Voltage tunable schottky diode photoemissive infrared detector

• US 6,211,560 B1
• Filed: 06/16/1995
• Issued: 04/03/2001
• Est. Priority Date: 06/16/1995
• Status: Expired due to Fees

• Current Assignee: United States Air Force
• Original Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Inventors: Jimenez, Jorge R., Pellegrini, Paul W.
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US08/496,849
• Time in Patent Office: 2,118 Days
• Field of Search: 257/451, 257/452, 257/453, 257/454, 257/455
• US Class Current: 257/451
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type

Abstract

PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ratiation. Because of the nature of Schottky diodes, this cut-off wavelength cannot be adjusted during operation, but is relatively fixed, varying only in proportion of the fourth root of an externally applied bias. This disclosure describes a Schottky diode infrared detector with a voltage-tunable cut-off wavelength. The tunability is obtained by modification of the Schottky diode band diagram by insertion of a SiGe layer, with the appropriate parameters, between the silicide and the Si substrate, making the detector a silicide/SiGe/Si Schottky diode detector. The SiGe/Si interface has a valence band offset that can be used to engineer the shape, or depth profile, of the Schottky barrier. The energy offset can be gradual or abrupt, depending on the grading of the Ge concentration in the SiGe layer. When the offset is abrupt, it can be thought of as an additional, higher energy barrier to photoemitted carriers if the SiGe layer is thin enough. Because this offset, gradual or abrupt, is designed to be deeper in the semiconductor than the normal Schottky barrier maximum, it is easily modified by an external applied voltage. The sensitivity and the range of tunability are defined by the SiGe thickness and Ge concentration, respectively.

Claims

1. A Schottky barrier infrared photovoltaic detector which outputs a detection signal which is adjusted by an externally applied voltage and which comprises:

a silicon substrate having a first and second surface;

a silicide layer placed on the first surface of the silicon substrate to form a detector which has a barrier height and which operates in an infrared portion of an electromagnetic spectrum by internal photoemission of holes over an electrical barrier, said detector outputting said detection signal in response to said internal photoemission;

a guard ring implanted in said silicon substrate, said guard ring surrounding the periphery of said silicide layer to block surface currents formed on said substrate and to eliminate edge effects;

a SiGe intermediate layer which is grown on the said first surface of the said silicon substrate before the growth of the silicide layer, said SiGe intermediate layer producing an interface with a valence band offset that serves as additional barrier to photoemitted carriers;

wherein said SiGe intermediate layer has a thickness that is selected from a range of 10 to 800 angstroms; and

first and second contact means for making ohmic contact with said silicide layer and with said silicon substrate respectively, said first and second contact means conducting said externally applied voltage to said detector and outputting said detection signal.

2. A Schottky barrier infrared photovoltaic detector, as defined in claim 1, wherein said SiGe intermediate layer has a Ge concentration selected from a range of 1%-40%.

3. A Schottky barrier infrared photovoltaic detector, as defined in claim 2, wherein said SiGe intermediate layer has a thickness selected from a range of 40-120 angstroms.

4. The Schottky barrier photovoltaic detector of claim 3 wherein said first and second contact means are each formed of aluminum.

5. The Schottky barrier photovoltaic detector of claim 4 wherein said guard ring is formed of n-type dopant material.