Magnetic film forming method
First Claim
1. A magnetic film forming method, comprising:
- a step of preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni, a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and a material C formed of an element S of at least one kind of Fe, Co, and Ni;
a target making step of making a target by sintering the powders of the material A, the material B and the material C;
a disposing step of disposing the target in a film forming apparatus so that the target confronts a substrate; and
a film forming step of forming a magnetic film on the substrate.
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Accused Products
Abstract
Disclosed is a magnetic film forming method of forming a magnetic film on a substrate by preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni and a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and making a target by sintering the powders of the material A and the material B or preparing the material A formed of oxide of the element T of at least one kind of Fe, Co, and Ni, the material B formed of oxide of the element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and a material C formed of an element S of at least one kind of Fe, Co, and Ni and making a target by sintering the powders of the material A, the material B and the material C; disposing the target in a film forming apparatus so that the target confronts a substrate; and forming the magnetic film on the substrate.
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Citations
30 Claims
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1. A magnetic film forming method, comprising:
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a step of preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni, a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and a material C formed of an element S of at least one kind of Fe, Co, and Ni;
a target making step of making a target by sintering the powders of the material A, the material B and the material C;
a disposing step of disposing the target in a film forming apparatus so that the target confronts a substrate; and
a film forming step of forming a magnetic film on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A magnetic film forming method, comprising:
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a step of preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni and a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements;
a target making step of making a target by sintering the powders of the material A and the material B;
a disposing step of disposing the target in a film forming apparatus so that the target confronts a substrate; and
a film forming step of forming a magnetic film on the substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification