SOI MOS field effect transistor
First Claim
1. A SOI MOS field effect transistor comprising:
- a semiconductor layer formed on an insulating substrate;
source and drain regions of a first conductivity type arranged apart from each other on the semiconductor layer;
a first channel region of a second conductivity type, a floating region of the first conductivity type, and a second channel region of the second conductivity type formed in this order in a self-aligned manner and disposed between the source region and the drain region; and
two gate electrodes for controlling the first and second channel regions, wherein an impurity concentration of the second channel region adjacent to the drain region is lower than an impurity concentration of the first channel region adjacent to the source region.
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Accused Products
Abstract
A SOI MOS field effect transistor includes: a superficial top semiconductor layer of a first conductivity type formed on a SOI substrate; source and drain regions of a second conductivity type arranged apart from each other on the top semiconductor layer; a P-type first channel region, an N+-type floating region, and a P-type second channel region formed in this order in a self-aligned manner and disposed between the N+-type source region and the N+-type drain region for an N-type MOSFET, or an N-type first channel region, a P+-type floating region, and an N-type second channel region formed in this order in a self-aligned manner and disposed between the P+-type source region and the P+-type drain region for a P-type MOSFET; and two gate electrodes for controlling the first and second channel regions, wherein a doping concentration of the second channel region adjacent to the drain region is lower than a doping concentration of the first channel region adjacent to the source region.
51 Citations
9 Claims
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1. A SOI MOS field effect transistor comprising:
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a semiconductor layer formed on an insulating substrate;
source and drain regions of a first conductivity type arranged apart from each other on the semiconductor layer;
a first channel region of a second conductivity type, a floating region of the first conductivity type, and a second channel region of the second conductivity type formed in this order in a self-aligned manner and disposed between the source region and the drain region; and
two gate electrodes for controlling the first and second channel regions, wherein an impurity concentration of the second channel region adjacent to the drain region is lower than an impurity concentration of the first channel region adjacent to the source region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A SOI MOS field effect transistor comprising:
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a semiconductor layer formed on an insulating substrate;
source and drain regions of a first conductivity type arranged apart from each other on the semiconductor layer;
a first channel region, a floating region of the first conductivity type, and a second channel region formed in this order in a self-aligned manner and disposed between the source region and the drain region; and
two gate electrodes for controlling the first and second channel regions, wherein the first channel region adjacent to the source region is a channel region of a second conductivity type and the second channel region adjacent to the drain region comprises an undoped channel of intrinsic-type.
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Specification