Determination of scanning error in scanner by reticle rotation

• US 6,208,747 B1
• Filed: 12/01/1998
• Issued: 03/27/2001
• Est. Priority Date: 12/01/1998
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Levinson, Harry, Nguyen, Khanh B.
• Primary Examiner(s): Bella, Matthew C.
• Assistant Examiner(s): Choobin, M.
• Application Number:
  US09/203,240
• Time in Patent Office: 847 Days
• Field of Search: 355/53, 355/67, 355/69, 382/100, 382/144, 430/5, 430/394, 430/395, 623/11, 438/107
• US Class Current: 382/100
• CPC Class Codes: G03F 7/70358 Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A method (300) of characterizing a lithographic scanning system includes the steps of printing a first pattern (302) using a reticle (220) having a first orientation with respect to the lithographic scanning system and measuring a critical dimension of the first pattern at a plurality of points (310). The method (300) further includes printing a second pattern (320) using the reticle (220) having a second orientation with respect to the lithographic scanning system different than the first orientation and measuring a critical dimension of the second pattern at the plurality of points (322). The measured critical dimension data is then used to determine a reticle critical dimension component and a non-reticle critical dimension component of the patterns at the plurality of points (324) and a scanning system critical dimension component of the patterns is then determined using the non-reticle critical dimension component data along a plurality of points corresponding to a scanning direction of the lithographic scanning system (326).

Claims

1. A method of characterizing a lithographic scanning system, comprising the steps of:

printing a first pattern using a reticle having a first orientation with respect to the lithographic scanning system;

measuring a critical dimension of the first pattern at a plurality of points;

printing a second pattern using the reticle having a second orientation with respect to the lithographic scanning system different than the first orientation;

measuring a critical dimension of the second pattern at the plurality of points;

measuring a critical dimension on the reticle at a plurality of points corresponding to the plurality of points of the first and second patterns;

determining a reticle critical dimension component and a non-reticle critical dimension component of the patterns at the plurality of points; and

determining a scanning system critical dimension component of the patterns using the non-reticle critical dimension component data along a plurality of points corresponding to a scanning direction of the lithographic scanning system.

2. The method of claim 1, wherein the second orientation of the reticle is rotated 180 degrees from the first orientation.

3. The method of claim 1, wherein printing the first and second patterns comprises illuminating the reticle with ultraviolet radiation and transferring the reticle pattern to a substrate through an imaging system as the reticle and the substrate are scanned past a slit in the imaging system.

4. The method of claim 1, wherein measuring the critical dimension of the first and second patterns comprises measuring at least one of a width or length dimension of the first and second patterns using a scanning electron microscope or an optical microscope.

5. The method of claim 1, wherein measuring the critical dimension of the first and second patterns comprises:

forcing a current through the first and second patterns;

measuring a voltage across at least a portion of the first and second patterns; and

calculating a resistance of the first and second patterns using the forced current and the measured voltage, wherein the resistance is related to the critical dimension of the first and second patterns.

7. The method of claim 1, wherein determining a scanning system critical dimension component comprises calculating a standard deviation of the non-reticle critical dimension components of the points along the scanning direction.

8. The method of claim 1, wherein the first and second patterns are rotationally symmetric with respect to one another, thereby ensuring that approximately the same pattern is being measured at the plurality of points.

6. A method of characterizing a lithographic scanning system, comprising the steps of:

printing a first pattern using a reticle having a first orientation with respect to the lithographic scanning system;

measuring a critical dimension of the first pattern at a plurality of points;

printing a second pattern using the reticle having a second orientation with respect to the lithographic scanning system different than the first orientation;

measuring a critical dimension of the second pattern at the plurality of points;

measuring a critical dimension on the reticle at a plurality of points corresponding to the plurality of points of the first and second patterns;

determining a reticle critical dimension component and a non-reticle critical dimension component of the patterns at the plurality of points;

wherein determining a non-reticle critical dimension component comprises;

(a) creating four equations with four unknowns using the measured critical dimension data as follows;

9. A method of identifying components that make up a critical dimension of a feature in a lithographic scanning system, comprising the steps of:

printing a first pattern onto a substrate using a reticle having a first orientation with respect to the lithographic scanning system, wherein the reticle contains features thereon which are rotationally symmetric about a specified angle of rotation;

measuring a critical dimension of the first pattern at a first plurality of points across the substrate;

rotating the reticle to a second orientation with respect to the lithographic scanning system different than the first orientation, wherein an angle between the first and second orientation is equal to the specified angle;

printing a second pattern onto another substrate using the reticle at the second orientation;

measuring a critical dimension of the second pattern at a second plurality of points across the another substrate, wherein the first and second plurality of points positionally correspond to one another;

measuring a critical dimension on the reticle at a plurality of points corresponding to one of the first and second plurality of points;

determining a reticle critical dimension component and a non-reticle critical dimension component at the first and second plurality of points using the measured critical dimension data at the first and second plurality of points; and

determining a scanning system critical dimension using the non-reticle critical dimension component along a plurality of points corresponding to a scanning direction of the lithographic scanning system.