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Vertical trench-gated power MOSFET having stripe geometry and high cell density

  • US 6,204,533 B1
  • Filed: 06/02/1998
  • Issued: 03/20/2001
  • Est. Priority Date: 06/02/1995
  • Status: Expired due to Term
First Claim
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1. A power MOSFET formed in a semiconductor chip, said MOSFET comprising:

  • at least one MOSFET cell, said cell being formed in the shape of a longitudinal stripe having a length and a width, said stripe being located between opposing gate sections and having a top surface coincident with a surface of said chip, each of said gate sections being formed in a trench, said MOSFET cell comprising;

    a source region of a first conductivity type located adjacent a portion of said top surface;

    a body region of a second conductivity type located beneath said source region, said body region containing a channel region adjacent a wall of said trench;

    a drain region of said first conductivity type adjoining said body region; and

    a heavily-doped region within said body region, said heavily-doped region being of said second conductivity type and having a dopant concentration greater than a dopant concentration of a remainder of said body region, said heavily-doped region extending along said length of said cell and including at least one contact portion which extends to said surface of said cell.

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