Solid state imager including TFTs with variably doped contact layer system for reducing TFT leakage current and increasing mobility

• US 6,211,533 B1
• Filed: 01/13/1999
• Issued: 04/03/2001
• Est. Priority Date: 05/15/1998
• Status: Expired due to Term

• Current Assignee: InnoLux Corporation
• Original Assignee: OIS Optical Imaging Systems, Inc. (KOCH Industries Incorporated)
• Inventors: Lu, Yiwei, Byun, Young Hee
• Primary Examiner(s): Abraham, Fetsum
• Application Number:
  US09/229,317
• Time in Patent Office: 811 Days
• Field of Search: 257/59-66, 257/347-355, 257/382-385
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458

Abstract

A TFT structure includes a variably doped contact layer system in order to reduce leakage current characteristics and increase mobility of the TFT. Such TFTs may be utilized in, for example, X-ray imagers or liquid crystal displays. In certain embodiments, the contact layer system is lightly doped adjacent a semiconductor or channel layer, and is more heavily doped adjacent the source/drain electrodes. The variation in doping density of the contact layer system may be performed in a step-like manner, gradually, continuously, or in any other suitable manner. In certain embodiments, the contact layer system may include a single layer which is deposited over an intrinsic semiconductor layer, with the amount of dopant gas being used during the deposition process being adjusted through the deposition of the single layer so as to cause the doping density to vary (increase or decrease) throughout the thickness of the system/layer.

Claims

1. A transistor structure comprising:

a substrate;

a gate electrode in communication with a gate address line;

a drain electrode in communication with a drain address line;

a source electrode in communication with a device electrode;

a channel defined between said source and drain electrodes; and

a variably doped contact layer system variably doped throughout its thickness, said variably doped contact layer system being located at least between said drain electrode and a semiconductor layer.

2. The transistor structure of claim 1, wherein said contact layer system directly contacts each of said source electrode, said drain electrode, and said semiconductor layer, and wherein said contact layer system is from about 150-1,200 Å

thick at a portion thereof.

3. The transistor structure of claim 1, wherein said contact layer system has a first doping density adjacent said semiconductor layer and a second doping density adjacent at least one of said source and drain electrodes, and wherein said second doping density includes more dopant than said first doping density so that said contact layer system is more heavily doped adjacent at least one of said source and drain electrodes than adjacent said semiconductor layer.