Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing

• US 6,217,658 B1
• Filed: 06/09/1999
• Issued: 04/17/2001
• Est. Priority Date: 06/03/1997
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Murugesh, Laxman, Narwankar, Pravin, Orczyk, Maciek
• Primary Examiner(s): Mills, Gergory
• Assistant Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/328,709
• Time in Patent Office: 678 Days
• Field of Search: 118/715, 118/719, 118/695, 118/696, 118/697, 118/698, 118/710, 118/723.I, 156/345
• US Class Current: 118/697
• CPC Class Codes: C03C 2201/12 containing fluorine C03C2201/14 takes precedence
• CPC Class Codes: C03C 2203/46 fluorine containing
• CPC Class Codes: C03C 3/06 with more than 90% silica by weight, e.g. quartz C03C3/045 takes precedence
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31625 Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG

Abstract

A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 μm with an aspect ratio of up to 4.5:1.

Claims

1. A substrate-processing apparatus for forming a fluorinated silicon glass layer on a substrate, the apparatus comprising:

(a) a processing chamber;

(b) a gas delivery system coupled to said processing chamber;

(c) a plasma system coupled to said processing chamber;

(d) a controller configured to control said gas delivery system and said plasma system; and

(e) a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the substrate processing apparatus, said computer-readable program comprising;

(i) computer instructions that control said gas delivery system and said plasma system to flow a plasma gas into said chamber and to form a plasma at a plasma power therefrom;

(ii) computer instructions that control said gas delivery system to flow a non-halogen-containing source gas into said chamber after said plasma has heated a substrate in said chamber for a first period of time to a temperature of at least about 100°

C. to form a non-halogenated layer;

(iii) computer instructions that control said gas delivery system to flow a halogen-containing gas at a halogen-containing gas flow rate into said chamber within a second period of time, wherein said second period of time is sufficient to form a first portion of a halogen-containing layer on said non-halogenated layer while the temperature of the substrate is at least about 100°

C.; and

(iv) computer instructions that control said gas delivery system and said plasma system to reduce said plasma power and to increase said halogen-containing gas flow rate to form a second portion of the halogen doped layer.

2. The apparatus of claim 1 further comprising a vacuum system coupled to said process chamber.

3. The apparatus of claim 2 wherein said controller is further configured to control said vacuum system.

9. The apparatus of claim 1 wherein said program further comprises a set of computer instructions for cooling the substrate after forming said non-halogenated layer.

4. The apparatus of claim l wherein said plasma system includes at least one source coil, disposed proximate said chamber and at least one source RF generator coupled to said at least one source coil.

5. The apparatus of claim 4 wherein said process chamber includes a dome and said at least one source coil includes a top coil disposed on top of said dome.

6. The apparatus of claim 4 wherein said process chamber includes a dome and said at least one source coil includes a side coil mounted said dome.

7. The apparatus of claim 4 wherein said plasma system further comprises a bias generator coupled to a substrate support.

8. The apparatus of claim 4 wherein said processing chamber is a high density plasma processing chamber.

10. A computer readable storage medium having program code embodied therein, said program code for controlling a substrate processing system having a deposition chamber, said program code controlling the substrate processing system to form a film on a substrate in accordance with the following steps:

(a) heating the substrate in the chamber to a temperature of at least about 100°

C.;

(b) flowing a silicon-containing process gas into the chamber under conditions suitable for depositing silicon glass;

(c) forming a layer of undoped silicon glass on the substrate;

(d) flowing a halogen-containing gas into the chamber at a flow rate, while the temperature of the substrate is at least about 100°

C., to form a first portion of a halogen-containing silicon oxide layer on said layer of undoped silicon glass; and

(e) increasing the flow rate of the halogen-containing gas and lowering the temperature of the substrate to form a second portion of the halogen-containing silicon oxide layer.

11. The computer readable storage medium of claim 10 wherein said step (a) includes heating the substrate with a plasma.

12. The computer readable storage medium of claim 11 wherein said plasma is a high density plasma.