Method and apparatus for performing error correction on data read from a multistate memory

• US 6,209,113 B1
• Filed: 09/01/1998
• Issued: 03/27/2001
• Est. Priority Date: 10/18/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Roohparvar, Frankie F.
• Primary Examiner(s): Baker, Stephen M.
• Application Number:
  US09/144,546
• Time in Patent Office: 938 Days
• Field of Search: 371/40.18, 365/185.03, 365/45, 365/185.09, 714/767, 714/773
• US Class Current: 714/773
• CPC Class Codes: G06F 11/1072 in multilevel memories
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 29/00 Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Abstract

A method and apparatus for performing error correction on data read from a multistate memory are disclosed. According to one embodiment of the present invention a cell in a memory device is read to generate a read voltage determined by a state of the cell and one of an ordered succession of encoded signals is selected based on the read voltage, where each encoded signal corresponds to a field of bits and adjacent encoded signals correspond to respective fields of bits that are different only in a single bit. The selected encoded signal is decoded to generate a field of uncorrected bits and a field of syndrome bits indicating any error in the uncorrected bits. The syndrome bits are decoded to generate correction bits to correct the error, and the uncorrected bits are combined with the correction bits to generate a field of corrected bits.

Claims

1. A method of operating a multistate memory cell, the cell having one of 4 states, the method comprising:

reading the cell to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

encoding the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, and E₄, each of the encoded signals representing a unique ordered set of binary bits; and

performing error detection and correction on the encoded signal to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

2. The method of claim 1 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 1.2 volts, L₂ is approximately 1.25 volts, H₂ is approximately 2.45 volts, L₃ is approximately 2.5 volts, H₃ is approximately 3.7 volts, L₄ is approximately 3.75 volts, and H₄ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, and E₄ represent, respectively, 00, 01, 11, and 10;

reading the cell further comprises;

selecting the cell from a plurality of multistate flash memory cells in an array;

sensing a current in the cell indicative of the state of the cell that is represented by a charge stored on a floating gate of the cell; and

converting the current into the voltage signal;

encoding the voltage signal further comprises;

comparing the voltage signal with a plurality of reference voltages to generate a plurality of reference signals; and

converting the reference signals into the encoded signal; and

performing error detection and correction comprises;

decoding the encoded signal and other encoded signals to generate a field of uncorrected bits and fields of syndrome bits;

decoding the syndrome bits to identify bits in the field of uncorrected bits that are in error;

indicating non-correctable errors if two bits in the field of uncorrected bits are in error;

generating a correction bit to correct a bit in error; and

combining the field of uncorrected bits with the correction bit to generate a field of corrected bits.

3. A method of operating a multistate memory cell, the cell having one of 4 states, the method comprising:

reading the cell to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

encoding the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, and E₄, each of the encoded signals representing a unique ordered set of binary bits and adjacent ones of the encoded signals being different in only a single bit; and

performing error detection and correction on the encoded signal to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

4. The method of claim 3 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 1.2 volts, L₂ is approximately 1.25 volts, H₂ is approximately 2.45 volts, L₃ is approximately 2.5 volts, H₃ is approximately 3.7 volts, L₄ is approximately 3.75 volts, and H₄ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, and E₄ represent, respectively, 00, 01, 11, and 10;

reading the cell further comprises;

selecting the cell from a plurality of multistate flash memory cells in an array;

sensing a current in the cell indicative of the state of the cell that is represented by a charge stored on a floating gate of the cell; and

converting the current into the voltage signal;

encoding the voltage signal further comprises;

comparing the voltage signal with a plurality of reference voltages to generate a plurality of reference signals; and

converting the reference signals into the encoded signal; and

performing error detection and correction comprises;

decoding the encoded signal and other encoded signals to generate a field of uncorrected bits and fields of syndrome bits;

decoding the syndrome bits to identify bits in the field of uncorrected bits that are in error;

indicating non-correctable errors if two bits in the field of uncorrected bits are in error;

generating a correction bit to correct a bit in error; and

combining the field of uncorrected bits with the correction bit to generate a field of corrected bits.

