High frequency tunable capacitors

• US 6,215,644 B1
• Filed: 09/09/1999
• Issued: 04/10/2001
• Est. Priority Date: 09/09/1999
• Status: Expired due to Term

• Current Assignee: Memscap Incorporated
• Original Assignee: Viavi Solutions, Inc. (Lumentum Holdings Inc.)
• Inventors: Dhuler, Vijayakumar R.
• Primary Examiner(s): Dinkins, Anthony
• Application Number:
  US09/392,987
• Time in Patent Office: 579 Days
• Field of Search: 361/277, 361/278, 361/280-282, 361/287, 361/290, 361/292, 361/298.2, 361/291
• US Class Current: 361/280
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes

Abstract

A tunable capacitor having low loss and a corresponding high Q is provided. The tunable capacitor includes first and second substrates having first and second capacitor plates disposed, respectively, thereon. The capacitor plates may include a high temperature superconductor material. A MEMS actuator, that is either driven by electrostatic force, heat or both, operably contacts the second substrate so that once the actuator is engaged it responds by displacing the second substrate, thereby varying the capacitance between said first capacitor plate and said second capacitor plate. As such, the capacitance can be controlled based upon the relative spacing between the first and second capacitor plates. The MEMS actuator may either be operably attached to the second substrate or detached, yet supporting, the second substrate.

Claims

1. A tunable capacitor comprising:

a first substrate having a first surface;

a first capacitor plate disposed on the first surface of said first substrate;

a second substrate having a first surface;

a second capacitor plate disposed on the first surface of said second substrate, wherein said first and second substrates are positioned such that said first and second capacitor plates face one another in a spaced apart relationship; and

a microelectromechanical actuator operably contacting said second substrate for displacing said second substrate in response to electrostatic forces, thereby varying the capacitance between said first capacitance plate and said second capacitance plate.

2. The tunable capacitor of claim 1, wherein said first and second capacitor plates further comprise a high temperature superconductor material.

3. The tunable capacitor of claim 2, wherein said first and second capacitor plates further comprise a high temperature superconductor yttrium compound.

4. The tunable capacitor of claim 2, wherein said first and second capacitor plates further comprise a high temperature superconductor thallium compound.

5. The tunable capacitor of claim 1, wherein said microelectromechanical actuator further comprises:

at least one first electrode disposed on the first surface of said first substrate; and

at least one cantilever structure at least partially overlying said first electrode and operably contacting said second substrate, said at least one cantilever structure comprising a second electrode.

6. The tunable capacitor of claim 5, wherein said at least one first electrode further comprises a high temperature superconductor material.

7. The tunable capacitor of claim 5, wherein said second electrode further comprises silicon.

8. The tunable capacitor of claim 5, further comprising a first intermediary layer disposed on the first surface of said first substrate intermediate said cantilever structure and said first substrate.

9. The tunable capacitor of claim 8, wherein said first intermediary layer further comprises gold.

10. The tunable capacitor of claim 5, further comprising a second intermediary layer disposed on the first surface of said second substrate intermediate said cantilever structure and said second substrate, wherein said second intermediary layer operably connects said second substrate to said cantilever structure.

11. The tunable capacitor of claim 10, wherein said first intermediary layer further comprises gold.

12. The tunable capacitor of claim 5, wherein said cantilever structure further comprises spring-like elements structurally patterned in said cantilever structure that provide elasticity for said cantilever structure.

13. The tunable capacitor of claim 5, wherein said cantilever structure further comprises a first layer comprising the second electrode and a second layer disposed on the first layer comprising a biasing element.

14. The tunable capacitor of claim 13, wherein said first layer further comprises silicon and said second layer comprises gold.

15. The tunable capacitor of claim 1, further comprising at least one spring-like structure operably connected to said second substrate, whereby said at least one spring-like structure provides elasticity for said second substrate.

16. The tunable capacitor of claim 1, wherein said first and second substrates further comprise low signal loss substrates.

