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Thin film transistors

  • US 6,215,130 B1
  • Filed: 08/20/1998
  • Issued: 04/10/2001
  • Est. Priority Date: 08/20/1998
  • Status: Expired due to Term
First Claim
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1. An integrated circuit (IC) device comprising:

  • a. a planar substrate (11) with the top surface thereof comprising a continuous co-planar layer of insulating material, b. a conductive interconnection circuit (22) on the substrate, c. an interlevel insulating layer (23) covering the conductive interconnection circuit, d. a plurality of field effect transistor gates (25) formed on the interlevel insulating layer, e. a gate insulating layer (26) formed over the plurality of field effect transistor gates, f. a plurality of source and drain electrodes (29,30) formed on the gate insulting layer, g. a semiconductor layer (31) formed between the source and drain electrodes, wherein the semiconductor layer is a polymer thin film, and h. means comprising conductive vias (20a) extending through the interlevel insulating layer for interconnecting one or more of the plurality of field effect transistor gates and the plurality of source and drain electrodes to the conductive interconnection circuit.

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