5. A method of operating a multistate memory cell, the cell having one of 4 states, the method comprising:

reading the cell to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

converting the voltage signal into a field of bits; and

performing error detection and correction on the field of bits to detect errors in the field of bits and to correct correctable errors in the field of bits.

6. The method of claim 5 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 1.2 volts, L₂ is approximately 1.25 volts, H₂ is approximately 2.45 volts, L₃ is approximately 2.5 volts, H₃ is approximately 3.7 volts, L₄ is approximately 3.75 volts, and H₄ is approximately 5.0 volts;

reading the cell further comprises;

selecting the cell from a plurality of multistate flash memory cells in an array;

sensing a current in the cell indicative of the state of the cell that is represented by a charge stored on a floating gate of the cell; and

converting the current into the voltage signal;

converting the voltage signal further comprises;

comparing the voltage signal with a plurality of reference voltages to generate a plurality of reference signals; and

converting the reference signals into the field of bits; and

performing error detection and correction comprises;

decoding the field of bits and other fields of bits to generate a field of uncorrected bits and fields of syndrome bits;

decoding the syndrome bits to identify bits in the field of uncorrected bits that are in error;

indicating non-correctable errors if two bits in the field of uncorrected bits are in error;

generating a correction bit to correct a bit in error; and

combining the field of uncorrected bits with the correction bit to generate a field of corrected bits.

7. A memory system comprising:

an array of memory cells wherein each of the cells has one of 4 states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

an encoding circuit coupled to the read circuit to encode the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, and E₄, each of the encoded signals representing a unique ordered set of binary bits; and

an error detection and correction circuit coupled to the encoding circuit to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

8. The memory system of claim 7, wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 1.2 volts, L₂ is approximately 1.25 volts, H₂ is approximately 2.45 volts, L₃ is approximately 2.5 volts, H₃ is approximately 3.7 volts, L₄ is approximately 3.75 volts, and H₄ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, and E₄, represent, respectively, 00, 01, 11, and 01;

the memory system comprises an integrated circuit memory system;

each of the cells comprises a multistate flash memory cell;

the read circuit comprises a sense amplifier circuit to convert a current in the cell into the voltage signal;

the encoding circuit comprises;

three comparator circuits, each comparator circuit coupled between the sense amplifier circuit and a reference voltage to receive the voltage signal and to compare the voltage signal with the reference voltage to generate a reference signal; and

a logic circuit coupled to receive the references signals and to generate the encoded signal;

the error detection and correction circuit comprises;

an ECC decoder circuit coupled to the logic circuit to receive the encoded signal and other encoded signals, to assert the encoded signal representing data bits, and to generate syndrome bits from the other encoded signals representing ECC check bits;

a syndrome decoder circuit coupled to receive and decode the syndrome bits, to generate correction bits based on the syndrome bits, and to assert a failure signal if the syndrome bits indicate an error in more than one of the data bits represented by the encoded signal; and

a correction circuit coupled to receive the data bits represented by the encoded signal and the correction bits, to replace one of the data bits that is in error based on the correction bits, and to generate corrected bits.

9. A memory system comprising:

an array of memory cells wherein each of the cells has one of 4 states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

an encoding circuit coupled to the read circuit to encode the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, and E₄, each of the encoded signals representing a unique ordered set of binary bits and adjacent ones of the encoded signals being different in only a single bit; and

an error detection and correction circuit coupled to the encoding circuit to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

