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SOI MOS field effect transistor

  • US 6,204,534 B1
  • Filed: 12/03/1997
  • Issued: 03/20/2001
  • Est. Priority Date: 01/20/1997
  • Status: Expired due to Fees
First Claim
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1. A SOI MOS field effect transistor comprising:

  • a semiconductor layer formed on an insulating substrate;

    source and drain regions of a first conductivity type arranged apart from each other on the semiconductor layer;

    a first channel region of a second conductivity type, a floating region of the first conductivity type, and a second channel region of the second conductivity type formed in this order in a self-aligned manner and disposed between the source region and the drain region; and

    two gate electrodes for controlling the first and second channel regions, wherein an impurity concentration of the second channel region adjacent to the drain region is lower than an impurity concentration of the first channel region adjacent to the source region.

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