Electro-optical device, notably for optical distribution

• US 6,212,319 B1
• Filed: 11/12/1998
• Issued: 04/03/2001
• Est. Priority Date: 11/27/1997
• Status: Expired due to Fees

• Current Assignee: Dassault Electronique
• Original Assignee: Dassault Electronique
• Inventors: Cayrefourcq, Ian
• Primary Examiner(s): Healy, Brian
• Application Number:
  US09/190,707
• Time in Patent Office: 873 Days
• Field of Search: 385/14, 385/15, 385/27, 385/28, 385/29, 385/31, 385/40, 385/41, 385/42, 385/129, 385/130, 385/131, 385/132
• US Class Current: 385/40
• CPC Class Codes: G02F 1/3133 the optical waveguides being made of semiconducting materials

Abstract

A multilayer structure (S,1-3) is surmounted by parallel primary lines (4-1, 4-2) which define, in the regions situated below them, waveguides operating according to a first propagation mode. At least one electro-optical control means (E-1) is placed at a selected location between each pair of primary lines and, under certain conditions, enables the local existence of a second propagation mode affecting the two regions together, so that the transfer of the first mode between the two guides which enclose it can be controlled by acting on the second mode. This makes it possible to produce an energy distributor based on a so-called “cascade” architecture.

Claims

1. Electro-optical device of the type having a structure comprising at least:

one lower confining layer (1) and one upper confining layer (3) placed on either side of a lightwave guiding layer (2),

two at least partially parallel primary lines (4-1,4-2), placed on the upper confining layer (3), opposite the guide layer (2),

the materials and dimensions of these layers and primary lines being chosen so as to define, substantially straight with the primary lines (4-i), two waveguides operating according to a first propagation mode, and

electro-optical control means (E-1) placed at a selected location in order to vary the coupling between the two guides,

characterised in that the electro-optical control means (E-1) are placed between the two primary lines (4-1,4-2) and arranged, on the one hand, to permit locally a second propagation mode affecting both waveguides together and, on the other hand, to control the transfer of the first mode between the two waveguides which enclose it, by acting chiefly on this second mode.

2. Electro-optical device according to claim 1, characterised in that each electro-optical control means comprises an element (E-j) which extends parallel to each of the primary lines (4-i) which enclose it, in a region where they are substantially parallel to one another, over a coupling length (L_c) selected as a function at least of the wavelength of the lightwave and the effective optical indices of the structure in the regions of the waveguides, viewed by the first and second modes of said lightwave, said indices being a function at least of the materials forming said structure and the geometric characteristics of this structure.

3. Electro-optical device according to claim 2, characterised in that the coupling length (L_c) is proportional to the ratio between the wavelength (λ

) of the lightwave and a multiple of the difference between the effective optical indices of the structure in the regions of the waveguides, viewed respectively by the first mode and the second mode of the lightwave.

4. Electro-optical device according to claim 1, wherein the electro-optical control means are adapted to act on the second mode by reducing the effective optical indices of the structure, in the region which extends between said waveguides.

5. Electro-optical device according to claim 4, wherein the reduction in the indices is carried out by injecting electric current into said electro-optical control means.

6. Electro-optical device according to claim 5, wherein in the event that a current intensity threshold is exceeded, the first mode cannot be transferred from one waveguide to the adjacent waveguide, and in the event of zero current intensity, the first mode is transferred substantially integrally from one waveguide to the adjacent waveguide.

7. Electro-optical device according the claim 6, wherein the intensity of the electric monitoring current can only assume the value zero and a value greater than the threshold, so that the device operates as an “

all or nothing”

type switch.

8. Electro-optical device according to claim 2, wherein the element of the electro-optical control means is formed at the selected place at distances from the two primary lines which enclose it chosen so that said element is located closer to the primary line below which the part of the first mode has to be transferred at least partially than to the primary line below which the part of the first mode is at least partially extracted.

9. Electro-optical device according to one of claims 2 to 8, characterised in that the element of the electro-optical control means (E-j) comprises a secondary line extending parallel to each primary line (4-i) which encloses it over the associated coupling length (L_c) and surmounted by a metallised portion (6-j) connected to electrical supply means adapted to control the intensity of the current injected into said element.

10. Electro-optical device according to claim 2, wherein the element of the electro-optical control means comprises a secondary line extending parallel to each primary line which encloses it over the associated coupling length (L_c) and surmounted by a metallised portion connected to electrical supply means adapted to control the intensity of the current injected into said element.

11. Electro-optical device according to claim 10, wherein the primary lines and secondary lines are formed in a material substantially identical to the material which forms the upper confining layer.

12. Electro-optical device according to claim 10, wherein the confining and guide layers and the primary and secondary lines are formed in semiconductor materials.

13. Electro-optical device according to claim 12, wherein the confining layers are made from a binary semiconductor material, particularly of the intrinsic InP type, in that the guide layer is made of a quaternary semiconductor material lattice-matched with said binary material forming the confining layers, particularly of the intrinsic InGaAsP type, and in that the primary lines and secondary lines are formed in binary semiconductor materials, particularly of the p doped InP type.

14. Electro-optical device according to claim 10, wherein the primary lines and secondary lines are produced by a technique chosen from selective vapor or gas phase epitaxy, selective chemical attack and etching.

15. Electro-optical device according to claim 1, wherein the device comprises at least three primary lines separated two by two by at least one electro-optical control means respectively, said electro-optical control means being distributed along the primary lines according to a pattern chosen so that the part of the first mode can be transferred, under control, from one waveguide to the other.

16. Electro-optical device according to claim 1, wherein the first and second modes are of the symmetrical and antisymmetrical types, respectively.