10. The memory system of claim 9 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 1.2 volts, L₂ is approximately 1.25 volts, H₂ is approximately 2.45 volts, L₃ is approximately 2.5 volts, H₃ is approximately 3.7 volts, L₄ is approximately 3.75 volts, and H₄ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, and E₄, represent, respectively, 00, 01, 11, and 01;

the memory system comprises an integrated circuit memory system;

each of the cells comprises a multistate flash memory cell;

the read circuit comprises a sense amplifier circuit to convert a current in the cell into the voltage signal;

the encoding circuit comprises;

three comparator circuits, each comparator circuit coupled between the sense amplifier circuit and a reference voltage to receive the voltage signal and to compare the voltage signal with the reference voltage to generate a reference signal; and

a logic circuit coupled to receive the reference signals and to generate the encoded signal;

the error detection and correction circuit comprises;

an ECC decoder circuit coupled to the logic circuit to receive the encoded signal and other encoded signals, to assert the encoded signal representing data bits, and to generate syndrome bits from the other encoded signals representing ECC check bits;

a syndrome decoder circuit coupled to receive and decode the syndrome bits, to generate correction bits based on the syndrome bits, and to assert a failure signal if the syndrome bits indicate an error in more than one of the data bits represented by the encoded signal; and

a correction circuit coupled to receive the data bits represented by the encoded signal and the correction bits, to replace one of the data bits that is in error based on the correction bits, and to generate corrected bits.

11. A memory system comprising:

an array of memory cells wherein each of the cells has one of 4 states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

an encoding circuit coupled to the read circuit to encode the voltage signal into a field of bits; and

an error detection and correction circuit coupled to the encoding circuit to detect errors in the field of bits and to correct correctable errors in the field of bits.

12. The memory system of claim 11 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 1.2 volts, L₂ is approximately 1.25 volts, H₂ is approximately 2.45 volts, L₃ is approximately 2.5 volts, H₃ is approximately 3.7 volts, L₄ is approximately 3.75 volts, and H₄ is approximately 5.0 volts;

the memory system comprises an integrated circuit memory system;

each of the cells comprises a multistate flash memory cell;

the read circuit comprises a sense amplifier circuit to convert a current in the cell into the voltage signal;

the encoding circuit comprises;

three comparator circuits, each comparator circuit coupled between the sense amplifier circuit and a reference voltage to receive the voltage signal and to compare the voltage signal with the reference voltage to generate a reference signal; and

a logic circuit coupled to receive the reference signals and to generate the field of bits;

the error detection and correction circuit comprises;

an ECC decoder circuit coupled to the logic circuit to receive the field of bits and other fields of bits, to assert bits from the field of bits representing data bits, and to generate syndrome bits from bits from the other fields of bits representing ECC check bits;

a syndrome decoder circuit coupled to receive and decode the syndrome bits, to generate correction bits based on the syndrome bits, and to assert a failure signal if the syndrome bits indicate an error in more than one of the bits from the field of bits representing data bits; and

a correction circuit coupled to receive the bits representing data bits and the correction bits, to replace a bit that is in error based on the correction bits, and to generate corrected bits.

13. A method of operating a multistate memory cell, the cell having one of 8 states, the method comprising:

reading the cell to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 8, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 12 percent of X volts, L₂ is approximately 12.2 percent of X volts, H₂ is approximately 24 percent of X volts, L₃ is approximately 24.2 percent of X volts, H₃ is approximately 36 percent of X volts, L₄ is approximately 36.2 percent of X volts, H₄ is approximately 48 percent of X volts, L₅ is approximately 48.2 percent of X volts, H₅ is approximately 60 percent of X volts, L₆ is approximately 60.2 percent of X volts, H₆ is approximately 72 percent of X volts, L₇ is approximately 72.2 percent of X volts, H₇ is approximately 84 percent of X volts, L₈ is approximately 84.2 percent of X volts, and H₈ is approximately 100 percent of X volts;

encoding the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈, each of the encoded signals representing a unique ordered set of binary bits; and

performing error detection and correction on the encoded signal to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

