Hermetically-sealed inductively-coupled plasma source structure and method of use
First Claim
1. A hermetically-sealed inductively-coupled plasma (ICP) source structure, comprising.a dielectric housing an inductively-coupled source antenna integral to said dielectric housing;
- a source support plate contacting said dielectric housing; and
a hermetically-sealed junction formed between said dielectric housing; and
said source support plate, wherein said hermetically sealed junction is formed by thermal bonding process and wherein said hermetically sealed junction is formed over entire area of said source plate.
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Accused Products
Abstract
A multi-zone high-density inductively-coupled plasma source includes a first individually controlled RF antenna segment for producing a plasma from a process gas. A second individually controlled coil segment is included in the ICP source for producing a plasma from a process gas. In various embodiments, more than two sets of individually controlled coil segments may be used. In one embodiment, a separate power supply may be used for each coil segment individually.
Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base pressure of the plasma system.
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Citations
47 Claims
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1. A hermetically-sealed inductively-coupled plasma (ICP) source structure, comprising.
a dielectric housing an inductively-coupled source antenna integral to said dielectric housing; -
a source support plate contacting said dielectric housing; and
a hermetically-sealed junction formed between said dielectric housing; and
said source support plate, wherein said hermetically sealed junction is formed by thermal bonding process and wherein said hermetically sealed junction is formed over entire area of said source plate.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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33. A hermetically-sealed multi-zone inductively-coupled plasma source, for producing a plasma medium comprising:
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a first antenna structure for substantially inductive coupling of radio-frequency electrical power to said plasma medium;
at least one additional antenna structure for inductive coupling of additional radio-frequency electrical power to said plasma medium, wherein said first antenna structure and said at least one additional antenna structure are operated together for providing a substantially uniform plasma process on at least one substrate placed in a low-pressure plasma processing equipment;
a plurality of radio-frequency power supplies operable to supply power to said antenna structures;
a controller operable to control the plurality of radio frequency power supplies in order to provide a substantially uniform plasma process;
a dielectric housing, integrally including the inductively-coupled source antenna, said dielectric housing further comprising;
a lower dielectric plate; and
an upper dielectric plate, wherein said upper dielectric plate couples to said lower dielectric plates such that said inductively-coupled source antenna is held between the lower dielectric plate and the upper dielectric plate, and further wherein said lower dielectric plate couples to said upper dielectric plates using at least one hermetically-sealed contact junction;
a source support plate contacting said dielectric housing; and
a hermetically-sealed junction formed between said dielectric housing and said source support plate.
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Specification