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Electron beam process during dual damascene processing

  • US 6,207,555 B1
  • Filed: 03/17/1999
  • Issued: 03/27/2001
  • Est. Priority Date: 03/17/1999
  • Status: Expired due to Term
First Claim
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1. A process for producing a microelectronic device which comprises:

  • (a) applying a dielectric layer onto a substrate;

    (b) overall exposing the dielectric layer to electron beam irradiation under conditions sufficient to cure an upper portion of the dielectric layer and render the upper portion a polish stop layer while not substantially curing a lower portion of the dielectric layer;

    (c) imagewise patterning the dielectric layer to form vias in the dielectric layer extending to the substrate;

    (d) depositing a metal into the vias and onto a top surface of the dielectric layer;

    (e) removing the metal from the top surface of the dielectric layer.

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