Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures

• US 6,204,192 B1
• Filed: 03/29/1999
• Issued: 03/20/2001
• Est. Priority Date: 03/29/1999
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Zhao, Joe W., Catabay, Wilbur G., Hsia, Wei-Jen
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US09/281,602
• Time in Patent Office: 722 Days
• Field of Search: 134/1.2, 216/18, 216/67, 216/80, 438/720, 438/722, 438/723, 438/740, 438/743
• US Class Current: 438/723
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas

Abstract

A process is provided for removing etch residues from one or more openings formed in one or more layers of a low dielectric constant insulation material over a copper metal interconnect layer of an integrated circuit structure which includes cleaning exposed portions of the surface of the copper interconnect layer at the bottom of the one or more openings, the process comprising providing an anisotropic hydrogen plasma to cause a chemical reaction between ions in the plasma and the etch residues in the bottom of the one or more opening, including copper oxide on the exposed copper surface, to thereby clean the exposed portions of the copper surface, and to remove the etch residues without sputtering the copper at the bottom of the opening.

Claims

1. A process for removing etch residues from at least one opening formed in at least one layer of a low dielectric constant insulation material over a copper metal interconnect layer of an integrated circuit structure being formed on a semiconductor substrate which includes cleaning exposed portions of the surface of said copper interconnect layer at the bottom of said at least one opening, said process comprising providing a plasma to thereby remove said etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on the sidewalls of said at least one opening formed in said at least one layer of said dielectric constant insulation material.

2. The process of claim 1 wherein said step of providing a plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening further comprises providing a plasma capable of cleaning said exposed portions of said copper surface and removing said etch residues without sputtering the copper at the bottom of said at least one opening formed in said at least one layer of said low dielectric constant insulation material.

3. The process of claim 1 wherein said step of providing a plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material further comprises providing a hydrogen plasma.

4. The process of claim 3 wherein said step of providing a hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material further comprises providing an anisotropic hydrogen plasma.

5. The process of claim 4 wherein said step of providing an anisotropic hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material further comprises applying a bias to said substrate to assist said anisotropic hydrogen plasma in reaching the bottom of said at least one opening adjacent said copper surface.

6. The process of claim 1 wherein said step of providing a plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening further comprises causing a chemical reaction to occur between ions in said plasma and said etch residues in the bottom of said at least one opening formed in said at least one layer of said low dielectric constant insulation material.

7. The process of claim 1 wherein said step of providing a plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material is preceded by a step of passivation, wherein said passivation step comprises treating said sidewalls of said at least one opening with a plasma selected from the group consisting of nitrogen plasma, oxygen plasma, and a combination of nitrogen and oxygen plasmas.

8. The process of claim 1 wherein said step of providing a plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material, is preceded by a step of repair, wherein said repair step comprises treating said sidewalls of said at least one opening with a hydrogen plasma, without applying a bias to said substrate.

9. A process for removing etch residues from at least one opening formed in at least one layer of a low dielectric constant insulation material over a copper metal interconnect layer of an integrated circuit structure being formed on a semiconductor substrate which includes cleaning exposed portions of the surface of said copper interconnect layer at the bottom of said at least one opening, said process comprising providing an anisotropic hydrogen plasma to cause a chemical reaction between ions in the plasma and the etch residues in the bottom of said at least one opening, including copper oxide on said exposed copper surface, to thereby clean said exposed portions of said copper surface and to remove said etch residues without sputtering the copper at the bottom of said at least one opening and without causing copper to deposit on the sidewalls of said at least one opening.

10. The process of claim 9 which further includes applying a bias to said substrate to provide said anisotropic hydrogen plasma which reaches to the bottom of said at least one opening formed in said at least one layer of said low dielectric constant insulation material adjacent said copper surface.

11. The process of claim 9 wherein said step of providing an anisotropic hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material is preceded by a step of passivation, wherein said passivation step comprises treating said sidewalls of said at least one opening with a plasma selected from the group consisting of nitrogen plasma, oxygen plasma, and a combination of nitrogen and oxygen plasmas.

12. The process of claim 9 wherein said step of providing an anisotropic hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material is preceded by a step of repair, wherein said repair step comprises treating said sidewalls of said at least one opening with a hydrogen plasma, without applying a bias to said substrate.

13. A process for removing etch residues from at least one opening formed in at least one layer of a low dielectric constant insulation material over a copper metal interconnect layer of an integrated circuit structure substrate which includes cleaning exposed portions of the surface of said copper interconnect layer at the bottom of said at least one opening formed in said at least one layer of said low dielectric constant insulation material, said process comprising:

a) providing an anisotropic hydrogen plasma to cause a chemical reaction between ions in the plasma and the etch residues in the bottom of said at least one opening formed in said at least one layer of said low dielectric constant insulation material, including copper oxide on said exposed copper surface, to thereby clean said exposed portions of said copper surface and to remove said etch residues without sputtering the copper at the bottom of said at least one opening, and without causing copper to deposit on the sidewalls of said at least one opening; and

b) applying a negative bias, ranging from about −

200 volts to about −

400 volts, to said substrate to urge said anisotropic hydrogen plasma to reach the bottom of said at least one opening adjacent said copper surface.

14. The process of claim 13 wherein said step of providing an anisotropic hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material, is preceded by a step of passivation, wherein said passivation step comprises treating said sidewalls of said at least one opening with a plasma selected from the group consisting of nitrogen plasma, oxygen plasma, and a combination of nitrogen and oxygen plasmas.

15. The process of claim 13 wherein said step of providing an anisotropic hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material, is preceded by a step of repair, wherein said repair step comprises treating said sidewalls of said at least one opening with a hydrogen plasma, without applying a bias to said substrate.

16. The process of claim 13 wherein said step of providing an anisotropic hydrogen plasma to thereby remove etch residues and to clean said exposed portions of said copper surface without causing copper to deposit on said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material, is followed by a step of physical vapor deposition to form a via liner on at least said sidewalls of said at least one opening.

17. The process of claim 16 wherein said step of physical vapor deposition to form a via liner on at least said sidewalls of said at least one opening formed in said at least one layer of said low dielectric constant insulation material further comprises depositing tantalum on at least said sidewalls of said at least one opening.