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Infrared sensor and infrared sensor array using the same

  • US 6,211,520 B1
  • Filed: 06/14/2000
  • Issued: 04/03/2001
  • Est. Priority Date: 10/19/1998
  • Status: Expired due to Fees
First Claim
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1. An infrared sensor comprising:

  • a first infrared sensing element located on a first dielectric layer that is disposed on a silicon substrate, the first dielectric layer having a void opposite said first infrared sensing element, said first infrared sensing element producing a first output voltage depending on incident infrared rays;

    a MOSFET having a gate receiving the first output voltage, a source, and a drain;

    a second temperature sensing element located on a second dielectric film that is disposed on said silicon substrate, the second temperature sensing element producing a second output voltage received by the source of said MOSFET; and

    a capacitor section connected to the drain of said MOSFET.

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