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Capacitor for integrated circuit and its fabrication method

  • US 6,214,660 B1
  • Filed: 10/23/1998
  • Issued: 04/10/2001
  • Est. Priority Date: 12/28/1994
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a capacitor for an integrated circuit comprising the steps of:

  • forming an adhesion layer of a metal over a substrate;

    implanting non-metal ions into a surface region of said adhesion layer;

    forming a diffusion barrier layer of a compound of said metal and non-metal such that said diffusion barrier layer is positioned on said adhesion layer by annealing said adhesion layer after said ion implantation of said non-metal into said surface region of said adhesion layer so as to change said metal in said surface region to said compound;

    forming a bottom electrode layer of a noble metal on said diffusion barrier layer;

    forming a dielectric layer of a metal oxide on said bottom electrode layer;

    forming a top electrode layer of a conductive metal on said dielectric layer;

    etching said top electrode layer and dielectric layer selectively;

    etching said bottom electrode layer selectively; and

    etching said diffusion barrier layer and adhesion layer selectively.

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