Method to increase wafer utility by implementing deep trench in scribe line
First Claim
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1. A method of making a plurality of individual integrated circuit chips from a semiconductor wafer, said wafer having a major surface, said method comprising the steps of:
- depositing a protective layer on the surface of said wafer;
exposing pre-selected portions of said protective layer forming windows which expose said wafer in the regions to be scribed, wherein said exposing creates a pattern of scribe lines over the surface of said wafer, said scribe lines having line width in the x and the y direction of between 7.5 and 12.5 um, whereby said pre-selected portions are aligned with an alignment mark pattern;
etching said exposed pre-selected portions of the surface of said wafer;
removing said protective layer; and
stressing said wafer until said wafer breaks along said pre-selected areas.
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Abstract
A method that teaches the formation of deep trenches within the surface of a semiconductor wafer, these deep trenches are used to separate the wafer into individual chips by applying stress to the wafer. The formation of the deep trenches uses exposing a thick layer of photoresist followed by etching. The etching is a two step etch, a stabilization etch and a main etch. The stress used to separate the wafer into individual chips can be invoked by applying physical force to the wafer.
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Citations
13 Claims
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1. A method of making a plurality of individual integrated circuit chips from a semiconductor wafer, said wafer having a major surface, said method comprising the steps of:
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depositing a protective layer on the surface of said wafer;
exposing pre-selected portions of said protective layer forming windows which expose said wafer in the regions to be scribed, wherein said exposing creates a pattern of scribe lines over the surface of said wafer, said scribe lines having line width in the x and the y direction of between 7.5 and 12.5 um, whereby said pre-selected portions are aligned with an alignment mark pattern;
etching said exposed pre-selected portions of the surface of said wafer;
removing said protective layer; and
stressing said wafer until said wafer breaks along said pre-selected areas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of making a plurality of individual integrated circuit chips from a semiconductor wafer, said wafer having a major surface, said method comprising the steps of:
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depositing a protective layer on the surface of said wafer;
exposing pre-selected portions of said protective layer forming a pattern of scribe lines over the surface of said wafer said scribe lines having a line width in the X and the Y direction of between 7.5 and 12.5 um whereby said pre-selected portions are aligned with an alignment mark pattern;
etching said exposed pre-selected portions whereby said etching consists of a stabilization etch followed by a main etch said stabilization etch having etching parameters of between 700 and 800 milli Torr chamber pressure, 0 Watt RF power applied, with an etchant gas mixture of between 70 and 90 SCCM of CF4 together with between 11 and 15 SCCM of O2 together with between 5 and 7 Torr of B—
He said first etch being applied for a time between 25 and 35 seconds whereby said main etch having etching parameters of between 700 and 800 milli Torr chamber pressure, between 240 and 310 Watt RF power applied, with an etchant gas mixture of between 70 and 90 SCCM of CF4 together with between 11 and 15 SCCM of O2 together with between 5 and 7 Torr of B—
He said second etch being applied for a time between 1000 and 1400 seconds;
removing said protective layer; and
stressing said wafer until said wafer breaks along said pre-selected areas. - View Dependent Claims (12, 13)
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Specification