Enhanced plasma mode and computer system for plasma immersion ion implantation

• US 6,213,050 B1
• Filed: 12/01/1998
• Issued: 04/10/2001
• Est. Priority Date: 12/01/1998
• Status: Expired due to Term

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Liu, Wei, Bryan, Michael A., Roth, Ian S.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/201,933
• Time in Patent Office: 861 Days
• Field of Search: 156/345, 118/723.I, 118/723.IR, 204/298.37, 216/68, 438/732, 250/492.21, 315/111.41, 315/111.51, 315/111.71
• US Class Current: 118/723.0IR
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32431 Constructional details of the reactor

Abstract

A novel plasma treatment system (200) including one or more novel computer codes. These codes provide a high density plasma for plasma immersion ion implantation applications.

Claims

1. A plasma treatment system comprising a memory, said memory comprising:

a first code directed to forming an rf plasma discharge in a vacuum chamber, said plasma discharge including an inductive coupling structure, said inductive coupling structure comprising a first cusp region at a first end of said structure and a second cusp region at a second end of said structure;

wherein said first cusp region is provided by a first electromagnetic source and said second cusp region is provided by a second-electro magnetic source; and

wherein said first electromagnetic source and said second electromagnetic source confining a substantial portion of said rf plasma discharge to a region away from a wall of said vacuum chamber.

2. The system of claim 1 wherein said rf plasma discharge is provided by a single coil disposed overlying an upper surface of said vacuum chamber.

3. The system of claim 1 wherein said rf plasma discharge is provided by a plurality of coils, each of said coils being disposed overlying an upper surface of said vacuum chamber.

4. The system of claim 2 further comprising a code directed to initiating a tuning circuit coupled to said single coil.

5. The system of claim 1 wherein said first cusp is toward said a rf plasma source.

6. The system of claim 1 wherein said second cusp region is toward said susceptor.

7. The system of claim 1 further comprising a code directed to applying a voltage bias between said rf plasma discharge and a work piece to introduce particles in said rf plasma discharge into a surface of said work piece.

8. The system of claim 1 further comprising a code directed to providing a direct current from a direct current power supply to said first electromagnetic source.

9. The system of claim 8 further comprising a code directed to providing a direct current from a direct current power supply to said second electromagnetic source.

10. The system of claim 9 wherein said first electro-magnetic source is coupled to said direct current power supply to supply current that flows in a first direction.

11. The system of claim 10 wherein said second electro-magnetic source is coupled to said direct current power supply to supply current that flows in a second direction, said second direction being opposite of said first direction.

12. The system of claim 1 further comprising a code directed to feeding hydrogen gas into said vacuum chamber to form said rf plasma discharge comprising hydrogen bearing particles.

13. The system of claim 1 wherein said rf plasma discharge is a hydrogen bearing plasma.

14. The system of claim 1 wherein said rf plasma discharge is substantially a hydrogen bearing plasma of H₁+ particles.

15. The system of claim 11 further comprising a code directed to accelerating particles from said rf plasma discharge into and through a surface of a work piece to a selected depth underlying saiid surface of said work piece.