Reference voltage generating circuit with MOS transistors having a floating gate

• US 6,215,352 B1
• Filed: 01/25/1999
• Issued: 04/10/2001
• Est. Priority Date: 01/28/1998
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Sudo, Naoaki
• Primary Examiner(s): KIM, JUNG H
• Application Number:
  US09/236,331
• Time in Patent Office: 806 Days
• Field of Search: 327/530, 327/539, 327/540, 323/313, 323/315, 365/185.01, 365/185.09, 365/185.18, 365/185.24, 365/185.29
• US Class Current: 327/530
• CPC Class Codes: G05F 3/242 with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Abstract

A reference voltage generating circuit with MOS transistors having a floating gate is disclosed. The reference voltage generating circuit has first and second MOS transistors in which substantially the same current flows by means of a current mirror circuit. The differential voltage between the threshold voltages of the first and second MOS transistors is applied from the source of the first transistor as the reference voltage. The first and second transistors are of a construction that includes a floating gate, and the threshold voltage can be set to any value by means of the amount of charge injected to the floating gate.

Claims

1. A reference voltage generating circuit comprising:

a first MOS transistor having a floating gate and the gate and drain connected together, for producing source voltage as a reference voltage;

a second MOS transistor having its gate and drain connected together and having a threshold voltage differing from that of said first MOS transistor; and

a current mirror circuit connected to both of said first and second MOS transistors, wherein

a current of substantially the same level flows in said first and second MOS transistors.

2. A reference voltage generating circuit according to claim 1 further comprising means for controlling the amount of charge to be injected to the floating gate of said first MOS transistor to alter the setting of threshold voltage.

3. A reference voltage generating circuit according to claim 2 wherein said means for controlling the amount of charge comprises:

a plurality of voltage generating means for applying prescribed voltages to the gate, drain, and source of said first MOS transistor, when injecting charge to said floating gate, when eliminating charge from said floating gate, and when verifying threshold voltage, respectively;

threshold voltage setting control means for instructing each of said voltage generating means to inject charge to said floating gate, eliminate charge from said floating gate, and verify threshold voltage;

a first switch for switching the connection states between said first MOS transistor and said current mirror circuit; and

a second switch for switching the connection states between the gate and drain of said first MOS transistor.

4. A reference voltage generating circuit comprising:

a first MOS transistor having its gate and drain connected together, for producing source voltage as a reference voltage;

a second MOS transistor having a floating gate and the gate and drain connected together and having a threshold voltage differing from that of said first MOS transistor; and

a current mirror circuit connected to both of said first and second MOS transistors, wherein

a current of substantially the same level flows in said first and second MOS transistors.

5. A reference voltage generating circuit according to claim 4 further comprising means for controlling the amount of charge to be injected to the floating gate of said second MOS transistor to alter the setting of threshold voltage.

6. A reference voltage generating circuit according to claim 5 wherein said means for controlling the amount of charge comprises:

a plurality of voltage generating means for applying prescribed voltages to the gate, drain, and source of said second MOS transistor, when injecting charge to said floating gate, when eliminating charge from said floating gate, and when verifying threshold voltage, respectively;

threshold voltage setting control means for instructing each of said voltage generating means to inject charge to said floating gate, eliminate charge from said floating gate, and verify threshold voltage;

a first switch for switching the connection states between said second MOS transistor and said current mirror circuit; and

a second switch for switching the connection states between the gate and drain of said second MOS transistor.

7. A reference voltage generating circuit comprising:

a first MOS transistor having a floating gate and the gate and drain connected together, for producing source voltage as a reference voltage;

a second MOS transistor having a floating gate and the gate and drain connected together and having a threshold voltage differing from that of said first MOS transistor; and

a current mirror circuit connected to both of said first and second MOS transistors, wherein

a current of substantially the same level flows in said first and second MOS transistors.

8. A reference voltage generating circuit according to claim 7 further comprising means for controlling the amount of charge to be injected to the floating gate of said first and second MOS transistors to alter the setting of threshold voltage.

9. A reference voltage generating circuit according to claim 8 wherein said means for controlling the amount of charge comprises:

a plurality of voltage generating means for applying prescribed voltages to the gate, drain, and source of said first and second MOS transistor, when injecting charge to said floating gate, when eliminating charge from said floating gate, and when verifying threshold voltage, respectively;

threshold voltage setting control means for instructing each of said voltage generating means to inject charge to said floating gate, eliminate charge from said floating gate, and verify threshold voltage;

a first switch for switching the connection states between said first and second MOS transistors and said current mirror circuit;

a second switch for switching the connection states between the gate and drain of said first MOS transistor; and

a third switch for switching the connection states between the gate and drain of said second MOS transistor.

