Atmospheric pressure inductive plasma apparatus
First Claim
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1. A method of processing a semiconductor device with a thermal plasma, comprising the steps of:
- providing one or more inductive thermal plasma torches, each including one or more tubes, and a coil surrounding said one or more tubes;
generating a thermal plasma with temperature of greater than 4000°
K. in thermal or quasi-thermal equilibrium from one or more gases that pass through said one or more tubes, said plasma extending from a top surface of said plasma torches; and
contacting the semiconductor device in close proximity to the plasma torch, with the semiconductor device and the plasma torch moving laterally relative to one another, such that the plasma processes the surface of said semiconductor device without damaging the semiconductor device.
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Accused Products
Abstract
An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.
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Citations
7 Claims
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1. A method of processing a semiconductor device with a thermal plasma, comprising the steps of:
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providing one or more inductive thermal plasma torches, each including one or more tubes, and a coil surrounding said one or more tubes;
generating a thermal plasma with temperature of greater than 4000°
K. in thermal or quasi-thermal equilibrium from one or more gases that pass through said one or more tubes, said plasma extending from a top surface of said plasma torches; and
contacting the semiconductor device in close proximity to the plasma torch, with the semiconductor device and the plasma torch moving laterally relative to one another, such that the plasma processes the surface of said semiconductor device without damaging the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification
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Current AssigneePhoenix Solar AG
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Original AssigneeTimedomain CVD, Inc.
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InventorsSelitser, Simon I.
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Primary Examiner(s)PASCHALL, MARK H
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Application NumberUS09/356,066Time in Patent Office638 DaysField of Search219/121.4, 219/121.41, 219/121.43, 219/121.52, 315/111.51, 118/723.MP, 118/723.I, 156/345, 156/643.1, 156/646.1US Class Current219/121.52CPC Class CodesB23K 10/003 Scarfing, desurfacing or de...
