Infrared sensor and infrared sensor array using the same

• US 6,211,520 B1
• Filed: 06/14/2000
• Issued: 04/03/2001
• Est. Priority Date: 10/19/1998
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ishikawa, Tomohiro, Ueno, Masashi
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US09/593,244
• Time in Patent Office: 293 Days
• Field of Search: 250/338.4, 250/338.1, 250/332
• US Class Current: 250/338.1
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

An infrared sensor includes a first infrared sensing element separated by a dielectric layer from on a silicon substrate and thermally isolated from the substrate by a void in the dielectric layer. The sensor has a second temperature sensing element which detects the temperature of the whole sensor. The output difference between the first and second sensor elements is used as gate/source voltage of a MOSFET. The current variation of the MOSFET is read out as a discharge from a capacitor connected to the MOSFET. The noise in the sensor is suppressed, and performance is improved. An infrared sensor array includes the sensors arranged in an array.

Claims

1. An infrared sensor comprising:

a first infrared sensing element located on a first dielectric layer that is disposed on a silicon substrate, the first dielectric layer having a void opposite said first infrared sensing element, said first infrared sensing element producing a first output voltage depending on incident infrared rays;

a MOSFET having a gate receiving the first output voltage, a source, and a drain;

a second temperature sensing element located on a second dielectric film that is disposed on said silicon substrate, the second temperature sensing element producing a second output voltage received by the source of said MOSFET; and

a capacitor section connected to the drain of said MOSFET.

2. The infrared sensor according to claim 1, wherein said first infrared sensing element comprises a first diode group including a plurality of junction diodes connected with each other and said second temperature sensing element comprises a second diode group including a plurality of junction diodes connected with each other.

3. The infrared sensor according to claim 2, wherein different numbers of diodes are included in said first and second diode groups.

6. An infrared sensor array comprising an at least one-dimensional array of said infrared sensors of claim 1.

7. The infrared sensor according to claim 1, wherein said first and second dielectric layers are a single film.

4. The infrared sensor according to clam 1, wherein said first infrared sensing element comprises a first resistor and said second temperature sensing element comprises a second resistor.

5. The infrared sensor according to claim 4, wherein said first resistor and said second resistor have the same resistance.

8. An infrared sensor comprising:

a first infrared sensing element located on a first dielectric layer that is disposed on a silicon substrate, the first dielectric layer having a void opposite said first infrared sensing element, said first infrared sensing element producing a first output voltage changing in response to incident infrared rays;

a bipolar transistor having a base receiving the first output voltage, an emitter, and a collector;

a second temperature sensing element located on a second dielectric film that is disposed on said silicon substrate, the second temperature sensing element producing a second output voltage connected to the emitter of said bipolar transistor; and

a capacitor section connected to the collector of said bipolar transistor.

9. The infrared sensor according to claim 8, wherein said first infrared sensing element comprises a first diode group including a plurality of junction diodes connected with each other and said second temperature sensing element comprises a second diode group including a plurality of junction diodes connected with each other.

10. The infrared sensor according to claim 8, wherein said first infrared sensing element comprises a first resistor and said second temperature sensing element comprises a second resistor.

11. An infrared sensor array comprising an at least one-dimensional array of said infrared sensors of claim 8.

12. The infrared sensor according to claim 8, wherein said first and second dielectric layers are a single film.

13. An infrared sensor array comprising:

an at least one-dimensional array of first infrared sensing elements, each first infrared sensing element being located on a first dielectric layer that is disposed on a silicon substrate, the first dielectric layer having a void opposite each of said first infrared sensing elements, said first infrared sensing elements being arranged in columns and producing respective first output voltages;

a respective second temperature sensing element producing a second output voltage and a capacitor for each column of said array, located on a second dielectric layer on said silicon substrate; and

respective MOSFETs for each column of said array having gates receiving first output voltages of said first infrared sensing elements of a corresponding column, sources receiving the second output voltages of said second temperature sensing element corresponding to the column, and drains connected to said capacitor corresponding to the column, wherein a voltage of said capacitor, which is discharged by a voltage variation between the gate and the source of said MOSFET of the corresponding column, is output as a read-out signal.