14. The method of claim 13 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 0.6 volts, L₂ is approximately 0.61 volts, H₂ is approximately 1.2 volts, L₃ is approximately 1.21 volts, H₃ is approximately 1.8 volts, L₄ is approximately 1.81 volts, H₄ is approximately 2.4 volts, L₅ is approximately 2.41 volts, H₅ is approximately 3.0 volts, L₆ is approximately 3.01 volts, H₆ is approximately 3.6 volts, L₇ is approximately 3.61 volts, H₇ is approximately 4.2 volts, L₈ is approximately 4.21 volts, and H₈ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈ represent, respectively, 000, 001, 011, 010, 110, 111, 101, and 100 or 000, 100, 101, 001, 011, 111, 110, and 010;

reading the cell further comprises;

selecting the cell from a plurality of multistate flash memory cells in an array;

sensing a current in the cell indicative of the state of the cell that is represented by a charge stored on a floating gate of the cell; and

converting the current into the voltage signal;

encoding the voltage signal further comprises;

comparing the voltage signal with a plurality of reference voltages to generate a plurality of reference signals; and

converting the reference signals into the encoded signal; and

performing error detection and correction comprises;

decoding the encoded signal and other encoded signals to generate a field of uncorrected bits and fields of syndrome bits;

decoding the syndrome bits to identify bits in the field of uncorrected bits that are in error;

indicating non-correctable errors if two bits in the field of uncorrected bits are in error;

generating a correction bit to correct a bit in error; and

combining the field of uncorrected bits with the correction bit to generate a field of corrected bits.

15. A method of operating a multistate memory cell, the cell having one of 8 states, the method comprising:

reading the cell to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 8, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 12 percent of X volts, L₂ is approximately 12.2 percent of X volts, H₂ is approximately 24 percent of X volts, L₃ is approximately 24.2 percent of X volts, H₃ is approximately 36 percent of X volts, L₄ is approximately 36.2 percent of X volts, H₄ is approximately 48 percent of X volts, L₅ is approximately 48.2 percent of X volts, H₅ is approximately 60 percent of X volts, L₆ is approximately 60.2 percent of X volts, H₆ is approximately 72 percent of X volts, L₇ is approximately 72.2 percent of X volts, H₇ is approximately 84 percent of X volts, L₈ is approximately 84.2 percent of X volts, and H₈ is approximately 100 percent of X volts;

encoding the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈, each of the encoded signals representing a unique ordered set of binary bits and adjacent ones of the encoded signals being different in only a single bit; and

performing error detection and correction on the encoded signal to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

16. The method of claim 15 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 0.6 volts, L₂ is approximately 0.61 volts, H₂ is approximately 1.2 volts, L₃ is approximately 1.21 volts, H₃ is approximately 1.8 volts, L₄ is approximately 1.81 volts, H₄ is approximately 2.4 volts, L₅ is approximately 2.41 volts, H₅ is approximately 3.0 volts, L₆ is approximately 3.01 volts, H₆ is approximately 3.6 volts, L₇ is approximately 3.61 volts, H₇ is approximately 4.2 volts, L₈ is approximately 4.21 volts, and H₈ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, E₄,E₅, E₆, E₇, and E₈ represent, respectively, 000, 001, 011, 010, 110, 111, 101, and 100 or 000, 100, 101, 001, 011, 111, 110, and 010;

reading the cell further comprises;

selecting the cell from a plurality of multistate flash memory cells in an array;

sensing a current in the cell indicative of the state of the cell that is represented by a charge stored on a floating gate of the cell; and

converting the current into the voltage signal;

encoding the voltage signal further comprises;

comparing the voltage signal with a plurality of reference voltages to generate a plurality of reference signals; and

converting the reference signals into the encoded signal; and

performing error detection and correction comprises;

decoding the encoded signal and other encoded signals to generate a field of uncorrected bits and fields of syndrome bits;

decoding the syndrome bits to identify bits in the field of uncorrected bits that are in error;

indicating non-correctable errors if two bits in the field of uncorrected bits are in error;

generating a correction bit to correct a bit in error; and

combining the field of uncorrected bits with the correction bit to generate a field of corrected bits.