17. The tunable capacitor of claim 16, wherein said first and second substrates further comprise magnesium oxide (MgO).

18. A tunable capacitor comprising:

a first substrate having a first surface;

a first capacitor plate disposed on the first surface of said first substrate;

a second substrate having a first surface;

a second capacitor plate disposed on the first surface of said second substrate, wherein said first and second substrates are positioned such that said first and second capacitor plates face one another in a spaced apart relationship; and

a microelectromechanical actuator operably contacting said second substrate for displacing said second substrate in response to thermal actuation, thereby varying the capacitance between said first capacitance plate and said second capacitance plate.

19. The tunable capacitor of claim 18, wherein said first and second capacitor plates further comprise a high temperature super conductor material.

20. The tunable capacitor of claim 19, wherein said first and second capacitor plates further comprise a high temperature superconductor yttrium compound.

21. The tunable capacitor of claim 19, wherein said first and second capacitor plates further comprise a high temperature superconductor thallium compound.

22. The tunable capacitor of claim 18, wherein said microelectromechanical actuator further comprises a moveable composite structure having at least two layers, including:

a first layer; and

a second layer disposed on said first layer and operably contacting said second substrate, wherein said first layer responds differently to thermal actuation than said second layer.

23. The tunable capacitor of claim 22, wherein said first layer comprises one or more materials having a lower coefficient of thermal expansion than one or more materials comprising said second layer.

24. The tunable capacitor of claim 22, wherein said first layer comprises silicon.

25. The tunable capacitor of claim 22, wherein said second layer comprises gold.

26. The tunable capacitor of claim 22, further comprising a first intermediary layer disposed on the first surface of said first substrate intermediate said moveable composite structure and said first substrate.

27. The tunable capacitor of claim 26, wherein said first intermediary layer further comprises gold.

28. The tunable capacitor of claim 22, further comprising a second intermediary layer disposed on the first surface of said second substrate intermediate said moveable composite structure and said second substrate wherein said second intermediary layer operably connects said second substrate to said moveable composite structure.

29. The tunable capacitor of claim 28, wherein said first intermediary layer further comprises gold.

30. The tunable capacitor of claim 22, wherein said moveable composite structure further comprises spring-like elements structurally patterned in said second layer so as to provide elasticity for said moveable composite structure.

31. The tunable capacitor of claim 22, further comprising at least one spring-like structure operably connected to said second substrate, whereby said at least one spring-like structure provides elasticity for said second substrate.

32. The tunable capacitor of claim 18, wherein said first and second substrates further comprise a low signal loss substrate.

33. The tunable capacitor of claim 18, wherein said first and second substrates further comprise magnesium oxide (MgO).

34. A tunable capacitor comprising:

a first substrate having a first surface;

a first capacitor plate disposed on the first surface of said first substrate;

a second substrate having a first surface;

a second capacitor plate disposed on the first surface of said second substrate, wherein said first and second substrates are positioned such that said first and second capacitor plates face one another in a spaced apart relationship; and

a microelectromechanical actuator operably contacting said second substrate for displacing said second substrate in response to a motive force selected from the group consisting of electrostatic force and thermal actuation, thereby varying the capacitance between said first capacitance plate and said second capacitance plate.

35. The tunable capacitor of claim 34, wherein said first and second capacitor plates further comprise a high temperature super conductor material.

36. The tunable capacitor of claim 34, wherein said microelectromechanical actuator further comprises:

at least one first electrode disposed on the first surface of said first substrate; and

at least one cantilever structure at least partially overlying said first electrode and operably contacting said second substrate, said at least one cantilever structure comprising at least two layers and a second electrode.

37. The tunable capacitor of claim 36 wherein said cantilever structure further comprises a first layer and a second layer disposed upon said first layer, wherein said first layer responds differently to thermal actuation than said second layer.

38. The tunable capacitor of claim 36 wherein said first layer comprises one or more materials having a lower coefficient of thermal expansion than one or more materials comprising said second layer.