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Oxide/nitride stacked gate dielectric and associated methods

  • US 6,207,586 B1
  • Filed: 06/17/1999
  • Issued: 03/27/2001
  • Est. Priority Date: 10/28/1998
  • Status: Expired due to Fees
First Claim
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1. A method of making a dielectric layer for a semiconductor device, the method comprising the steps of:

  • forming an oxide layer on a semiconductor substrate; and

    forming a defective nitride layer on the oxide layer using direct plasma enhanced chemical vapor deposition so that the defective nitride layer is permeable to oxygen, the defective nitride layer being formed while exposing the plasma with a magnetic field for providing a uniform energy distribution across a surface of the oxide layer.

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