17. A method of operating a multistate memory cell, the cell having one of 8 states, the method comprising:

reading the cell to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 8, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 12 percent of X volts, L₂ is approximately 12.2 percent of X volts, H₂ is approximately 24 percent of X volts, L₃ is approximately 24.2 percent of X volts, H₃ is approximately 36 percent of X volts, L₄ is approximately 36.2 percent of X volts, H₄ is approximately 48 percent of X volts, L₅ is approximately 48.2 percent of X volts, H₅ is approximately 60 percent of X volts, L₆ is approximately 60.2 percent of X volts, H₆ is approximately 72 percent of X volts, L₇ is approximately 72.2 percent of X volts, H₇ is approximately 84 percent of X volts, L₈ is approximately 84.2 percent of X volts, and H₈ is approximately 100 percent of X volts;

converting the voltage signal into a field of bits; and

performing error detection and correction on the field of bits to detect errors in the field of bits and to correct correctable errors in the field of bits.

18. The method of claim 17 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 0.6 volts, L₂ is approximately 0.61 volts, H₂ is approximately 1.2 volts, L₃ is approximately 1.21 volts, H₃ is approximately 1.8 volts, L₄ is approximately 1.81 volts, H₄ is approximately 2.4 volts, L₅ is approximately 2.41 volts, H₅ is approximately 3.0 volts, L₆ is approximately 3.01 volts, H₆ is approximately 3.6 volts, L₇ is approximately 3.61 volts, H₇ is approximately 4.2 volts, L₈ is approximately 4.21 volts, and H₈ is approximately 5.0 volts;

reading the cell further comprises;

selecting the cell from a plurality of multistate flash memory cells in an array;

sensing a current in the cell indicative of the state of the cell that is represented by a charge stored on a floating gate of the cell; and

converting the current into the voltage signal;

converting the voltage signal further comprises;

comparing the voltage signal with a plurality of reference voltages to generate a plurality of reference signals; and

converting the reference signals into the field of bits; and

performing error detection and correction comprises;

decoding the field of bits and other fields of bits to generate a field of uncorrected bits and fields of syndrome bits;

decoding the syndrome bits to identify bits in the field of uncorrected bits that are in error;

indicating non-correctable errors if two bits in the field of uncorrected bits are in error;

generating a correction bit to correct a bit in error; and

combining the field of uncorrected bits with the correction bit to generate a field of corrected bits.

19. A memory system comprising:

an array of memory cells wherein each of the cells has one of 8 states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 8, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 12 percent of X volts, L₂ is approximately 12.2 percent of X volts, H₂ is approximately 24 percent of X volts, L₃ is approximately 24.2 percent of X volts, H₃ is approximately 36 percent of X volts, L₄ is approximately 36.2 percent of X volts, H₄ is approximately 48 percent of X volts, L₅ is approximately 48.2 percent of X volts, H₅ is approximately 60 percent of X volts, L₆ is approximately 60.2 percent of X volts, H₆ is approximately 72 percent of X volts, L₇ is approximately 72.2 percent of X volts, H₇ is approximately 84 percent of X volts, L₈ is approximately 84.2 percent of X volts, and H₈ is approximately 100 percent of X volts;

an encoding circuit coupled to the read circuit to encode the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈, each of the encoded signals representing a unique ordered set of binary bits; and

an error detection and correction circuit coupled to the encoding circuit to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

20. The memory system of claim 19, wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 0.6 volts, L₂ is approximately 0.61 volts, H₂ is approximately 1.2 volts, L₃ is approximately 1.21 volts, H₃ is approximately 1.8 volts, L₄ is approximately 1.81 volts, H₄ is approximately 2.4 volts, L₅ is approximately 2.41 volts, H₅ is approximately 3.0 volts, L₆ is approximately 3.01 volts, H₆ is approximately 3.6 volts, L₇ is approximately 3.61 volts, H₇ is approximately 4.2 volts, L₈ is approximately 4.21 volts, and H₈ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈, represent, respectively, 000, 001, 011, 010, 110, 111, 101, and 100 or 000, 100, 101, 001, 011, 111, 110, and 010;

the memory system comprises an integrated circuit memory system;

each of the cells comprises a multistate flash memory cell;

