Issued: 03/20/2001
• Est. Priority Date: 07/30/1998
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Aspar, Bernard, Moriceau, Hubert, Rayssac, Olivier
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): LEE, HSIEN MING
• Application Number:
  US09/352,783
• Time in Patent Office: 615 Days
• Field of Search: 438/406, 438/405, 438/401, 438/400, 438/403, 438/118, 438/412, 438/458, 438/977, 438/464, 438/460, 438/113, 438/125, 438/25, 438/64, 438/67, 257/623, 156/246, 156/250
• US Class Current: 438/25
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83191 wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12042 : LASER

Abstract

A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception support. Elements to be transferred are transferred by applying a bonding energy between them and the reception support that exceeds the bonding energy between their first face and the transfer support. Elements not to be transferred onto the transfer support are retained.

Claims

1. A process for the selective transfer of elements from a transfer support to a reception support, said elements bonding at a first face to the transfer support with a defined bonding energy, each of said elements having a second face configured to contact said reception support, the process comprising the steps of:

defining at least one transferring element among said elements, involving separation of said transferring element from the non-transferring elements;

treating the second face of said transferring element by giving it a bonding energy with said reception support exceeding said bonding energy between its first face and said transfer support;

retaining said non-transferring elements onto said transfer support;

configuring said second face of said transferring element to contact with said reception support; and

separating said transfer support from said reception support in order to transfer said transferring element onto said reception support and to retain other of said non-transferring elements on said transfer support.

2. A process according to claim 1, further comprising prior to the defining step the steps of:

forming said elements on a face of an initial substrate, said elements being supported on said face of said initial substrate by second face of said elements;

fixing said face of said initial substrate comprising said elements to said transfer support such that said elements bond to said transfer support through said first faces of said elements according to said defined bonding energy;

eliminating said initial substrate so that said second face of said elements exposes itself.

3. A process according to claim 2, wherein in said fixing step said face of said initial substrate comprising said elements fixes to said transfer support by molecular bonding.

4. A process according to claim 3, wherein said molecular bonding achieves at least one treatment of said faces fixing at least one of said initial substrate and said transfer support controlling at least one of hydrophilia, hydrophobia and micro-roughness capable of obtaining said defined bonding energy.

5. A process according to claim 4, wherein said hydrophilic surface is obtained by at least one of cleaning, roughness, and deposition.

6. A process according to claim 4, wherein said hydrophobic surface is obtained by at least one of cleaning and pollution by contact with tetrafluoroethylene.

7. A process according to claim 3, further comprising the step of applying a heat treatment globally or locally to contribute to obtaining said bonding energy defined between said face of said initial substrate comprising said elements and said transfer support.

8. A process according to claim 2, wherein in said forming step said elements include a stop layer configured to bond said elements to said initial substrate.

9. A process according to claim 2, wherein in said eliminating step said initial substrate is eliminated by at least one of grinding, chemical etching of at least one of said initial substrate and said stop layer, polishing, and separation subsequent to heat treatment along a plane of cleavage induced by ionic implantation.

10. A process according to claim 1, further comprising the steps of forming a continuous layer over said transfer support by said elements, and in the step of defining at least one transferring element isolating said transferring element.

11. A process according to claim 10, wherein said isolation is configured by at least one of chemical etching, cutting by blade, and laser etching.

12. A process according to claim 11, wherein when said isolation is configured by said chemical etching to form etching stands close to said transfer support.

13. A process according to claim 1, wherein said second face of said transferring element is configured to contact with said reception support by molecular bonding.

14. A process according to claim 13, further comprising the step of applying a heat treatment globally or locally to contribute to obtaining said bonding energy defined between said second face of said transferring element and said reception support.

15. A process according to claim 13, wherein said molecular bonding of said second face of said transferring element and said reception support is through treatment of at least one of said second face and at least a part of said reception support.

16. A process according to claim 1, wherein said retaining step comprises treating at least one of said non-transferring elements and areas on said reception support not suitable for receiving said elements such that there is no bond between said non-transferring elements and said reception support.

17. A process according to claim 16, wherein said retaining step comprises modifying at least one of said surface of said non-transferring elements and said surface of said reception support areas not suitable for receiving said elements configured to make said bonding energy between said non-transferring elements and said reception support less than said bonding energy between said transferring elements and said reception support, and less than said bonding energy between the first faces of the elements and said transfer support.

18. A process according to claim 16, wherein the treatment resulting in said retaining step is at least one of hydrophilia, hydrophobia, roughness, heat treatment, and surface shrinkage.

19. A process according to claim 16, wherein said second face of said non-transferring elements is configured for bonding contact with said reception support, and said retaining step comprises treating said second face of said non-transferring elements to give it a hydrophobic bonding capacity with said reception support, said second face of said transferring element being treated to give it a hydrophilic bonding capacity, said reception support offering a hydrophilic bonding capacity to said face of each element.

20. A process according to claim 16, wherein said second face of said non-transferring elements configured for bonding contact with said reception support, and said retaining step comprises treating the area of said reception support facing said second face of said non-transferring element to give it a hydrophobic bonding capacity, said area of said reception support facing said second face of said transferring element being treated to give it a hydrophilic bonding capacity, all second faces of said elements being treated to provide them with a hydrophilic bonding capacity.

21. A process according to claim 1, wherein said step of separating said transfer support from said reception support results from a mechanical force applied between these supports consisting of a tension force and/or a shear force and/or bending force.

22. A process according to claim 1, wherein said elements comprise electronic components.

23. A process according to claim 1, wherein said electronic components are semiconductor chips.