Local interconnect etch characterization using AFM
First Claim
1. A method of processing a wafer including characterizing a local interconnect etch as acceptable or unacceptable, comprising:
- etching a portion of a wafer comprising at least one device thereon to form a local interconnect etched portion on the wafer;
scanning the local interconnect etched portion of the wafer with an atomic force microscope;
generating surface profile data including sidewall profile data of the local interconnect etched portion from the atomic force microscope;
evaluating the surface profile data to determine whether the surface profile data indicates the presence of a trenching phenomenon and etching through an etch stop layer; and
further processing of the wafer if both the trenching phenomenon and the etching through an etch stop layer are not present or reprocessing or discarding the wafer if either the trenching phenomenon or the etching through an etch stop layer are present.
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Accused Products
Abstract
In one embodiment, the present invention relates to a method of processing a wafer including characterizing a local interconnect etch, involving the steps of etching a portion a wafer comprising at least one device thereon to form a local interconnect etched portion on the wafer, scanning the local interconnect etched portion of the wafer with an atomic force microscope having a flared probing tip, generating surface profile data of the local interconnect etched portion from the atomic force microscope, and characterizing the surface profile data. In another embodiment, the present invention relates to a method of determining whether or not a trenching phenomenon exists after performing a local interconnect etch, involving the steps of scanning a local interconnect etched portion of a wafer with an atomic force microscope having a flared probing tip, generating surface profile data of the local interconnect etched portion from the atomic force microscope, and assessing whether the surface profile data indicates that the trenching phenomenon exists within the local interconnect etched portion.
16 Citations
19 Claims
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1. A method of processing a wafer including characterizing a local interconnect etch as acceptable or unacceptable, comprising:
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etching a portion of a wafer comprising at least one device thereon to form a local interconnect etched portion on the wafer;
scanning the local interconnect etched portion of the wafer with an atomic force microscope;
generating surface profile data including sidewall profile data of the local interconnect etched portion from the atomic force microscope;
evaluating the surface profile data to determine whether the surface profile data indicates the presence of a trenching phenomenon and etching through an etch stop layer; and
further processing of the wafer if both the trenching phenomenon and the etching through an etch stop layer are not present or reprocessing or discarding the wafer if either the trenching phenomenon or the etching through an etch stop layer are present. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
determining whether or not a trenching phenomenon exists; and
calculating corner selectivity.
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9. The method of processing a semiconductor including characterizing a local interconnect etch according to claim 1, wherein the etching step is an oxide etching step.
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10. The method of processing a semiconductor including characterizing a local interconnect etch according to claim 1, wherein the etching step is a nitride etching step.
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11. The method of processing a semiconductor including characterizing a local interconnect etch according to claim 1, wherein the atomic force microscope employs a probing tip having a flared end.
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12. A method of determining presence of a trenching phenomenon after performing a local interconnect etch, comprising:
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scanning a local interconnect etched portion of a wafer with an atomic force microscope having a flared probing tip;
generating surface profile data including sidewall profile data of the local interconnect etched portion from the atomic force microscope; and
evaluating the generated surface profile data including sidewall profile data of the local interconnect etched portion to determine whether the surface profile data indicates the presence of the trenching phenomenon within the local interconnect etched portion, and further processing the wafer if the trenching phenomenon is not present or reprocessing or discarding the wafer if the trenching phenomenon is present. - View Dependent Claims (13, 14, 15, 16)
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17. A method of determining a value of poly gate corner selectivity after performing a local interconnect oxide etch and nitride etch on a wafer, comprising:
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scanning a local interconnect etched portion of the wafer with an atomic force microscope having a flared probing tip;
generating surface profile data including sidewall profile data of the local interconnect etched portion from the atomic force microscope;
calculating the value of corner selectivity S based on equations
wherein - View Dependent Claims (18, 19)
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Specification