the read circuit comprises a sense amplifier circuit to convert a current in the cell into the voltage signal;

the encoding circuit comprises;

a plurality of comparator circuits, each comparator circuit coupled between the sense amplifier circuit and a reference voltage to receive the voltage signal and to compare the voltage signal with the reference voltage to generate a reference signal; and

a logic circuit coupled to receive the reference signals and to generate the encoded signal;

the error detection and correction circuit comprises;

an ECC decoder circuit coupled to the logic circuit to receive the encoded signal and other encoded signals, to assert the encoded signal representing data bits, and to generate syndrome bits from the other encoded signals representing ECC check bits;

a syndrome decoder circuit coupled to receive and decode the syndrome bits, to generate correction bits based on the syndrome bits, and to assert a failure signal if the syndrome bits indicate an error in more than one of the data bits represented by the encoded signal; and

a correction circuit coupled to receive the data bits represented by the encoded signal and the correction bits, to replace one of the data bits that is in error based on the correction bits, and to generate corrected bits.

21. A memory system comprising:

an array of memory cells wherein each of the cells has one of 8 states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 8, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 12 percent of X volts, L₂ is approximately 12.2 percent of X volts, H₂ is approximately 24 percent of X volts, L₃ is approximately 24.2 percent of X volts, H₃ is approximately 36 percent of X volts, L₄ is approximately 36.2 percent of X volts, H₄ is approximately 48 percent of X volts, L₅ is approximately 48.2 percent of X volts, H₅ is approximately 60 percent of X volts, L₆ is approximately 60.2 percent of X volts, H₆ is approximately 72 percent of X volts, L₇ is approximately 72.2 percent of X volts, H₇ is approximately 84 percent of X volts, L₈ is approximately 84.2 percent of X volts, and H₈ is approximately 100 percent of X volts;

an encoding circuit coupled to the read circuit to encode the voltage signal into one of a sequence of encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈, each of the encoded signals representing a unique ordered set of binary bits and adjacent ones of the encoded signals being different in only a single bit; and

an error detection and correction circuit coupled to the encoding circuit to detect errors in the encoded signal and to correct correctable errors in the encoded signal.

22. The memory system of claim 21 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 0.6 volts, L₂ is approximately 0.61 volts, H₂ is approximately 1.2 volts, L₃ is approximately 1.21 volts, H₃ is approximately 1.8 volts, L₄ is approximately 1.81 volts, H₄ is approximately 2.4 volts, L₅ is approximately 2.41 volts, H₅ is approximately 3.0 volts, L₆ is approximately 3.01 volts, H₆ is approximately 3.6 volts, L₇ is approximately 3.61 volts, H₇ is approximately 4.2 volts, L₈ is approximately 4.21 volts, and H₈ is approximately 5.0 volts;

the encoded signals E₁, E₂, E₃, E₄, E₅, E₆, E₇, and E₈, represent, respectively, 000, 001, 011, 010, 110, 111, 101, and 100 or 000, 100, 101, 001, 011, 111, 110, and 010;

the memory system comprises an integrated circuit memory system;

each of the cells comprises a multistate flash memory cell;

the read circuit comprises a sense amplifier circuit to convert a current in the cell into the voltage signal;

the encoding circuit comprises;

a plurality of comparator circuits, each comparator circuit coupled between the sense amplifier circuit and a reference voltage to receive the voltage signal and to compare the voltage signal with the reference voltage to generate a reference signal; and

a logic circuit coupled to receive the reference signals and to generate the encoded signal;

the error detection and correction circuit comprises;

an ECC decoder circuit coupled to the logic circuit to receive the encoded signal and other encoded signals, to assert the encoded signal representing data bits, and to generate syndrome bits from the other encoded signals representing ECC check bits;

a syndrome decoder circuit coupled to receive and decode the syndrome bits, to generate correction bits based on the syndrome bits, and to assert a failure signal if the syndrome bits indicate an error in more than one of the data bits represented by the encoded signal; and

a correction circuit coupled to receive the data bits represented by the encoded signal and the correction bits, to replace one of the data bits that is in error based on the correction bits, and to generate corrected bits.

