Semiconductor device manufacturing system

• US 6,212,789 B1
• Filed: 08/11/1998
• Issued: 04/10/2001
• Est. Priority Date: 06/19/1998
• Status: Expired due to Fees

• Current Assignee: Canon Sales Co., Inc. (Canon Inc.), Semiconductor Process Laboratory Co., Ltd.
• Original Assignee: Canon Sales Co., Inc. (Canon Inc.), Semiconductor Process Laboratory Co., Ltd.
• Inventors: Kato, Toshio, Azumi, Takayoshi, Tokumasu, Noboru
• Primary Examiner(s): GRAVINI, STEPHEN MICHAEL
• Application Number:
  US09/132,057
• Time in Patent Office: 973 Days
• Field of Search: 34/73, 34/75, 34/76, 34/77, 34/78, 34/80, 118/715, 118/723.CB, 118/723.EB, 134/902
• US Class Current: 34/77
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: H01L 21/67075 for wet etching
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

There is provided a semiconductor device manufacturing system capable of carrying out resist stripping or surface pre-treatment of a substrate by use of a gas such as chlorosulfuric acid with high reactivity The manufacturing system comprises a process vessel 101 formed integrally of a process chamber 1 for treating respective surfaces of substrates 202 with a chemical vapor and a chemical storage chamber 2 for storing chemical for generating the chemical vapor, and a chemical heating means 5 for heating the chemicals stored in the chemical storage chamber 2 to evaporation.

Claims

1. A semiconductor device manufacturing system comprising:

a process vessel containing a process chamber, for the processing of surfaces of substrates by contacting the surfaces with a chemical vapor, and a chemical storage chamber integral with and opening into said process chamber, with an opening between said process chamber and said chemical storage chamber defining a flow path for the chemical vapor from said chemical storage chamber into said process chamber;

opening/closing means, provided between said process chamber and said chemical storage chamber, for movement relative to said opening, between a closed position closing said opening and an open position uncovering said opening and allowing flow of the chemical vapor from said chemical storage chamber into said process chamber; and

chemical heating means for heating chemicals contained in said chemical storage chamber to evaporate the chemicals, thereby generating the chemical vapor.

2. A semiconductor device manufacturing system according to claim 1 wherein said chemical storage chamber is provided immediately below said process chamber.

3. A semiconductor device manufacturing system according to claim 1 further comprising a gas inlet port provided in said process vessel for introducing carrier gas into said process chamber, and an exhaust port provided in said process chamber of said process vessel for discharging the chemical vapor and the carrier gas from said process chamber.

4. A semiconductor device manufacturing system according to claim 3 further comprising a carrier gas pipe connected to said gas inlet port and carrier gas heating means for heating said carrier gas pipe and carrier gas within said carrier gas pipe.

5. A semiconductor device manufacturing system comprising:

a process vessel containing a process chamber, for the processing of surfaces of substrates by contacting the surfaces with a chemical vapor, and a chemical storage chamber integral with and opening into said process chamber, with an opening between said chamber and said chemical storage chamber defining a flow path for the chemical vapor from said chemical storage chamber into said process chamber;

chemical heating means for heating chemicals contained in said chemical storage chamber to evaporate the chemicals, thereby generating the chemical vapor; and

liquid cleaning means for introducing a cleaning liquid into an interior of said process chamber, thereby cleaning the interior of said process chamber.

6. A semiconductor device manufacturing system according to claim 5 wherein said liquid cleaning means comprises at least one spray head mounted within said process chamber.

7. A semiconductor device manufacturing system according to claim 6 wherein said spray head has a planar array of cleaning liquid discharge ports.

8. A semiconductor device manufacturing system according to claim 6, wherein said spray head is rounded and has a plurality of discharge ports for radially discharging the cleaning liquid.

9. A semiconductor device manufacturing system according to claim 5, wherein said liquid cleaning means comprises a cleaning liquid inlet port in said chemical storage chamber, and a cleaning liquid discharge port in said process chamber, whereby the cleaning liquid can be passed from said chemical storage chamber into and through said process chamber.

10. A semiconductor device manufacturing system according to claim 5 wherein said liquid cleaning means comprises a cleaning liquid inlet port in said process chamber, and a cleaning liquid discharge port in said chemical storage chamber, whereby the cleaning liquid can be passed from said process chamber into and through said chemical storage chamber.

11. A semiconductor device manufacturing system comprising:

a process chamber for containing substrates having surfaces to be treated with a process gas containing a chemical vapor;

a chemical storage chamber for storing chemicals and means for generating the chemical vapor; and

process gas discharge means for discharging the process gas containing the generated chemical vapor, said process gas discharge means comprising a gas distributor having a plurality of gas discharging parts arranged in a planar array; and

connecting means for connecting said process gas discharge means to said chemical storage chamber and for supplying the process gas from said chemical storage chamber to said process gas discharge means.

12. A semiconductor device manufacturing system according to claim 11, further comprising an exhaust port which is provided in a bottom surface of said process chamber for exhausting the process gas from said process chamber.

13. A semiconductor device manufacturing system according to claim 11, wherein said connecting mans comprises a process gas pipe and a heating means for heating the process gas carried through said process gas pipe.

14. A semiconductor device manufacturing system according to claim 11, further comprising stirring means, provided in said process chamber, for stirring process gas introduced into said process chamber.

15. A semiconductor device manufacturing system according to claim 11, further comprising, stored within said chemical storage chamber, chemicals for generating the chemical vapor, said chemicals including sulfuric acid, hydrochloric acid, or chlorosulfuric acid.

16. A semiconductor device manufacturing system comprising:

a process vessel containing a process chamber for holding substrates with surfaces to be processed by contact with a chemical vapor, a chemical storage chamber integral with and located vertically beneath said process chamber, and a central opening in a bottom wall of said process chamber, said central opening defining a top portion of said chemical storage chamber and a vertical flow path extending vertically from chemicals stored within said chemical storage chamber to the substrates held within said process chamber;

chemical heating means for heating chemicals contained within said chemical storage chamber to thereby generate the chemical vapor, whereby the generated chemical vapor rises vertically through said central opening and vertically into contact from beneath with substrates held within said process chamber; and

opening/closing means, provided between said process chamber and said chemical storage chamber, for movement relative to said central opening, between a closed position closing said central opening and an open position uncovering said central opening and allowing flow of the chemical vapor from said chemical storage chamber into said process chamber.

17. A semiconductor device manufacturing system according to claim 16 wherein said process chamber has a diameter larger than that of said chemical storage chamber and wherein said opening is coextensive with the diameter of said chemical storage chamber.