Cluster tool apparatus using plasma immersion ion implantation

• US 6,207,005 B1
• Filed: 07/28/1998
• Issued: 03/27/2001
• Est. Priority Date: 07/29/1997
• Status: Expired due to Term

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Cheung, Nathan
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/124,161
• Time in Patent Office: 973 Days
• Field of Search: 118/719, 118/723.E, 156/345, 204/298.25, 204/298.35
• US Class Current: 156/345.32
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: C23C 14/56 Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32743 for introducing the material into processing chamber
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67173 in-line arrangement
• CPC Class Codes: H01L 21/67213 comprising at least one ion or electron beam chamber coating by ion implantation C23C; ion or electron beam tubes H01J37/00

Abstract

A cluster tool assembly 10, 200, 300 using plasma immersion ion implantation chamber. In some embodiments, the cluster tool assembly also includes a controlled cleaving process chamber, as well as others.

Claims

1. An apparatus for processing substrates, said apparatus comprising:

a transfer chamber comprising a robot therein;

a plasma immersion ion implantation chamber (“

PIII”

) coupled to said transfer chamber;

a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving action, the CCP chamber adapted to provide energy from a thermal source or sink, a mechanical source, a chemical source, or an electrical source, and

at least a third chamber coupled to said transfer chamber, whereby the transfer chamber permits a plurality of process steps on a plurality of wafers in the other chambers without breaking vacuum.

2. Apparatus of claim 1 wherein said second chamber is selected from a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, an epitaxial deposition chamber, and a plasma treatment chamber.

3. Apparatus of claim 1 wherein said apparatus is a cluster tool.

4. Apparatus of claim 1 wherein said PIII chamber includes multiple sources.

5. Apparatus of claim 1 wherein said PIII chamber is adopted to introduce particles through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth.

6. Apparatus of claim 1 wherein said PIII chamber is coupled to a source, said source is selected from hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles.

7. Apparatus of claim 1 wherein said chemical source is selected from particles, fluids, gases, or liquids.

8. Apparatus of claim 1 wherein said chemical source provides a chemical reaction.

9. Apparatus of claim 1 wherein said chemical source is flood, time-varying, spatially varying, or continuous.

10. Apparatus of claim 1 wherein said mechanical source is selected from a rotational source, translational source, compressional source, expansional source, or ultrasonic source.

11. Apparatus of claim 1 wherein said mechanical source is selected from flood, time-varying, spatially varying, or continuous.

12. Apparatus of claim 1 wherein electrical source is selected from an applied voltage or an applied electro-magnetic field.

13. Apparatus of claim 1 wherein said electrical source is flood, time-varying, spatially varying, or continuous.

14. Apparatus of claim 1 wherein said thermal source or sink is selected from radiation, convection, or conduction.

15. Apparatus of claim 1 wherein said thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electro/magnetic field, a gas jet, an electron beam, a thermo-electric heating, and a furnace.

16. Apparatus of claim 1 wherein said thermal sink is selected from a fluid jet, a liquid jet, a gas jet, a cryogenic fluid, a super-cooled liquid, a thermo-electric cooling means, and an electro/magnetic field.

17. Apparatus of claim 1 wherein said thermal source or sink is selected from flood, time-varying, spatially varying, or continuous.

18. Apparatus of claim 1 further comprising a third chamber coupled to said transfer chamber, said third chamber being selected from a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, an epitaxial deposition chamber, and a plasma treatment chamber.