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Method for fabricating high density trench gate type power device

  • US 6,211,018 B1
  • Filed: 12/30/1999
  • Issued: 04/03/2001
  • Est. Priority Date: 08/14/1999
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a trench gate type power device, comprising the steps of:

  • a) forming an insulating layer upon a semiconductor substrate;

    b) using a trench gate mask to pattern said insulating layer;

    c) carrying out an ion implantation by using said insulating layer (thus patterned) as an ion implantation mask, for forming a well;

    d) using said insulating layer as an ion implantation mask to carry out an ion implantation for forming a source;

    e) forming a spacer insulating layer on side walls of said insulating layer;

    f) using said insulating layer and said spacer insulating layer as etch masks to form a trench on said semiconductor substrate and to define a source region;

    g) forming a gate insulating layer on inside walls of said trench;

    h) filling a gate electrode material into said trench, with said gate insulating layer having been formed thereon; and

    i) forming a source electrode electrically contacted to said source region, and forming a drain electrode electrically contacted to a rear face of said semiconductor substrate.

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