High throughput OMVPE apparatus
First Claim
Patent Images
1. A cold wall reactor, comprising:
- an inner wall surrounding a central cavity which has a closed end and an open end;
an outer wall spaced from and surrounding said inner wall to provide a reactor cell therebetween;
a susceptor rotatably mounted in said cell; and
a heater within said central cavity for heating said susceptor.
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Abstract
A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.
88 Citations
35 Claims
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1. A cold wall reactor, comprising:
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an inner wall surrounding a central cavity which has a closed end and an open end;
an outer wall spaced from and surrounding said inner wall to provide a reactor cell therebetween;
a susceptor rotatably mounted in said cell; and
a heater within said central cavity for heating said susceptor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A gas distribution system for a reactor cell comprising:
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a plurality of gas injectors connected at spaced locations to the reactor cell;
a gas distribution manifold;
a corresponding gas flow controller connected between each of said injectors and said manifold for regulating the flow of gas to the corresponding injectors;
a source of carrier gas;
a carrier gas flow controller connecting said source of carrier gas to said manifold;
at least one source of a reactant gas;
a reactant flow controller connecting said source of reactant gas to said manifold; and
a sensor connected between said distribution manifold and said carrier gas flow for regulating said controller in response to a sensed parameter in the manifold.
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25. A method of controlling gas flow in a reactor, comprising:
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locating material to be treated on an outwardly sloping susceptor movably mounted in an annular elongated reactor cell having inner and outer walls and having an inlet end and an outlet end;
supplying reactant gases to said reactor cell at multiple spaced inlet locations around the annular cell at said inlet end;
drawing said gases out of said reactor cell outlet end at multiple spaced exit locations around the annular cell at said outlet end to cause laminar flow of said gases across said material to be treated;
aligning said multiple spaced exit locations with corresponding multiple spaced inlet locations to produce controlled, axial, nonturbulent gas flow zones around said cell;
controlling the supply of reactant gases to provide equalized laminar flow in said zones;
locating a heat source within said inner wall;
heating said susceptor and said material to be treated; and
moving said material to be treated sequentially through said gas flow zones. - View Dependent Claims (26, 27)
cooling said gases prior to drawing the gases out of said cell.
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27. The method of claim 26, wherein supplying reactant gases includes supplying selective quantities of gases from plural sources of carrier and reactant gases, and independently controlling the flow of said carrier and reactant gases.
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28. A high throughput organometallic vapor phase epitaxy apparatus for vapor deposition of material on substrates, comprising:
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an inner wall surrounding an elongated central cavity which has a closed end and an open end;
an outer wall spaced from and surrounding said inner wall to provide a reactor cell therebetween;
a susceptor movably mounted in said cell and adapted to receive a substrate; and
a heater within said central cavity for heating said susceptor and said substrate. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35)
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Specification