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Method of making integrated circuit capacitor including tapered plug

  • US 6,204,186 B1
  • Filed: 07/30/1999
  • Issued: 03/20/2001
  • Est. Priority Date: 01/13/1999
  • Status: Expired due to Term
First Claim
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1. A method of making a capacitor comprising the steps of:

  • forming an interconnection line above a substrate;

    depositing a first dielectric layer on the interconnection line;

    etching a via in the first dielectric layer, the via having a tapered width which increases in a direction toward the substrate;

    filling the via with a conductive metal to form a metal plug;

    etching a trench in the first dielectric layer around an upper portion of the metal plug;

    depositing a second dielectric layer adjacent the metal plug; and

    depositing an upper electrode layer on the second dielectric layer.

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