10. A reference voltage generating circuit comprising:

a first MOS transistor having a floating gate and the gate and drain connected together, for producing the source voltage as a reference voltage;

a first constant-current source provided between said first MOS transistor and the ground for generating current of a predetermined fixed current value;

a second MOS transistor having its gate and drain connected together, and its source connected to the ground, and having a threshold voltage differing from that of said first MOS transistor; and

a second constant-current source for generating current of substantially twice the current value of the current generated by said first constant-current source and having one terminal connected in common to the drains of said first and said second MOS transistors and the other terminal connected to a power supply voltage.

11. A reference voltage generating circuit according to claim 10 further comprising means for controlling the amount of charge to be injected to the floating gate of said first MOS transistor to alter the setting of threshold voltage.

12. A reference voltage generating circuit according to claim 11 wherein said means for controlling the amount of charge comprises:

a plurality of voltage generating means for applying prescribed voltages to the gate, drain, and source of said first MOS transistor, when injecting charge to said floating gate, when eliminating charge from said floating gate, and when verifying threshold voltage, respectively;

threshold voltage setting control means for instructing each of said voltage generating means to inject charge to said floating gate, eliminate charge from said floating gate, and verify threshold voltage;

a first switch for switching the connection states between said first MOS transistor and said second constant-current source; and

a second switch for switching the connection states between the gate and drain of said first MOS transistor.

13. A reference voltage generating circuit comprising:

a first MOS transistor having its gate and drain connected together, for producing the source voltage as a reference voltage;

a first constant-current source provided between said first MOS transistor and the ground for generating current of a predetermined fixed current value;

a second MOS transistor having a floating gate and the gate and drain connected together, and its source connected to the ground, and having a threshold voltage differing from that of said first MOS transistor; and

a second constant-current source for generating current of substantially twice the current value of the current generated by said first constant-current source and having one terminal connected in common to the drains of said first and said second MOS transistors and the other terminal connected to a power supply voltage.

14. A reference voltage generating circuit according to claim 13 further comprising means for controlling the amount of charge to be injected to the floating gate of said second MOS transistor to alter the setting of threshold voltage.

15. A reference voltage generating circuit according to claim 14 wherein said means for controlling the amount of charge comprises:

a plurality of voltage generating means for applying prescribed voltages to the gate, drain, and source of said second MOS transistor, when injecting charge to said floating gate, when eliminating charge from said floating gate, and when verifying threshold voltage, respectively;

threshold voltage setting control means for instructing each of said voltage generating means to inject charge to said floating gate, eliminate charge from said floating gate, and verify threshold voltage;

a first switch for switching the connection states between said second MOS transistor and said second constant-current source; and

a second switch for switching the connection states between the gate and drain of said second MOS transistor.

16. A reference voltage generating circuit comprising:

a first MOS transistor having a floating gate and the gate and drain connected together, for producing the source voltage as a reference voltage;

a first constant-current source provided between said first MOS transistor and the ground for generating current of a predetermined fixed current value;

a second MOS transistor having a floating gate and the gate and drain connected together, and its source connected to the ground, and having a threshold voltage differing from that of said first MOS transistor; and

a second constant-current source for generating current of substantially twice the current value of the current generated by said first constant-current source and having one terminal connected in common to the drains of said first and said second MOS transistors and the other terminal connected to a power supply voltage.

17. A reference voltage generating circuit according to claim 16 further comprising means for controlling the amount of charge to be injected to the floating gate of said first and second MOS transistor to alter the setting of threshold voltage.

18. A reference voltage generating circuit according to claim 17 wherein said means for controlling the amount of charge comprises:

a plurality of voltage generating means for applying prescribed voltages to the gate, drain, and source of said first and second MOS transistor, when injecting charge to said floating gate, when eliminating charge from said floating gate, and when verifying threshold voltage, respectively;

threshold voltage setting control means for instructing each of said voltage generating means to inject charge to said floating gate, eliminate charge from said floating gate, and verify threshold voltage;

a first switch for switching the connection states between said first and second MOS transistor and said second constant-current source;

a second switch for switching the connection states between the gate and drain of said first MOS transistor; and

a third switch for switching the connection states between the gate and drain of said second MOS transistor.