23. A memory system comprising:

an array of memory cells wherein each of the cells has one of 8 states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 8, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 12 percent of X volts, L₂ is approximately 12.2 percent of X volts, H₂ is approximately 24 percent of X volts, L₃ is approximately 24.2 percent of X volts, H₃ is approximately 36 percent of X volts, L₄ is approximately 36.2 percent of X volts, H₄ is approximately 48 percent of X volts, L₅ is approximately 48.2 percent of X volts, H₅ is approximately 60 percent of X volts, L₆ is approximately 60.2 percent of X volts, H₆ is approximately 72 percent of X volts, L₇ is approximately 72.2 percent of X volts, H₇ is approximately 84 percent of X volts, L₈ is approximately 84.2 percent of X volts, and H₈ is approximately 100 percent of X volts;

an encoding circuit coupled to the read circuit to encode the voltage signal into a field of bits; and

an error detection and correction circuit coupled to the encoding circuit to detect errors in the field of bits and to correct correctable errors in the field of bits.

24. The memory system of claim 23 wherein:

the minimum voltage comprises 0 volts and X comprises 5 volts;

L₁ is approximately 0 volts, H₁ is approximately 0.6 volts, L₂ is approximately 0.61 volts, H₂ is approximately 1.2 volts, L₃ is approximately 1.21 volts, H₃ is approximately 1.8 volts, L₄ is approximately 1.81 volts, H₄ is approximately 2.4 volts, L₅ is approximately 2.41 volts, H₅ is approximately 3.0 volts, L₆ is approximately 3.01 volts, H₆ is approximately 3.6 volts, L₇ is approximately 3.61 volts, H₇ is approximately 4.2 volts, L₈ is approximately 4.21 volts, and H₈ is approximately 5.0 volts;

the memory system comprises an integrated circuit memory system;

each of the cells comprises a multistate flash memory cell;

the read circuit comprises a sense amplifier circuit to convert a current in the cell into the voltage signal;

the encoding circuit comprises;

a plurality of comparator circuits, each comparator circuit coupled between the sense amplifier circuit and a reference voltage to receive the voltage signal and to compare the voltage signal with the reference voltage to generate a reference signal; and

a logic circuit coupled to receive the reference signals and to generate the field of bits;

the error detection and correction circuit comprises;

an ECC decoder circuit coupled to the logic circuit to receive the field of bits and other fields of bits, to assert bits from the field of bits representing data bits, and to generate syndrome bits from bits from the other fields of bits representing ECC check bits;

a syndrome decoder circuit coupled to receive and decode the syndrome bits, to generate correction bits based on the syndrome bits, and to assert a failure signal if the syndrome bits indicate an error in more than one of the bits from the field of bits representing data bits; and

a correction circuit coupled to receive the bits representing data bits and the correction bits, to replace a bit that is in error based on the correction bits, and to generate corrected bits.

25. A memory device comprising:

an array of memory cells wherein each of the cells has one of a plurality of states;

a read circuit coupled to the array to read one of the cells and to generate a voltage signal indicative of the state of the cell, the voltage signal being in one of a sequence of voltage subranges L_i<

H_i in a voltage range of X volts defined from a minimum voltage, wherein i is an integer from 1 through 4, and wherein L₁ is approximately 0 percent of X volts, H₁ is approximately 24 percent of X volts, L₂ is approximately 25 percent of X volts, H₂ is approximately 49 percent of X volts, L₃ is approximately 50 percent of X volts, H₃ is approximately 74 percent of X volts, L₄ is approximately 75 percent of X volts, and H₄ is approximately 100 percent of X volts;

means for encoding the voltage signal into a field of bits representing the state of the cell; and

means for detecting and correcting a single erroneous bit in the field of bits and for asserting a failure signal upon detecting more than one erroneous bit in the field of bits.