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One-time programmable poly-fuse circuit for implementing non-volatile functions in a standard sub 0.35 micron CMOS

  • US 6,208,549 B1
  • Filed: 02/24/2000
  • Issued: 03/27/2001
  • Est. Priority Date: 02/24/2000
  • Status: Expired due to Term
First Claim
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1. A non-volatile memory system comprising:

  • a plurality of memory circuits, wherein each of the memory circuits includes;

    a sense amplifier circuit that includes a polycide fuse element;

    a first access transistor for enabling the sense amplifier circuit, the first access transistor being connected in series with the polycide fuse element; and

    a second access transistor for applying a programming voltage to the polycide fuse element, the second access transistor being connected in series with the polycide fuse element; and

    a decoder circuit coupled to the first access transistor in each of the memory circuits, wherein the decoder circuit is configured to selectively enable one of the first access transistors in response to an address signal.

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